Untitled
Abstract: No abstract text available
Text: Product Group: Vishay Semiconductors / Diodes / May 2015 /FF-DD-003-2015 From: Henry Chi, Product Marketing Sr. Manager Tel: +886 2 2911 3861 ext. 6533 office E-mail: henry.chi@vishay.com Subject: Information Notice – Product Marking DESCRIPTION OF CHANGE: Addition of cathode band on SMPCxxA series Transzorb TVS devices
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Original
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/FF-DD-003-2015
SMPC10A-M3/86A
A-M3/86A
SMPC20A-M3/86A
A-M3/87A
SMPC11A-M3/86A
SMPC20A-t
NY11788
D-74072
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PDF
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to-277A
Abstract: JESD22-B102 J-STD-002 SS5P6
Text: New Product SS5P5 & SS5P6 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement • Low forward voltage drop, low power
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Original
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J-STD-020,
O-277A
2002/95/EC
2002/96/EC
to-277A
JESD22-B102
J-STD-002
SS5P6
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PDF
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JESD22-B102
Abstract: J-STD-002
Text: New Product SS3P5L & SS3P6L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement • Low forward voltage drop, low power
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Original
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J-STD-020,
O-277A
2002/95/EC
2002/96/EC
JESD22-B102
J-STD-002
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PDF
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TO-277A
Abstract: SS3P4L JESD22-B102 J-STD-002 Marking Code s33 MARKING CODE 87A marking code s34 eas code 86A marking TO277A
Text: New Product SS3P3L & SS3P4L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power
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Original
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J-STD-020,
2002/95/EC
2002/96/EC
O-277A
TO-277A
SS3P4L
JESD22-B102
J-STD-002
Marking Code s33
MARKING CODE 87A
marking code s34
eas code
86A marking
TO277A
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PDF
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TO-277A
Abstract: MARKING CODE 87A JESD22-B102 SS10P6 TO-277A weight J-STD-002 S105 marking 86A ss10p6hm3 86A marking
Text: New Product SS10P5 & SS10P6 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection
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Original
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SS10P5
SS10P6
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
TO-277A
MARKING CODE 87A
JESD22-B102
SS10P6
TO-277A weight
J-STD-002
S105
marking 86A
ss10p6hm3
86A marking
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SS8P2L & SS8P3L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power
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Original
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J-STD-020,
2002/95/EC
2002/96/EC
O-277A
08-Apr-05
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PDF
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SS10PH45
Abstract: No abstract text available
Text: New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C
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Original
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SS10PH45
O-277A
J-STD-020,
2002/95/EC
2002/96/EC
08-Apr-05
SS10PH45
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PDF
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diode marking s86c
Abstract: TO-277A to277a S86C ss8p6c-m3 "Schottky Diode" SMPC SS8P5C marking 86A JESD22-B102 J-STD-002
Text: New Product SS8P5C & SS8P6C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power
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Original
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J-STD-020,
2002/95/EC
2002/96/EC
O-277A
diode marking s86c
TO-277A
to277a
S86C
ss8p6c-m3
"Schottky Diode" SMPC
SS8P5C
marking 86A
JESD22-B102
J-STD-002
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PDF
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ss10p4hm3
Abstract: SS10P3 SS10P4 ss10p4-m3 JESD22-B102 J-STD-002 S103 TO-277A ss10p4-e3 ss10p4he3
Text: New Product SS10P3 & SS10P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • Low forward voltage drop, low power
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Original
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SS10P3
SS10P4
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
ss10p4hm3
SS10P3
SS10P4
ss10p4-m3
JESD22-B102
J-STD-002
S103
TO-277A
ss10p4-e3
ss10p4he3
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PDF
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V8P10
Abstract: No abstract text available
Text: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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Original
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V8P10
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
18-Jul-08
V8P10
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product S4PB thru S4PM Vishay General Semiconductor High Current Density Surface Mount Glass Passivated Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Glass passivated chip junction
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Original
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J-STD-020,
2002/95/EC
2002/96/EC
O-277A
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product V12P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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Original
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V12P10
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SS8P5C & SS8P6C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement • Low forward voltage drop, low power
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Original
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J-STD-020,
2002/95/EC
2002/96/EC
O-277A
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product S4PB thru S4PM Vishay General Semiconductor High Current Density Surface Mount Glass Passivated Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Glass passivated chip junction
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Original
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J-STD-020,
2002/95/EC
2002/96/EC
O-277A
08-Apr-05
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PDF
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JESD22-B102
Abstract: J-STD-002 S105 SS10P6
Text: New Product SS10P5 & SS10P6 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection
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Original
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SS10P5
SS10P6
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
18-Jul-08
JESD22-B102
J-STD-002
S105
SS10P6
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PDF
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TP 0720
Abstract: No abstract text available
Text: New Product SS8PH9 & SS8PH10 Vishay General Semiconductor High Current Density Surface Mount High-Voltage Schottky Rectifier eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Guardring for overvoltage protection
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Original
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SS8PH10
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
08-Apr-05
TP 0720
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PDF
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V10P10
Abstract: No abstract text available
Text: New Product V10P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES TMBS eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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Original
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V10P10
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
O-277As
08-Apr-05
V10P10
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PDF
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S3330
Abstract: No abstract text available
Text: New Product SS3P3L & SS3P4L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power
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Original
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J-STD-020,
2002/95/EC
2002/96/EC
O-277A
08-Apr-05
S3330
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SS10P3 & SS10P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement K • Guardring for overvoltage protection
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Original
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SS10P3
SS10P4
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SS3P5L & SS3P6L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power
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Original
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J-STD-020,
2002/95/EC
2002/96/EC
O-277A
08-Apr-05
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PDF
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V8P10
Abstract: No abstract text available
Text: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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Original
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V8P10
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
08-Apr-05
V8P10
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PDF
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V10P10
Abstract: No abstract text available
Text: New Product V10P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES TMBS eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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Original
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V10P10
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
O-277Aany
18-Jul-08
V10P10
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SS3P5L & SS3P6L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power
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Original
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J-STD-020,
2002/95/EC
2002/96/EC
O-277A
18-Jul-08
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PDF
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2N705
Abstract: I960 ARMv Germanium mesa
Text: MIL-S-19500/86A 20 March 19o4_ SUPERSEDING MII/-S-19500/86 NAVY 6 June I960 ' MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM TYPE 2N705 This specification has been approved bv the Department of Defense agd is mandatory for use by the Department^ of the Armv. the Navv.
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OCR Scan
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MH/-S-19500/86A
I/-S-19500/86
2N705
MIL-S-19500
T0-18)
MIL-S-19500.
ruL-S-19500
2N705
I960
ARMv
Germanium mesa
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PDF
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