or31
Abstract: toroid cores or19 SM-70S sm60 19-32H OR22 OR100 PL-11 SM8T
Text: SAMWHA ELECTRONICS TOROID CORES OR2~OR100 Ordering Code System PL-9 Material Core Type OR 4x1.3-2.3H Core Size 115 v 116 SAMWHA ELECTRONICS OR CORES Dimensions in mm Part No. A Core Set Parameters B C C1 mm-1 Le(mm) Ae(mm2) Ve(mm3) Aw(mm2) W(g) OR2.5×1.3-1.3H
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OR100
25-38HU
13-39H
20-39H
20-51H
22-51H
24-51H
OR100
30-60H
or31
toroid cores
or19
SM-70S
sm60
19-32H
OR22
PL-11
SM8T
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7390
Abstract: No abstract text available
Text: ® CLD-DS80 Rev 1A Product family data sheet Cree XLamp CXA3070 LED Product Description features Table of Contents The XLamp® CXA3070 LED array • Available in 4-step and 2-step Characteristics. 2 expands Cree’s family of high‑flux,
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CLD-DS80
CXA3070
CXA30XX
7390
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7390
Abstract: No abstract text available
Text: CLD-DS80 Rev 1 Product family data sheet ® Cree XLamp CXA3070 LED Product Description features Table of Contents The XLamp® CXA3070 LED array • Available in 4-step and 2-step Characteristics. 2 expands Cree’s family of high‑flux,
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CLD-DS80
CXA3070
CXA30XX
7390
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Untitled
Abstract: No abstract text available
Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general
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FLX107MH-12
FLX107MH-12
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FLX107MH-12
Abstract: No abstract text available
Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general
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FLX107MH-12
FLX107MH-12
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FLX107MH-12
Abstract: No abstract text available
Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general
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FLX107MH-12
FLX107MH-12
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FLK207XV
Abstract: GaAs FET chip
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
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FLK207XV
FLK207XV
GaAs FET chip
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Untitled
Abstract: No abstract text available
Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general
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FLX107MH-12
FLX107MH-12
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Untitled
Abstract: No abstract text available
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
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FLK207XV
FLK207XV
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FUJITSU XBAND
Abstract: No abstract text available
Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general
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FLX107MH-12
FLX107MH-12
FCSI0598M200
FUJITSU XBAND
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FLX107MH-12
Abstract: FUJITSU XBAND
Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general
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FLX107MH-12
FLX107MH-12
FCSI0598M200
FUJITSU XBAND
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Untitled
Abstract: No abstract text available
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
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FLK207XV
FLK207XV
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GaAs FET HEMT Chips
Abstract: 876 fujitsu fet general
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: hadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
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FLK207XV
FLK207XV
FCSI0598M200
GaAs FET HEMT Chips
876 fujitsu
fet general
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FLK207XV
Abstract: GaAs FET HEMT Chips
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
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FLK207XV
FLK207XV
FCSI0598M200
GaAs FET HEMT Chips
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NEC 2561
Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Text: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym
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NE72218
NE72218-T1
NE72218-T2
NEC 2561
nec 2561 le
NEC 2561 LE 301
sem 2105 16 pin
saa 1074
SAA 1061
nec 2561 4 pin
cp 1099
c 945 p 331
saa 1049
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CQ 765
Abstract: CQ 637 CQ 818 FLK022
Text: FLK022XP : FLK022XV GaAs F ET u n dH E M T Chips ELECTRICAL CHARACTERISE CS Amb ent Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions 100 150 mA - 50 - mS -1.0 -2.0 -3.5 V -5 - - V 23 24 - dBm 6 7 - dB - 32 - % VdS = 5V, Ids = 65mA
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FLK022XP
FLK022XV
10pcs.
25jim
CQ 765
CQ 637
CQ 818
FLK022
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Untitled
Abstract: No abstract text available
Text: Series VPR Material Specifications Coating Conformal vitreous enamel Core Ceramic Terminals Tinned terminals, solderable to MIL-R-26 standards Weight VPR5F VPR10F VPR20H 5 watt 10 watt 20 watt .192 oz. .304 oz. .528 oz. 5.38 gms. 8.51 gms. 14.78 gms. Series VPR Electrical Specifications
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MIL-R-26
VPR10F
VPR20H
Non-inductive30
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ILR 1-11-3
Abstract: VPR-20H
Text: Series V P R Series V P R Material Specifications 5 - 8 , 1 0 - 1 2 , 2 0 Wa t t Lug and Le ad . W irew o un d Resistors e "" «a Coating Conformai vitreous enamel Core Ceramic Terminals Tinned terminals, solderable to MIL-R-26 standards Weight VPR5F V PR 1OF
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MIL-R-26
VPR20H
VPR10F-150
ILR 1-11-3
VPR-20H
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FLK022
Abstract: FLK022XV GaAs FET HEMT Chips FLK022XP
Text: FLK022XP, FLK022XV fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • • • • High Output Power: P-|dB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: riadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK022XP, and FLK022XV chip is a power GaAs FET that is
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FLK022XP,
FLK022XV
FLK022XV
FLK022XP
FLK022
GaAs FET HEMT Chips
FLK022XP
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et 1103
Abstract: FLK012XP
Text: FLK012XP Ga A s F ET and HEMT Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions - 60 90 mA - 30 - mS -1.0 -2.0 -3.5 V -5 - - V 19.5 20.5 - dBm 7.0 8.0 - dB - 26 - % - 2.5 - dB 7 - dB 11
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FLK012XP
12GHz
et 1103
FLK012XP
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FLK022XV
Abstract: No abstract text available
Text: FLK022XP, FLK022XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION The FLK022XP, and FLK022XV chip is a pow er G aAs FET that is
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FLK022XP,
FLK022XV
FLK022XV
FLK022XP
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FUJITSU XBAND
Abstract: FLX107MH-12 fujitsu gaas fet
Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 33% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLX107M H-12 is a pow er G aAs FET that is designed for general
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FLX107MH-12
FLX107MH-12
FCSI0598M200
FUJITSU XBAND
fujitsu gaas fet
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FLK012
Abstract: FLK012XP
Text: FLK012XP c?„. G a A s F E T a n d H E M T Chips r U J IlM J FEATURES • • • • High Output Power: P-|dB = 20.5dBm Typ. High Gain: G-j^B = 8.0dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability DESCRIPTION The FLK012XP chip is a power GaAs FET that is designed for
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FLK012XP
FLK012XP
FLK012
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Untitled
Abstract: No abstract text available
Text: FLK012XP p| .Ç?TÇ|. GaAs FET and HEMT Chips rUJIlMJ FEATURES • H igh O u tp u t P ow er: P-|<jB = 2 0 .5 d B m T yp . • H igh G ain: G -j^ B = 8.0d B (T yp .) • H igh PAE: r i add = 26 % (T yp .) • P roven R elia b ility DESCRIPTION T h e F L K 0 1 2 X P c h ip is a p o w e r G aA s F E T th a t is d e sig n e d fo r
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FLK012XP
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