Untitled
Abstract: No abstract text available
Text: 10-FZ06NBA084FP-M306L48 preliminary datasheet flow Boost0 600V/84A PS* Features flow0 12mm housing ● *PS: 2x84A parallel switch 75A IGBT and 99mΩ C6 ● ultrafast IGBT with C6 MOSFET and SiC buck diodes ● symmetric booster ● ultra fast switching frequency
|
Original
|
10-FZ06NBA084FP-M306L48
00V/84A
2x84A
FZ06NBA084FP
|
PDF
|
digital phase shifter mhz
Abstract: "Phase Shifters" digital phase shifter phase shifters
Text: PTB & PTM-84A Series 8-BIT DIGITAL PHASE SHIFTER 20 to 100 MHz / 1.4 Phase Resol. / Monotonic / Broadband, Switched Cable Design / BNC or SMA PRINCIPAL SPECIFICATIONS GENERAL SPECIFICATIONS Calibration Frequency, fc, MHz Usable Bandwidth SMA Model Number BNC
|
Original
|
PTM-84A
PTM-84A-*
PTB-84A-*
24May96
26Apr96
digital phase shifter mhz
"Phase Shifters"
digital phase shifter
phase shifters
|
PDF
|
BDW83D
Abstract: BDW83C BDW83 BDW83B BDW83A BDW84
Text: SavantIC Semiconductor Product Specification BDW83/83A/83B/83C/83D Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching
|
Original
|
BDW83/83A/83B/83C/83D
BDW84/84A/84B/84C/84D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83C
BDW83
BDW83B
BDW83A
BDW84
|
PDF
|
ultra fast recovery diode 500V
Abstract: No abstract text available
Text: APT84F50B2 APT84F50L 500V, 84A, 0.065Ω Max, trr ≤320ns N-Channel FREDFET T-MaxTM Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low
|
Original
|
APT84F50B2
APT84F50L
320ns
O-264
APT84F50B2
O-247
ultra fast recovery diode 500V
|
PDF
|
BDW84
Abstract: BDW84D BDW84A BDW84C DIODE 84A bdw84b Darlington Transistors
Text: Inchange Semiconductor Product Specification BDW84/84A/84B/84C/84D Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDW83/83A/83B/83C/83D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in power linear and switching
|
Original
|
BDW84/84A/84B/84C/84D
BDW83/83A/83B/83C/83D
BDW84
BDW84B
BDW84C
BDW84D
BDW84
BDW84D
BDW84A
BDW84C
DIODE 84A
bdw84b
Darlington Transistors
|
PDF
|
APT84F50B2
Abstract: APT84F50L MIC4452
Text: APT84F50B2 APT84F50L 500V, 84A, 0.065Ω Max, trr ≤320ns N-Channel FREDFET T-MaxTM Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low
|
Original
|
APT84F50B2
APT84F50L
320ns
O-264
O-247
APT84F50B2
APT84F50L
MIC4452
|
PDF
|
nf 0036 diode
Abstract: No abstract text available
Text: APT30M36B2FLL APT30M36LFLL 84A 0.036Ω 300V POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
|
Original
|
APT30M36B2FLL
APT30M36LFLL
O-264
O-264
O-247
nf 0036 diode
|
PDF
|
marking code 43a
Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A Description
|
Original
|
91372B
IRF1010NS/L
IRF1010NS)
IRF1010NL)
packag10)
marking code 43a
43A MARKING CODE
IRF1010NS
AN-994
IRF1010N
IRF1010NL
|
PDF
|
AN-994
Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A Description
|
Original
|
91372B
IRF1010NS/L
IRF1010NS)
IRF1010NL)
AN-994
IRF1010N
IRF1010NL
IRF1010NS
to262 pcb footprint
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT30M36B2LL APT30M36LLL 300V 84A 0.036W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
|
Original
|
APT30M36B2LL
APT30M36LLL
O-264
O-264
O-247
|
PDF
|
APT30M36B2LL
Abstract: APT30M36LLL
Text: APT30M36B2LL APT30M36LLL 300V 84A 0.036Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
APT30M36B2LL
APT30M36LLL
O-264
O-264
O-247
APT30M36B2LL
APT30M36LLL
|
PDF
|
ssf6008
Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V 3150 mosfet
Text: SSF6008 Feathers: ID =84A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8mΩ Fully characterized avalanche voltage and current Description: The SSF6008 is a new generation of high voltage and low current N–Channel enhancement mode trench power
|
Original
|
SSF6008
SSF6008
SSF6008TOP
T0-220)
O-220
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
3150 mosfet
|
PDF
|
marking F53
Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS SS2000
Text: PD - 9.1372A IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.011Ω G ID = 84A
|
Original
|
IRF1010NS/L
IRF1010NS)
IRF1010NL)
marking F53
AN-994
IRF1010N
IRF1010NL
IRF1010NS
SS2000
|
PDF
|
BDW84C
Abstract: BDW84 BDW84B BDW84A DIODE 84A BDW84D
Text: SavantIC Semiconductor Product Specification BDW84/84A/84B/84C/84D Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDW83/83A/83B/83C/83D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching
|
Original
|
BDW84/84A/84B/84C/84D
BDW83/83A/83B/83C/83D
BDW84
BDW84A
BDW84B
BDW84C
BDW84C
BDW84
BDW84B
BDW84A
DIODE 84A
BDW84D
|
PDF
|
|
|
ISD50A
Abstract: NS BR 1010 690 mosfet
Text: E 1010 HEXFET z Advanced Process Technology z Ultra Low On-Resistance z Dynamic dv/dt Rating Power MOSFET VDSS = 60V z 175°C Operating Temperature z Fast Switching z Fully Avalanche Rated ID = 84A RDS ON =13mΩ Description Advanced HEXFET® Power MOSFETs from
|
Original
|
O-220
00A/s
width400s;
ISD50A,
di/dt230A/s,
TJ175
ISD50A
NS BR 1010
690 mosfet
|
PDF
|
APT30M36B2FLL
Abstract: APT30M36LFLL
Text: APT30M36B2FLL APT30M36LFLL 300V POWER MOS 7 R FREDFET FREDFET 84A 0.036Ω B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
APT30M36B2FLL
APT30M36LFLL
O-264
O-264
O-247
APT30M36B2FLL
APT30M36LFLL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94965A IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description
|
Original
|
4965A
IRF1010EPbF
O-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP9990GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D BVDSS 60V RDS ON SO-8 Compatible with Heatsink Low On-resistance ID G RoHS Compliant & Halogen-Free 5m 84A S D Description
|
Original
|
AP9990GMT-HF
Uni00
100us
100ms
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description
|
Original
|
IRF1010EPbF
O-220
fo20AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT80F60J 600V, 84A, 0.055Ω Max, trr ≤ 370ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
|
Original
|
APT80F60J
370ns
OT-227
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT80F60J 600V, 84A, 0.055Ω Max, trr ≤ 370ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
|
Original
|
APT80F60J
370ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PTB & PTM-84A Series 8-BIT DIGITAL PHASE SHIFTER 20 to 100 MHz / 1.4' Phase Resol. / Monotonie / Broadband, Switched Cable Design / BNC or SMA PRINCIPAL SPECIFICATIONS GENERAL SPECIFICATIONS Calibration Frequency, fc, MHz Usable Bandwidth SMA Model Number
|
OCR Scan
|
PTM-84A
PTM-84A-*
PTB-84A-*
24May96
K201-575-0531
26Apr96
/FAX201-575-0531
|
PDF
|
UDN2981 application note
Abstract: UDN2981
Text: 2981 2984 THRl 8-CHANNEL SOURCE DRIVERS UDN2982/84LW UDN2981-84A Recommended for applications requiring separate logic and load grounds, load supply voltages to 80 V, and load currents to 500 mA, the UDN2981A through UDN2984A/LW 8-channel source drivers are
|
OCR Scan
|
UDN2982/84LW
UDN2981-84A
UDN2981A
UDN2984A/LW
UDN2983A
UDN2982A/LW
UDN2981 application note
UDN2981
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 9.1278C International IO R Rectifier IRF1010N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^DS on = Id = 0 011 £1 84A(D Description
|
OCR Scan
|
1278C
IRF1010N
O-220
|
PDF
|
