Untitled
Abstract: No abstract text available
Text: epitex 5 STEM TYPE LED L770/840-40C59-I Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L770/840-40C59-I multi-wavelength LED •Outer dimension(Unit: mm) L740/840-40C59-I consists of an AlGaAs’(770, 840m), LED mounted on TO-46 stem with a glass flat lens.
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L770/840-40C59-I
L740/840-40C59-I
770nm
840nm
400um
770nm,
840nm
J-6512.
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Untitled
Abstract: No abstract text available
Text: epitex 5 STEM TYPE LED L770/840-40D59 Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L770/840-40D59 multi-wavelength LED •Outer dimension(Unit: mm) L740/840-40D59 consists of an AlGaAs’(770, 840m), LED mounted on TO-46 stem with a glass flat lens.
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L770/840-40D59
L740/840-40D59
770nm
840nm
400um
770nm,
840nm
J-6512.
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840-05A
Abstract: 760nm
Text: epitex Opto-Device & Custom LED BI-COLOR Φ5 MOLD LED L760/840-05A Lead Pb Free Product – RoHS Compliant L760/840-05A Bi-Color LED for medical analysis Bi-color LED of L760/840-05A consists of DDH structure AlGaAs LEDs mounted on a lead frame with a clear epoxy lens.
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L760/840-05A
L760/840-05A
760nm
840nm
840-05A
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED L760/840-05A BI-COLOR f5 MOLD LED L760/840-05A Bi-Color LED for medical analysis Bi-color LED of L760/840-05A consists of DDH structure AlGaAs LEDs mounted on a lead frame with a clear epoxy lens. On forward bias it emits a band of visible light, which peaks 760nm and 840nm at anode common.
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L760/840-05A
760/840-05A
L760/840-05A
760nm
840nm
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S3590
Abstract: Spectra Physics A35 diode L2656 noise source diode equivalent circuit diagram of led
Text: typeset using JPSJ.sty <ver.0.7d> Dependence of an LED Noise on Current Source Impedance Takasi EndoÉ, Eitaro Morimoto1 , Yutaka Hirayoshi1 and Kouich Toyoshima Faculty of Liberal Arts, Saga University, Saga 840 1 Department of Physics, Saga University, Saga 840
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SCHEMATIC DIAGRAM OF POWER SAVER DEVICE
Abstract: magnetron lamps NL10250-1 10 kw schematic induction heating microwave oven magnetron schematic diagram induction heating NL10250 power supply for magnetron schema cpu LEMO
Text: SM 840 E WITH EXTENDED VOLTAGE CAPABILITY SWITCHING POWER GENERATOR FOR 2 KW MAGNETRON TECHNICAL NOTE Issue June 2002 SM 840 E Dichiarazione CE di Conformità CE Declaration of Conformity Nome del costruttore: Manufacturer’s Name: ALTER s.r.l Indirizzo del costruttore:
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SM840
TMx20
SM840E
TM020
TMA20
44SET840
SCHEMATIC DIAGRAM OF POWER SAVER DEVICE
magnetron lamps
NL10250-1
10 kw schematic induction heating
microwave oven magnetron
schematic diagram induction heating
NL10250
power supply for magnetron
schema cpu
LEMO
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IEC -320 C19 male inlet
Abstract: IEC -320 C14 POWER INLET SCREW MOUNT IEC -320 C19 IEC -320 C14 male inlet IEC 320 CORD iec C19 tab connectors ul 310 pcb ac power MALE PLUG 742w1
Text: 840-2012:QuarkCatalogTempNew 8/27/12 8:32 AM Page 840 TEST & MEASUREMENT 8 AC Receptacles AC Power Outlet IEC 320 — C13/C19 RoHS B RoHS C INTERCONNECT A Multiple Outlet Module IEC 320 — C13 ® 742W-15/04 742W-15/12 742W-15/20 742W-15/28 742W-15/36 Two, three, four, five and six position snap-in type multiple outlets with solder tabs.
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C13/C19
42W-15/04
42W-15/12
42W-15/20
42W-15/28
42W-15/36
42W-15/04*
42W-15/12*
42W-15/20*
42W-15/28*
IEC -320 C19 male inlet
IEC -320 C14 POWER INLET SCREW MOUNT
IEC -320 C19
IEC -320 C14 male inlet
IEC 320 CORD
iec C19
tab connectors ul 310
pcb ac power MALE PLUG
742w1
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k 4110
Abstract: Q62702-P5073
Text: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
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3100y
k 4110
Q62702-P5073
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barcode reader circuit
Abstract: barcode reader opto counter fototransistor led k 4110 transistor k 4110 GEOY6976
Text: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter Lead Pb Free Product - RoHS Compliant SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm
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Untitled
Abstract: No abstract text available
Text: 3 x 5.5mm Rectangular OptopipeTM Optical Light Pipe, 3 Array 515-1000 26.82 [1.056] 21.34 [.840] 18.26 [.719] 6.81 [.268] 5.49 [.216] DIFFUSED FRONT SURFACES 3.00 [.118] 3.18 [.125] 10.16 [.400] 12.17 [.479] 3.94 [.155] 16.31 [.642] 8.08 [.318] 6.86 [.270]
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597-3001-2xx
597-3111-5Pipe
UL94-V0,
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k 4110
Abstract: GEOY6976 Q62702-P5073
Text: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
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3100y
k 4110
GEOY6976
Q62702-P5073
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597-3001-2
Abstract: No abstract text available
Text: 3 x 5.5mm Rectangular Optopipe® Optical Light Pipe, 3 Array 515-1000 Recommended MicroLED SMT LEDs for use with 515-1000 26.82 [1.056] 21.34 [.840] 18.26 [.719] 6.81 [.268] 5.49 [.216] DIFFUSED FRONT SURF ACES 3.00 [.118] 3.18 [.125] 10.16 [.400] 12.17
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597-3001-2xx
597-3111-5xx
597-3121-2xx
597-3211-2xx
597-3211-5xx
597-3301-2xx
597-3301-5xx
597-3401-2xx
597-3401-5xx
597-7701-2xx
597-3001-2
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Untitled
Abstract: No abstract text available
Text: L6566BH Multimode controller for SMPS Datasheet — production data Features • Selectable multimode operation: fixed frequency or quasi-resonant ■ On-board 840 V high voltage startup ■ Advanced light load management ■ Low quiescent current < 3 mA
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L6566BH
SO16N
SO16N
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IC 3130
Abstract: 4110 P525 Q62702-P5250 GEOY6976
Text: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
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L6566BH
Abstract: 28 VOLT 35 AMP smps schematic diagram 2 sc 1020 12 VOLT 100 AMP smps L6566B SMPS SCHEMATIC DIAGRAM 24 v 10 a
Text: L6566BH Multimode controller for SMPS Datasheet — production data Features • Selectable multimode operation: fixed frequency or quasi-resonant ■ On-board 840 V high voltage startup ■ Advanced light load management ■ Low quiescent current < 3 mA
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L6566BH
SO16N
L6566BH
28 VOLT 35 AMP smps
schematic diagram 2 sc 1020
12 VOLT 100 AMP smps
L6566B
SMPS SCHEMATIC DIAGRAM 24 v 10 a
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LD06B-W4F-854
Abstract: LD-2CONN-100 OSRAM white golden dragon
Text: www.osram.com/LED-Systems LINEARlight-DRAGON - LD06A/B Data Sheet Benefits Picture for Datasheet is missing !!! ¾ Compact and powerful LED lightsource ¾ Available in light colours 830, 840, 854 ¾ Easy connection with OSRAM CONNECTsystem Applications ¾
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LD06A/B
LD06B-W4F-854
LD06A-W3F-854
LD06B-W4F-840
LD06B-W4F-830
LD06A-W3F-827
LD06A/B
LD-2CONN-100
OSRAM white golden dragon
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GEO06976
Abstract: Q62702-P5073
Text: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
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OHF00383
GEO06976
GEO06976
Q62702-P5073
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BC547 TRANSISTOR
Abstract: No abstract text available
Text: . Kit Workshop Base with Arduino board is a selection of all the components / parts necessary to participate in an introductory Arduino Workshop. List of Components: • 1 Arduino Board • 1 Straight single line pinhead connectors 2,54 40x1 • 1 Breadboard, 840 tie points
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100nF
100uF
25Vdc
VT90N2
10Kohm
BC547
O92no
BC547 TRANSISTOR
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LED standard
Abstract: No abstract text available
Text: LED - Lamp ELD-840-325 15.11.2007 rev. 02 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 3 mm plastic lens Description Ø4,0 ±0,1 Ø3,0 ±0,1 High-power, high-speed infrared LED in standard 3 mm housing, small package allows compact design, housing without standoff leads
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ELD-840-325
D-12555
LED standard
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IR LED 840 nm
Abstract: No abstract text available
Text: LED - Chip ELC-840-25-1 Preliminary 10.04.2007 rev. 03/06 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 325 280 240 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm,
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ELC-840-25-1
LED-04
D-12555
IR LED 840 nm
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AlGaAs
Abstract: No abstract text available
Text: LED - Chip ELC-840-28-1 Preliminary 10.04.2007 rev. 04/06 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 460 360 300 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm dotted, 25% covered
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ELC-840-28-1
PD-02
EL-840-28-1
D-12555
AlGaAs
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Untitled
Abstract: No abstract text available
Text: LED lamp ELD-840-995 Color Type Technology Case Infrared Flat top AlGaAs/AlGaAs 5 mm plastic Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol Value Unit IF 100 mA IFSM 1000 mA Reverse voltage VR 5 V Power dissipation
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ELD-840-995
D-12555
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Untitled
Abstract: No abstract text available
Text: LED - Lamp ELD-840-525 15.11.2007 rev. 05 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 5 mm plastic lens Description High-power, high-speed infrared LED in standard 5 mm package T1 , housing without standoff leads 9,15 1 5,75 - 0,3 2,54 0,8 - 0,4
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ELD-840-525
D-12555
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ns102
Abstract: D635-15 Samsung SD650-5 650nm 5mw, 9MM knight rider NS102A SD650-5 650nm 5mw, 9MM 650NM laser diode 5mw NM808-30 sniper EPM650-5
Text: NVG, Inc., - Laser Diodes and Laser Diode Modules LASER MODULES LONG LASER DIODES SHORT WAVELENGTHS WAVELENGTHS NVG, Inc. manufactures laser diodes, laser modules and laser products. Visible and infrared, high and low power. Various wavelengths available - 635, 640, 650, 660, 670, 690, 780, 808, 840, 904, 980
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HFZ-307)
ns102
D635-15
Samsung SD650-5 650nm 5mw, 9MM
knight rider
NS102A
SD650-5 650nm 5mw, 9MM
650NM laser diode 5mw
NM808-30
sniper
EPM650-5
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