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    8550S* TRANSISTOR Search Results

    8550S* TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    8550S* TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23  DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier


    Original     		8550S OT-23 8550S 700mA 8050S 8550SL-x-AE3-R 8550SG-x-AE3-R 8550SL-x-T92-B 8550SG-x-T92-B 8550SL-x-T92-K PDF

    8550SL

    Abstract: transistor marking B9 MARKING B9 sot-23 8550S UTC 8550SL
    Text: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-23 FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8550S 1 TO-92 *Pb-free plating product number: 8550SL


    Original     		8550S OT-23 700mA 8550SL 8550S-x-AE3-R 8550SL-x-AE3-R 8550S-x-T92-B 8550SL-x-T92-B 8550S-x-T92-K 8550SL transistor marking B9 MARKING B9 sot-23 8550S UTC 8550SL PDF

    8550SG

    Abstract: 8550SL transistor 8550S UTC 8550SL 8050S 8550S UTC8550S PNP transistor 8050S pnp low saturation transistor sot23
    Text: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23 „ DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier


    Original     		8550S OT-23 8550S 700mA 8050S 8550S-x-AE3-R 8550S-x-T92-B 8550S-x-T92-K 8550SL-x-AE3-R 8550SL-x-T92-B 8550SG 8550SL transistor 8550S UTC 8550SL 8050S UTC8550S PNP transistor 8050S pnp low saturation transistor sot23 PDF

    B9D TRANSISTOR

    Abstract: PNP Transistor b9d SOT-23 marking B9D 8550SL marking b9d UTC 8550SL PNP transistor 8050S 8550SG sot 23 b9_d UTC8550S
    Text: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23 „ DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier


    Original     		8550S OT-23 8550S 700mA 8050S 8550SL 8550SG 8550S-x-AE3-R 8550S-x-T92-B 8550S-x-T92-K B9D TRANSISTOR PNP Transistor b9d SOT-23 marking B9D 8550SL marking b9d UTC 8550SL PNP transistor 8050S 8550SG sot 23 b9_d UTC8550S PDF

    8550S

    Abstract: 8550s* Transistor
    Text: 8550S 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3.BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		8550S -50mA -500mA -500mA, -20mA 30MHz 8550S 8550s* Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23  DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier


    Original     		8550S OT-23 8550S 700mA 8050S 8550SG-x-AE3-R 8550SL-x-T92-B 8550SG-x-T92-B 8550SL-x-T92-K 8550SG-x-T92-K PDF

    E8550S

    Abstract: transistor 8550S
    Text: 8550S PNP SILICON TRANSISTOR LOW V OLT AGE H I GH CU RREN T SM ALL SI GN AL PN P T RAN SI ST OR 3 1 2 SOT-23 ̈ DESCRI PT I ON The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications.


    Original     		8550S OT-23 8550S 700mA 8050S 8550S-x-AE3-R 8550S-x-T92-B 8550S-x-T92-K 8550SL-x-AE3-R 8550SL-x-T92-B E8550S transistor 8550S PDF

    8050S

    Abstract: D 8050s 8050S Transistor NPN transistor 8050s 8050s equivalent Transistor 8050s ic 8050s 8550S he 8050s
    Text: 8050S Semiconductor NPN Silicon Transistor Description • Medium power amplifier • Large collector current : ICMax.=700mA • Low collector saturation voltage enabling low-voltage operation Features • Center collector pin type • Complementary pair with 8550S


    Original     		8050S 700mA 8550S KST-9032-000 500mA, 8050S D 8050s 8050S Transistor NPN transistor 8050s 8050s equivalent Transistor 8050s ic 8050s 8550S he 8050s PDF

    8550S

    Abstract: transistor 8550S 8050S
    Text: 8550S Semiconductor PNP Silicon Transistor Description • Medium power amplifier • Large collector current : ICMax.=-700mA • Low collector saturation voltage enabling low-voltage operation Features • Center collector pin type • Complementary pair with 8050S


    Original     		8550S -700mA 8050S KST-9033-000 -50mA -500mA, 8550S transistor 8550S 8050S PDF

    transistor 8550S

    Abstract: 8550S 500ma 40v pnp
    Text: PNP TRANSISTOR 8550S -0.5A Power Dissipation: 0.625W Collector Current: -0.5A Collector-Base Voltage: -45V TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo


    Original     		8550S -100uA -100A -500mA, -50mA transistor 8550S 8550S 500ma 40v pnp PDF

    8050S Transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 8050S TRANSISTOR NPN FEATURES 1.EMITTER z Complimentary to 8550S z Collector Current: IC=0.5A 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		8050S 8550S 500mA 500mA, 30MHz 8050S Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO:


    Original     		8550S -50mA -500mA -500mA, -20mA 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: 8050S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 8550S * Collector C urrent: Ic=500mA * Collector D issipation: Pc=225mW Tc=25°C ABSOLUTE MAXIMUM RATINGS a t Tan*-25°C


    OCR Scan     		8050S 8550S 500mA 225mW 062in 300uS, 100uA 500mA PDF

    NPN transistor 8050s

    Abstract: 8050S 8550S
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TO-92 TRANSISTOR NPN FEATURES z Complimentary to 8550S z Collector current: IC=0.5A 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		8050S 8550S 500mA 500mA, 30MHz NPN transistor 8050s 8050S 8550S PDF

    8550S

    Abstract: No abstract text available
    Text: 8550S PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25


    Original     		8550S -500mA -500mA, -50mA -20mA 30MHz -100uA, PDF

    DUAL TRANSISTOR

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD IMZ88 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR  FEATURES *Both a 8550S chip and 8050S chip in a SMT package EQUIVALENT CIRCUITS  (6) (5) TR1 TR2 (1)  (4) (2) (3) ORDERING INFORMATION Ordering Number Note: 


    Original     		IMZ88 8550S 8050S IMZ88G-AG6-R OT-26 QW-R215-005 DUAL TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 8550S TRANSISTOR PNP FEATURE Excellent hFE linearity 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit


    Original     		8550S -100uA, -50mA -500mA -500mA, -20mA 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range


    Original     		8550S -50mA -500mA -500mA, -20mA 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD IMZ88 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ FEATURES *Both a 8550S chip and 8050S chip in a SMT package „ EQUIVALENT CIRCUITS (6) (5) (4) TR2 TR1 (1) „ (2) (3) ORDERING INFORMATION Ordering Number Lead Free Halogen Free


    Original     		IMZ88 8550S 8050S IMZ88L-AG6 IMZ88G-AG6-R IMZ88L-AG6-R OT-26 OT-26 QW-R215-005 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8550S PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.5±0.2 Power dissipation 0.625 W Tamb=25 C 14.3 ±0.2 PCM: Collector current ICM: 3.5 ±0.2 4.55±0.2 FEATURES


    Original     		8550S 01-Jun-2002 PDF

    8050S

    Abstract: 8550S IMZ88
    Text: UTC IMZ88 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Both a 8550S chip and 8050S chip in a SMT package APPLICATIONS *Class B push-pull audio amplifier *General purpose applications MARKING 4 5 EQUIVALENT CIRCUITS 6 4 (5) (6) SOT-26 Tr2 Z 8


    Original     		IMZ88 8550S 8050S OT-26 QW-R215-005 IMZ88 PDF

    he 8050s

    Abstract: transistor marking B9 MARKING B9 sot-23 8550SL UTC 8550SL
    Text: UNISONIC TECHNOLOGIES CO., 8550S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES 2 1 *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 3 MARKING SOT-23 B9 *Pb-free plating product number: 8550SL


    Original     		8550S 700mA 8050S OT-23 8550SL 8550S-AE3-R 8550SL-AE3-R OT-23 QW-R206-002 he 8050s transistor marking B9 MARKING B9 sot-23 8550SL UTC 8550SL PDF

    Untitled

    Abstract: No abstract text available
    Text: 8550S SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: SOT-23 * Complement to 8050S * Collector Current: Ic=-500mA * Collector D issipation: Pc=225mW Ta=25°C ABSOLUTE M AXIMUM R ATINGS a t Tan*-2$ C


    OCR Scan     		8550S OT-23 8050S -500mA 225mW 300uS, -100uA -50mA PDF

    8050S

    Abstract: No abstract text available
    Text: 8050S NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 1.25MAX 3. BASE 2.92 MIN 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane Features Complimentary to 8550S Collector current: IC=0.5A 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		8050S 25MAX 8550S 500mA 500mA, 30MHz PDF