u28 sensor hall
Abstract: MLX2882 u28 hall marking 865 amplifier TLE4905 equivalent ss41 hall effect sensor melexis hall current sensor HAL105 UGN3132/33/34UA US2881
Text: 865;425;5# &026#+LJK#6HQVLWLYLW\#/DWFK#### HDWXUHV#DQG#%HQHILWV## • ■ ■ ■ ■ ■ Chopper Stabilized Amplifier Stage Optimized for BDC Motor Applications New Miniature Package/Thin, High Reliability Package# Operation Down to 3.5V CMOS for Optimum Stability, Quality and Cost
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US2881
US2882
u28 sensor hall
MLX2882
u28 hall
marking 865 amplifier
TLE4905 equivalent
ss41 hall effect sensor
melexis hall current sensor
HAL105
UGN3132/33/34UA
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Untitled
Abstract: No abstract text available
Text: 32E D • fl23b320 0017Eflfi T « S I P PNP Silicon Transistor SMBT A 70 SIEMENS/ SPCL-, SEMICONDS ' *7_ • For AF input stages and driver applications • High current gain • Low coilector-emitter saturation voltage B Type Marking Ordering code for
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fl23b320
0017Eflfi
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Untitled
Abstract: No abstract text available
Text: .100 X .100" Latch/Ejector Header Right Angle, 4 Wall, High Temp • Military with 3M’s 3518 polarizing key and center bump polarizations available • Optional ejector latches • Mounting holes for securing header to board • Shrouded to protect against physical and chemical
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TS-0492-06
QQ-N-290,
MIL-G-45204,
N3505-2)
N3505-3)
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tic 2530
Abstract: rs 121 012
Text: ALUMINUM ELECTROLYTIC CAPACITORS Miniature Sized, Low Impedance,High Reliability series Smaller Low Impedance Long Life Anti-Solvent Feature ALUMINUM ELECTROLYTIC CAPACITORS HE n îcK iîco n Lo w im p e d a n c e a n d hig h re lia b ility w ith s ta n d in g 4 0 0 0 h o u rs to 1 0 0 0 0 h o u rs .
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18X15
10X31
10X20
100kHz
/100kH
100kHz
tic 2530
rs 121 012
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C1554
Abstract: BKs sot-23 SIEMENS BJS marking BJs
Text: SIEMENS PNP Silicon AF Transistors BCW 61 BCX 71 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN Type Marking
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62702-C452
62702-C1585
62702-C1478
Q62702-C1556
Q62702-C1890
Q62702-C1891
Q62702-C1482
62702-C1586
62702-C1554
62702-C1654
C1554
BKs sot-23
SIEMENS BJS
marking BJs
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Untitled
Abstract: No abstract text available
Text: XBee 865/868LP RF Modules XBee RF Modules by Digi International Models: XBEE S8 Hardware: S8 Firmware: 8059 Digi International Inc. 11001 Bren Road East Minnetonka, MN 55343 877 912-3444 or 952 912-3444 http://www.digi.com 90002126_E 6/17/13 XBee® 865/868LP RF Modules
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865/868LP
865/868LPÂ
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8694M
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS SA3600 Low voltage dual-band RF front-end Product specification Supersedes data of 1999 March 18 Philips Semiconductors 1999 Nov 02 Philips Semiconductors Product specification Low voltage dual-band RF front-end SA3600 DESCRIPTION APPLICATIONS
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SA3600
SA3600
OT355-1
TSSOP24)
images/sa3600dh
8694M
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Untitled
Abstract: No abstract text available
Text: .100" x .100" Latch/Ejector Header Right Angle, 4 Wall, High Temp Military with 3M ’s 3518 polarizing key and center bump polarizations available Optional ejector latches Mounting holes for securing header to board Shrouded to protect against physical and chemical
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OCR Scan
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TS-0492-06
QQ-N-290,
MIL-G-45204,
MIL-P-81728
N3505-2)
-53XX
N3505-3)
-54XX
O05413
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2404
Abstract: C-865 V101F
Text: R g 4 01~RN2406 S UCON PNP EPITAXIAL TYPE SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. + Q5 £5-Q 3 FEATURES : . With Built-in Bias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts and Manufacturing Process
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RN2406
RN1401-1406
RN2401
RN2402
RN2403
RN2404
RN2405
RN2406
RN2401-2406
RN2401-2404
2404
C-865
V101F
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AC1515CFA12D.1-96E
Abstract: B45196 B45196H
Text: Chip Capacitors with Solid Electrolyte B 4 5 196-E, -H, -P B 45 197 fSMO Construction JJ • Tantalum capacitors with solid electrolyte, polar • Plastic case, flame-retardant UL 94 V-0 • Tinned terminals Features • • • • • • • High volumetric efficiency
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196-E,
fl235bOS
023SbGS
QG75Gb2
AC1515CFA12D.1-96E
B45196
B45196H
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abb entrelec relays
Abstract: RB 121 A abb entrelec rb111 abb entrelec rb 121 relays 1000-5-12VDC 1SNA 115 144 R1300 RB121 RB 122 A 1sna 399 967 r0100 rb 121
Text: Short Form Catalogue Relays Optocouplers R600 Series Relays and optocouplers R600 series Summary R600 interfaces Description . 3 Relay interfaces
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C0200
2005-IBF)
abb entrelec relays
RB 121 A
abb entrelec rb111
abb entrelec rb 121 relays
1000-5-12VDC
1SNA 115 144 R1300
RB121
RB 122 A
1sna 399 967 r0100
rb 121
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ZXTN08400BFF
Abstract: ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking
Text: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high
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ZXTN08400BFF
OT23F,
175mV
500mA
ZXTP08400BFF
OT23F
ZXTN08400BFF
ZXTN08400BFFTA
ZXTP08400BFF
sot23 6 device Marking
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TRANSISTOR MARKING 1d5
Abstract: No abstract text available
Text: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high
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ZXTN08400BFF
OT23F,
175mV
500mA
ZXTP08400BFF
OT23F
TRANSISTOR MARKING 1d5
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MMBT2907AM3T5G
Abstract: No abstract text available
Text: MMBT2907AM3T5G Preferred Device General Purpose Transistors PNP Silicon Features • This is a Pb−Free Device http://onsemi.com MAXIMUM RATINGS Rating Symbol 2907A Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc
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MMBT2907AM3T5G
MMBT2907AM3T5G
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cec PNP transistor
Abstract: pdta124et transistor PDTA124ET
Text: Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124ET FEATURES • Built-in bias resistors R1 and R2 typ. 22 kU each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space
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PDTC124ET.
PDTA124ET
PDTA124ET
cec PNP transistor
pdta124et transistor
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J673
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base
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MHVIC915R2
J673
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HVP16
Abstract: KVP16 LVEL16 MC100LVEP16 MC10LVEP16 marking code 5y
Text: MC10LVEP16, MC100LVEP16 2.5V / 3.3V ECL Differential Receiver/Driver Description MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 8 1 8 HVP16 AYWWXG G 8 1 Features TSSOP−8 DT SUFFIX CASE 948R • 240 ps Propagation Delay • Maximum Frequency > 4 GHz Typical
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MC10LVEP16,
MC100LVEP16
HVP16
KVP16
MC10/100LVEP16
MC10LVEP16/D
HVP16
KVP16
LVEL16
MC100LVEP16
MC10LVEP16
marking code 5y
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Untitled
Abstract: No abstract text available
Text: MC10LVEP16, MC100LVEP16 2.5V / 3.3V ECL Differential Receiver/Driver • 240 ps Propagation Delay • Maximum Frequency > 4 GHz Typical • PECL Mode Operating Range: VCC = 2.375 V to 3.8 V MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 8 1 8 HVP16 AYWWXG
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MC10LVEP16,
MC100LVEP16
MC10/100LVEP16
LVEL16
LVEL16,
LVEP16
MC10LVEP16/D
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Untitled
Abstract: No abstract text available
Text: 2SC5247 Silicon NPN Epitaxial HITACHI Application V H F / U H F wide band am plifier Features • H igh gain bandwidth product fT = 13.5 G H z typ • High gain, low noise figure PG = 17 dB typ, N F = 1.2 dB typ at f = 900 M H z Outline SM PAK 1. Emitter 2. Base
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2SC5247
ADE-208-281
rec08
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aluminium capacitor Can D6.3 package
Abstract: nichicon LOT date code Nichicon WEEK CODE
Text: Spec. No. N E - 5 4 1 6 S P E C I F I C A T I O N 0 F ALUMINIUM ELECTROLYTIC HE DWG. No. Ser i es sheet 1 of 23 APPROVED 7? H010423F1 CHECKED 77, . DESI GENED REV. LET. LET. CAPACITORS REVISIONS DATE DR. CK. AP. x iic h ic o n 1. SCOPE This specification covers "HE series" miniature single-ended aluminum
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H010423F1
C--5141
C-5102
30/xm
aluminium capacitor Can D6.3 package
nichicon LOT date code
Nichicon WEEK CODE
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PDF
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HVP16
Abstract: KVP16 LVEL16 MC100LVEP16 MC10LVEP16
Text: MC10LVEP16, MC100LVEP16 2.5V / 3.3V ECL Differential Receiver/Driver Description MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 8 1 TSSOP−8 DT SUFFIX CASE 948R • 240 ps Propagation Delay • Maximum Frequency > 4 GHz Typical • PECL Mode Operating Range: VCC = 2.375 V to 3.8 V
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MC10LVEP16,
MC100LVEP16
KVP16
HVP16
MC10/100LVEP16
MC10LVEP16/D
HVP16
KVP16
LVEL16
MC100LVEP16
MC10LVEP16
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HVP16
Abstract: KVP16 LVEL16 MC100LVEP16 MC10LVEP16 2015 soic8
Text: MC10LVEP16, MC100LVEP16 2.5V / 3.3V ECL Differential Receiver/Driver Description MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 8 1 TSSOP−8 DT SUFFIX CASE 948R • 240 ps Propagation Delay • Maximum Frequency > 4 GHz Typical • PECL Mode Operating Range: VCC = 2.375 V to 3.8 V
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MC10LVEP16,
MC100LVEP16
KVP16
HVP16
MC10/100LVEP16
MC10LVEP16/D
HVP16
KVP16
LVEL16
MC100LVEP16
MC10LVEP16
2015 soic8
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PDF
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marking 18T 19
Abstract: No abstract text available
Text: For technical assistance use the Networks Products number on the back cover. 4100T - Thin Film Molded DIP Product Characteristics Resistance R ange.50 to 100K ohm s Resistance Tolerance .±0.1% , ±0.5% , ±1% Temperature Coefficient
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4100T
100ppm
50ppm
25ppm
00T-001)
100pp
marking 18T 19
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A 564 transistor
Abstract: 3181 R33 transistor A 564
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
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