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    852 D TRANSISTOR Search Results

    852 D TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    852 D TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN transistor mhz s-parameter

    Abstract: transistor c 2316
    Text: S 852 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low supply voltage


    Original     		PDF D-74025 NPN transistor mhz s-parameter transistor c 2316

    BCW89R

    Abstract: BCW89 DSA003674
    Text: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW89 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059


    Original     		PDF BCW89 BCW89R -10mA, -50mA, 35MHz 200Hz BCW89R BCW89 DSA003674

    BCW70R

    Abstract: BCW69R BCW69 BCW70 720 sot23 DSA003673
    Text: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW69 BCW70 BCW69 BCW70 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085


    Original     		PDF BCW69 BCW70 BCW69R BCW70R -10mA, -50mA, BCW70R BCW69R BCW69 BCW70 720 sot23 DSA003673

    ZTX618

    Abstract: ZTX718 DSA003771
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX618 THERMAL CHARACTERISTICS PARAMETER SYMBOL Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Rth j-amb 1 Rth(j-amb)2 † MAX. UNIT 175 116 °C/W °C/W 180 160 D=1(D.C.) t1 120 100 tP D=t1


    Original     		PDF ZTX618 ZTX718 1995Telephone: ZTX618 ZTX718 DSA003771

    MJE 280 power transistor

    Abstract: ZTX1048A transistor bf 494 ZTX 450 F 1048A NPN Transistor 10A 100V DSA003762 136E-12
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1048A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 3 – FEBRUARY 1995


    Original     		PDF ZTX1048A 100ms NY11725 MJE 280 power transistor ZTX1048A transistor bf 494 ZTX 450 F 1048A NPN Transistor 10A 100V DSA003762 136E-12

    ZTX1053A

    Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am


    Original     		PDF ZTX1053A 100ms NY11725 ZTX1053A BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12

    ztx1056A

    Abstract: BF600 ztx1056 DSA003763
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve


    Original     		PDF ZTX1056A 100ms ZTX1056A 41E-12 0E-13 0E-10 1E-12 6E-12 800E-12 BF600 ztx1056 DSA003763

    tf600

    Abstract: IC4a ZTX1051A DSA003762
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am


    Original     		PDF ZTX1051A 100ms NY11725 tf600 IC4a ZTX1051A DSA003762

    bf500

    Abstract: ZTX1055A 161627 DSA003762
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve


    Original     		PDF ZTX1055A 100ms ZTX1055A 60E-12 0E-13 0E-10 3E-12 6E-12 700E-12 bf500 161627 DSA003762

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZTX855 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance


    Original     		PDF ZTX855 ZTX1056A NY11725

    TF-450

    Abstract: BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible re tu D=0.1 0.50 ra pe 80 60 C B m te D=0.5 0.75 t en bi tp 120 Am


    Original     		PDF ZTX1047A 100ms NY11725 TF-450 BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761

    ZXT12P40DX

    Abstract: MO-187 TS16949 ZXT12P40DXTA ZXT12P40DXTC
    Text: ZXT12P40DX SuperSOT4 DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 75m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		PDF ZXT12P40DX ZXT12P40DX MO-187 TS16949 ZXT12P40DXTA ZXT12P40DXTC

    2SB827

    Abstract: 2SD1063 SC-65
    Text: 2SD1063 NPN PLANAR SILICON TRANSISTOR SC-65 ! PSW / D / DDC ! COMPLEMENTARY TO 2SB827 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature


    Original     		PDF 2SD1063 SC-65 2SB827 2SB827 2SD1063 SC-65

    ZBD849

    Abstract: transistor bf 970
    Text: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching


    Original     		PDF ZBD849 ZBD849 transistor bf 970

    BLF177

    Abstract: SOT121 Package 727 Transistor power values 2222 122 capacitor philips transistor marking code HF MGP100 2222 632 series capacitor 2222 852 47103
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF177 HF/VHF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION


    Original     		PDF BLF177 SC08a MBB072 MLA876 OT121 BLF177 SOT121 Package 727 Transistor power values 2222 122 capacitor philips transistor marking code HF MGP100 2222 632 series capacitor 2222 852 47103

    2SB827

    Abstract: 2SD1063 SC-65
    Text: 2SB827 PNP PLANAR SILICON TRANSISTOR SC-65 ! PSW / D / DDC ! COMPLEMENTARY TO 2SD1063 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature


    Original     		PDF 2SB827 SC-65 2SD1063 2SB827 2SD1063 SC-65

    BLF177

    Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244
    Text: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control


    OCR Scan     		PDF BLF177 OT121 MBA379 philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244

    Philips 2222 capacitor

    Abstract: philips capacitor philips capacitor 2222
    Text: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control


    OCR Scan     		PDF BLF177 OT121 Philips 2222 capacitor philips capacitor philips capacitor 2222

    ujt as a relaxation oscillator

    Abstract: UJT 2N4851 Unit junction transistor UJT 2N4853 applications of ujt MU851 diode w300 2SC 1387 2N4851 EB20
    Text: MU851 SILICON thru MU853 SILICON ANNULAR UNIJUNCTION TRANSISTORS . . . designed fo r com puter and industrial applications requiring highdensity m ounting. These devices are used in pulse, tim ing, triggering, sensing and oscillator circuits. The annular process provides low leak­


    OCR Scan     		PDF MU851 MU853 MU853) 2N4851 2N4853 ujt as a relaxation oscillator UJT 2N4851 Unit junction transistor UJT applications of ujt MU851 diode w300 2SC 1387 EB20

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures


    OCR Scan     		PDF BLF544 OT171

    philips ferroxcube 4c6

    Abstract: ferroxcube 4322 020 97171 68w transistor transistor 68W MCA264 choke marking nb 03 FERROXCUBE 4330 BLF175 ferroxcube 4322 M11 marking transistor
    Text: Philips Semiconductors Product specification HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES 7 ^ 3 1 -// SbE D I 7110Û2L BLF175 DGM3712 2Ô2 « P H I N PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control


    OCR Scan     		PDF BLF175 0G43712 MBB072-2 OT123 711DflSb D04372b philips ferroxcube 4c6 ferroxcube 4322 020 97171 68w transistor transistor 68W MCA264 choke marking nb 03 FERROXCUBE 4330 BLF175 ferroxcube 4322 M11 marking transistor

    ferroxcube 4322 020 97171

    Abstract: philips ferroxcube 4c6 D1 Marking SOT123 BLF175 RF transistor marking code Mt UBB0711 bje resistor MCA264 CA-272 ferroxcube 4322
    Text: P h n ip ^ e m ic o n d u c to i^ ^ ^ ^ • b b5 3 T 31 □□2 T6 bM 4□4 WÊ A P X Product specification HF/VHF power MOS transistor BLF175 N AMER P H I L I P S / D I S C R E T E FEATURES • • • • • • PIN CONFIGURATION High power gain Low intermodulation distortion


    OCR Scan     		PDF BLF175 OT123 bb53131 BLF175 MCA25S ferroxcube 4322 020 97171 philips ferroxcube 4c6 D1 Marking SOT123 RF transistor marking code Mt UBB0711 bje resistor MCA264 CA-272 ferroxcube 4322

    transistor dk qq

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS [Mm SMEET BLF177 HF/VHF power MOS transistor 1998 Jul 02 Product specification Supersedes data of September 1992 File under Discrete Semiconductors, SC08a Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF BLF177 SC08a BLF177 OT121B SCA60 08/00/03/pp20 transistor dk qq

    Untitled

    Abstract: No abstract text available
    Text: bbSa^El ODETBbM 404 « A P X Philips Semiconductors Product specification HF/VHF power MOS transistor — BLF175 N AMER PHILIPS/DISCRETE FEATURES b'JE D PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability


    OCR Scan     		PDF BLF175 OT123 MCA26 bbS3T31