848 diode
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD120136 TECHNICAL DATA DATA SHEET 848, REV. B SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200 C Operating Temperature Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra low Reverse Leakage Current
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SHD120136
848 diode
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SHD120136
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD120136 TECHNICAL DATA DATA SHEET 848, REV. - SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200C Operating Temperature Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features:
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SHD120136
SHD120136
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SHD120136
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD120136 TECHNICAL DATA DATA SHEET 848, REV. A SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200°C Operating Temperature Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
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SHD120136
SHD120136
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Hitachi DSA002715
Abstract: No abstract text available
Text: HVD350B Variable Capacitance Diode for VCO ADE-208-848 Z Rev.0 Jun. 2000 Features • • • • High capacitance ratio. (n = 2.8.min) Low series resistance. (rs = 0.5Ωmax) Good C-V linearity. Super small Flat Package (SFP) is suitable for surface mount design.
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HVD350B
ADE-208-848
HVD350B
D-85622
Hitachi DSA002715
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Untitled
Abstract: No abstract text available
Text: IRKD270-06N Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current270 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.7.85k V(FM) Max.(V) Forward Voltage1.48 @I(FM) (A) (Test Condition)848 @Temp. (øC) (Test Condition)150õ
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IRKD270-06N
Current270
Voltage600
Current50m
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Untitled
Abstract: No abstract text available
Text: Data Sheet HL8342MG/43MG GaAlAs Laser Diode 852nm/50mW Features: Outline • Infrared light output: 848~856nm Single transverse mode Optical output power: 50mW CW Low operating current: 75mA Typ. Low operating voltage: 2.4V Max. Operating temperature: +60°C
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HL8342MG/43MG
852nm/50mW
856nm
HL8342MG/43MG
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Untitled
Abstract: No abstract text available
Text: IRKD270-18N Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current270 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.7.85k V(FM) Max.(V) Forward Voltage1.48 @I(FM) (A) (Test Condition)848 @Temp. (øC) (Test Condition)150õ
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IRKD270-18N
Current270
Voltage1800
Current50m
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Untitled
Abstract: No abstract text available
Text: IRKD270-14 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current270 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.7.85k V(FM) Max.(V) Forward Voltage1.48 @I(FM) (A) (Test Condition)848 @Temp. (øC) (Test Condition)150õ
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IRKD270-14
Current270
Voltage1400
Current50m
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HVD350B
Abstract: DSA003644
Text: HVD350B Variable Capacitance Diode for VCO ADE-208-848 Z Rev. 0 Jun. 2000 Features • High capacitance ratio. (n = 2.8.min) • Low series resistance. (rs = 0.5Ωmax) • Good C-V linearity. • Super small Flat Package (SFP) is suitable for surface mount design.
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HVD350B
ADE-208-848
HVD350B
DSA003644
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Untitled
Abstract: No abstract text available
Text: IRKD270-26 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current270 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage2600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.7.85k V(FM) Max.(V) Forward Voltage1.48 @I(FM) (A) (Test Condition)848 @Temp. (øC) (Test Condition)150õ
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IRKD270-26
Current270
Voltage2600
Current50m
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HVD350B
Abstract: No abstract text available
Text: HVD350B Variable Capacitance Diode for VCO REJ03G0497-0100 Previous: ADE-208-848 Rev.1.00 Jan 20, 2005 Features • • • • High capacitance ratio. (n = 2.80 min) Low series resistance. (rs = 0.50 Ω max) Good C-V linearity. Super small Flat Lead Package (SFP) is suitable for surface mount design.
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HVD350B
REJ03G0497-0100
ADE-208-848)
Unit2607
HVD350B
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diode d39
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDLE-033-848 REV.: 1 ECN : Page: 1/5 5.0mm Multi-Color Round Type LED Lamps PART NO. :336HGW/D39 █ Features : ● Two chips are matched for uniform █ Package Dimensions: light output, wide viewing angle ●
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CDLE-033-848
336HGW/D39
T01700
C90560432
diode d39
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Untitled
Abstract: No abstract text available
Text: RF430CL330H www.ti.com SLAS916A – NOVEMBER 2012 – REVISED JUNE 2013 DYNAMIC NFC INTERFACE TRANSPONDER FEATURES 1 • • 2 • NFC Tag Type 4 ISO14443B Compliant 13.56-MHz RF Interface Supports up to 848 kbps SPI or I2C Interface to Write and Read NDEF
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RF430CL330H
SLAS916A
ISO14443B
56-MHz
RF430CL330H
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Untitled
Abstract: No abstract text available
Text: ^¡»litron PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY, WEST PALM BEACH. FLORIDA 33407 TEL: 407 848-4311 FAX: (407) 863-5946 ULTRA FAST RECOVERY RECTIFIERS 400V, MAXIMUM RATINGS PER DIODE UNITS SYMBOL PARAMETER WORKING PEAK REVERSE VOLTAGE VRRM 400 V 8 A 100
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SDR08400
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Untitled
Abstract: No abstract text available
Text: M litron PRODUCT CATALO« DEVICES.INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH, FLORIDA 33404 TEL: 407 848-4311 • TLX: 51-3435 • FAX: (407) 863-5946 SCHOTTKY POWER RECTIFIERS 100V, 60A, 1.15V MAXIMUM RATINGS PER DIODE PARAMETER SYMBOL WORKING PEAK VRRM
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SDS60100
MIL-S-19500
MIL-STD-883
300nS,
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Untitled
Abstract: No abstract text available
Text: Æiltron PRODUCT CÂTÂL ' DEVICES.INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH, FLORIDA 33404 TEL: 407 848-4311 • TLX: 51-3435 • FAX: (407) 863-5946 ULTRA FAST RECOVERY RECTIFIERS 100V, 3 0 A , 50ns MAXIMUM RATINGS PER DIODE PARAMETER SYMBOL WORKING PEAK
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SDR30100
63bflbD2
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Untitled
Abstract: No abstract text available
Text: PRODUCT CATALOG_ -rfalltran 3301 ELECTRONICS WAY. WEST PALM BEACH. FLORIDA 33407 FAX: 407 863-5946 TEL:(407) 848-4311 SCHOTTKY POWER RECTIFIERS 45V, IOA, 0 .65 V SDS10045 SDS10045 SDS10045 SDS10045 SDS10045 JAA JAB JDA JFA JFB FEATURES • RUGGED PACKAGE
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SDS10045
MIL-S-19500
MIL-STD-883
100KHZ
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tl 4311
Abstract: No abstract text available
Text: SQLITRON DEVICES INC A n n HflE D • ö3bßboe ooo3bbD 7SG PRODUCT CATALOG DEVICES.INC. 1177 BLUE HERON BLVD.• RIVIERA BEACH. , ÏIDA 33404 TEL: 407 848-43il » T UO 51-3436* FAX: (407; 8S3-5946 MAXIMUM RATINGS PER DIODE SYMBOL PARAMETER WORKING PEAK
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63b6b02
SDR650
MIL-S-19500
TJ-25Â
TJ-125
300MS.
tl 4311
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SDS60045
Abstract: No abstract text available
Text: JHltron PRO D U CT DEVICES.INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH. FLORIDA 33404 TEL: 407 848-4311 • TLX: 51-3435 • FAX: (407) 863-5946 SCHOTTKY POWER RECTIFIERS MAXIMUM RATINGS PER DIODE PARAMETER 45V, 6 0 A , 0.85V UNITS SYMBOL WORKING PEAK VRRM
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SDSG0045
SDS60045
5DS80045
mil-std-883
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N 407 Diode
Abstract: No abstract text available
Text: ^ litro n PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY • WEST PALM BEACH.FLORIDA 33407 TEL: 407 848-4311 • TLX: 51-3435 • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET 600V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Vo It.(1) VDSS
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SDFC40
SDFC40
N 407 Diode
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Untitled
Abstract: No abstract text available
Text: Æutron PRODUCT DEVICES.INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH, FLORIDA 3340-4 TEL: 407 848-4311 • TLX: 51-3435 «FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FE T 1000V, 2.0A , ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Volt.(l)
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SDF2N100
di/dt-100A/nS
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SDS20045
Abstract: N 407 Diode
Text: Ætïtron PRODUCT OÂTÂLÛ' DE V I C ES . I NC . 1177 BLUE HERON BLVD. • RIVIERA BEACH. FLORIDA 33404 TEL: 407 848-4311 • TLX: 51-3435 »FAX: (407) 863-5946 SCHOTTKY POWER RECTIFIERS 45V, 2 0 A , 0.70V MAXIMUM RATINGS PER DIODE PARAMETER UNITS SYMBOL
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5DS20045
SDS20045
MIL-S-19500
MIL-STD-883
N 407 Diode
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GH13D
Abstract: No abstract text available
Text: Æ lltron PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY • WEST PALM BEACH. FLORIDA 33407 TEL: 407 848-4311 • TLX: 51-3435 • F A X : (407) 863-5946 P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATING S PARAMETER (Rgs-I.OMo) (1) Gate-Source Voltage Con t inuous
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-100V
IF--15A.
di/dt-100A/
GH13D
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Untitled
Abstract: No abstract text available
Text: Æi\tron PRODUCT DEVICES.INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH. FLORIDA 33404 TEL: 407 848-4311 • TLX: 51-3435 • FAX: (407) 863-S94S N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER (Rgs=1.0Mo ) (1) Gate-Source Voltage Con ti nuous
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863-S94S
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