high power infrared led
Abstract: HSDL-4260 875nm
Text: HSDL-4260 High-Power T-1¾ 5mm AlGaAs Infrared (875nm) Lamp Datasheet Description Features The HSDL-4260 High Power Infrared emitter was designed for applications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs)
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HSDL-4260
875nm)
HSDL-4260
875nm.
875nm
5989-4468EN
high power infrared led
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ASDL-4560
Abstract: ASDL-4650-C22 6 C s
Text: ASDL-4560 High Performance Infrared Emitter 875nm ChipLED Data Sheet Description Features ASDL-4560 Infrared emitter is a 0805 ChipLED SMT package that is designed for high radiant intensity, fast switching and low forward voltage applications. It is optimized for efficiency at emission wavelength of
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ASDL-4560
875nm)
ASDL-4560
875nm
AV02-0275EN
ASDL-4650-C22
6 C s
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Infrared Phototransistor
Abstract: SIR383C
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIS-038-004 REV : PAGE : 1.2 1/8 5mm Infrared LED,T-1 3/4 MODEL NO : SIR383C Features : High radiant intensity Peak wavelength p=875nm View angle 20 High reliability Low forward voltage Description :
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DIS-038-004
SIR383C
875nm
SIR383C)
500Pcs/1Bag6
Infrared Phototransistor
SIR383C
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SMD diode f9
Abstract: infrared led IR LED infrared led
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIS-095-063 REV : 1.0 PAGE : 1/8 1.9mm Round Subminiature , ‘‘Yoke’’ Lead Infrared LED MODEL NO : SIR95-21C/F9 Features : Small double-end package Low forward voltage View angle 25 Peak wavelength p=875nm
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DIS-095-063
SIR95-21C/F9
875nm
SIR95-21C/F10
SMD diode f9
infrared led
IR LED infrared led
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infrared counter
Abstract: infrared led
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIS-038-066 REV : PAGE : 1.0 1/8 5mm Infrared LED MODEL NO : SIR383C/H9 Features : High radiant intensity Peak wavelength p=875nm View angle 20 High reliability Low forward voltage Description :
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DIS-038-066
SIR383C/H9
875nm
SIR383C/H9)
500Pcs/1Bag6
infrared counter
infrared led
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PDF
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infrared led
Abstract: infrared led receiver SIR421C
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIS-042-070 REV : PAGE : 1.0 1/8 5mm Infrared LED ,T-1 3/4 MODEL NO : SIR421C Features : High radiant intensity Peak wavelength p=875nm View angle 125 High reliability Low forward voltage Description :
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DIS-042-070
SIR421C
875nm
SIR421C)
infrared led
infrared led receiver
SIR421C
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infrared receiver led 5mm
Abstract: IR LED and photodiode 5mm datasheet LED infrared infrared 5mm infrared led LED 5mm standard SIR333
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIS-033-002 REV : PAGE : 1.2 1/8 5mm Infrared LED MODEL NO : SIR333 Features : High radiant intensity Peak wavelength p=875nm View angle 20 High reliability Low forward voltage Standard T-13/4 5mm package
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DIS-033-002
SIR333
875nm
T-13/4
SIR333)
500Pcs/1Bag6
infrared receiver led 5mm
IR LED and photodiode 5mm
datasheet LED infrared
infrared 5mm
infrared led
LED 5mm standard
SIR333
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet .9mm Round Subminiature “Z-Bend” Lead Infrared LED SIR91-21C/TR7 Features ․Good spectral matching to Si photodetector ․Low forward voltage ․Peak wavelength λp=875nm ․Package in 12mm tape on 7” diameter reel ․Pb free ․The product itself will remain within RoHS compliant version.
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SIR91-21C/TR7
875nm
SIR91-21C/TR7
NoDTS-091-002
date15-Aug-2007
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 1.9mm Round Subminiature “Z-Bend” Lead Infrared LED SIR91-21C/TR10 Features ․Good spectral matching to Si photodetector ․Low forward voltage ․Peak wavelength λp=875nm ․Package in 12mm tape on 7” diameter reel ․Pb free
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SIR91-21C/TR10
875nm
SIR91-21C/TR10
NoSZDTS-091-002
date24-Jul-2007
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PDF
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Infrared LED , T-1 3/4 SIR333-A Features High reliability High radiant intensity Peak wavelength p=875nm 2.54mm Lead spacing Low forward voltage Pb free This product itself will remain within RoHS compliant version. Descriptions EVERLIGHT’S Infrared Emitting Diode SIR333-A
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SIR333-A
875nm
SIR333-A)
DIS-033-082
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Untitled
Abstract: No abstract text available
Text: 5mm Infrared LED ,T-1 SIR323-5 Features ․High reliability ․High radiant intensity ․Peak wavelength λp=875nm ․2.54mm Lead spacing ․Low forward voltage ․Pb Free Description ․EVERLIGHT’s Infrared Emitting Diode SIR323-5 is a high intensity diode , molded in a blue transparent plastic package.
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SIR323-5
875nm
SIR323-5)
DIR-0000993
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Diode Optical Smoke DEtector
Abstract: 4560 8 pin 4560 footprints ASDL-4560 ASDL-4650-C22
Text: ASDL-4560 High Performance Infrared Emitter 875nm ChipLED Data Sheet Description Features ASDL-4560 Infrared emitter is a 0805 ChipLED SMT package that is designed for high radiant intensity, fast switching and low forward voltage applications. It is optimized for efficiency at emission wavelength of
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ASDL-4560
875nm)
ASDL-4560
875nm
AV02-0275EN
Diode Optical Smoke DEtector
4560 8 pin
4560 footprints
ASDL-4650-C22
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SIR333-A
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Infrared LED , T-1 3/4 SIR333-A Features ․High reliability ․High radiant intensity ․Peak wavelength λp=875nm ․2.54mm Lead spacing ․Low forward voltage ․Pb free ․This product itself will remain within RoHS compliant version.
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SIR333-A
875nm
SIR333-A)
DIS-033-082
date07-20-2004
SIR333-A
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photodiode and phototransistor
Abstract: Diode Optical Smoke DEtector SIR67-21C
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIS-672-018 REV : 1.1 PAGE : 1/8 TOP Infrared LED MODEL NO : SIR67-21C Features : Small double-end package Low forward voltage View angle 120 Peak wavelength p=875nm Description : SIR67-21C is an infrared emitting diode in miniature SMD package which is molded
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DIS-672-018
SIR67-21C
875nm
SIR67-21C
photodiode and phototransistor
Diode Optical Smoke DEtector
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet Side Face Infrared LED SIR928-6C-F Features Low forward voltage Peak wavelength p=875nm High reliability Pb free This product itself will remain within RoHS compliant version. Descriptions SIR928-6C-F is a GaAlAs infrared emitting diode. The miniature
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SIR928-6C-F
875nm
SIR928-6C-F
CDIS-092-002
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet .9mm Round Subminiature “Z-Bend” Lead Infrared LED SIR91-21C/TR10 Features ․Good spectral matching to Si photodetector ․Low forward voltage ․Peak wavelength λp=875nm ․Package in 12mm tape on 7” diameter reel ․Pb free ․The product itself will remain within RoHS compliant version.
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SIR91-21C/TR10
875nm
SIR91-21C/TR10
NoDTS-091-002
date15-Aug-2007
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PDF
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet Top Infrared LED SIR67-21C/TR8 Features ․Peak wavelength λp=875nm. ․Low forward voltage. ․Compatible with infrared and vapor phase reflow solder process. ․Package in 8mm tape on 7” diameter reels. ․Pb free ․The product itself will remain within RoHS compliant version.
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SIR67-21C/TR8
875nm.
SIR67-21C/TR8
DTS-067-180
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 1.9mm Round Subminiature “Yoke” Lead LED SIR91-21C/TR9 Features ․Good spectral matching to Si photodetector ․Low forward voltage ․Peak wavelength λp=875nm ․Package in 12mm tape on 7” diameter reel ․Pb free ․The product itself will remain within RoHS compliant version.
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SIR91-21C/TR9
875nm
SIR91-21C/TR9
NoSZDTS-091-003
date24-Jul-2008
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PDF
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 1.9mm Round Subminiature “Yoke” Lead Infrared LED SIR95-21C/TR9 Features ․Good spectral matching to Si photodetector ․Low forward voltage ․Peak wavelength λp=875nm ․Package in 12mm tape on 7” diameter reel ․Pb free ․The product itself will remain within RoHS compliant version.
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SIR95-21C/TR9
875nm
SIR95-21C/TR9
NoDIR-0000097
date02-18-2009
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PDF
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Untitled
Abstract: No abstract text available
Text: 3mm Infrared LED ,T-1 SIR234 Features ․High reliability ․High radiant intensity ․Peak wavelength λp=875nm ․2.54mm Lead spacing ․Low forward voltage ․Pb Free Description ․EVERLIGHT’s Infrared Emitting Diode SIR234 is a high intensity diode , molded in a blue transparent plastic package.
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SIR234
875nm
SIR234)
DIR-0000974
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875nm
Abstract: No abstract text available
Text: Technical Data Sheet 3mm Infrared LED , T-1 SIR204C/H28 Features ˙High reliability ˙High radiant intensity ˙Peak wavelength λp=875nm ˙2.54mm Lead spacing ˙Low forward voltage Descriptions ˙EVERLIGHT’S Infrared Emitting Diode SIR204C/H28 is a high intensity diode , molded in a water clear plastic
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SIR204C/H28
875nm
SIR204C/H28)
NoDIS-020-089
date01-16-200y
date01-16-2003
875nm
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IR LED 810 nm
Abstract: No abstract text available
Text: Technical Data Sheet 1206 Package Infrared LED With Inner Lens SIR11-21C/L9/TR8 Features ˙High reliability ˙Small double-end package ˙Peak wavelength λp=875nm ˙Package in 8mm tape on 7” diameter reel ˙Low forward voltage Descriptions ˙SIR11-21C/L9/TR8 is an infrared emitting diode in
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SIR11-21C/L9/TR8
875nm
SIR11-21C/L9/TR8
NoDTS-011-114
date03-07-2003
IR LED 810 nm
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infrared counter
Abstract: infrared led infrared led receiver SIR323-5
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIS-032-016 REV : PAGE : 1.1 1/8 5mm Infrared LED MODEL NO : SIR323-5 Features : High radiant intensity Peak wavelength p=875nm View angle 35 High reliability Low forward voltage Description :
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DIS-032-016
SIR323-5
875nm
SIR323-5)
500Pcs/1Bag6
infrared counter
infrared led
infrared led receiver
SIR323-5
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PDF
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875NM
Abstract: HSDL-4260
Text: HSDL-4260 High-Power T-1¾ 5mm AlGaAs Infrared (875nm) Lamp Datasheet Description Features The HSDL-4260 High Power Infrared emitter was designed for applications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs)
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HSDL-4260
875nm)
HSDL-4260
875nm.
875nm
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