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    837 MOSFET Search Results

    837 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    837 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    *f6p02

    Abstract: NTMS4700NR2
    Text: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* ID (A) PD (W) 12 6.5 2 NTMD6N02 Max Rating Config. Page No. D 758


    Original     		PDF NTMD2P01 NTMS10P02 NTMS5P02 NTMD6P02 MMSF3P028* NTMD6N02 NTMS4N01 MMDF3N02HD NTMS4503N NTMS4700NR2 *f6p02

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for


    Original     		PDF MRF281SR1 MRF281ZR1

    MRF281Z

    Abstract: motorola j117
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for


    Original     		PDF MRF281SR1 MRF281ZR1 MRF281Z motorola j117

    Ni200

    Abstract: MRF281Z
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for


    Original     		PDF Characteri11 MRF281SR1 MRF281ZR1 Ni200 MRF281Z

    motorola j117

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications at frequencies from 1000 to 2500 MHz. Characterized for operation


    Original     		PDF MRF281SR1 MRF281ZR1 motorola j117

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AMA423P P-Channel 20-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • 2mm x 2mm footprint DFN package • RDS rated at 1.8V Gate-drive VDS (V) -20 PRODUCT SUMMARY rDS(on) (mΩ) 42 @ VGS = -4.5V 57 @ VGS = -2.5V


    Original     		PDF AMA423P DS-AMA423P-2010-rev4

    Untitled

    Abstract: No abstract text available
    Text: DRV8837 www.ti.com SLVSBA4 – JUNE 2012 LOW-VOLTAGE H-BRIDGE IC Check for Samples: DRV8837 FEATURES DESCRIPTION • The DRV8837 provides an integrated motor-driver solution for cameras, consumer products, toys, and other low-voltage or battery-powered motion-control


    Original     		PDF DRV8837 DRV8837

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.055 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC

    Untitled

    Abstract: No abstract text available
    Text: DRV8837 www.ti.com SLVSBA4A – JUNE 2012 – REVISED AUGUST 2012 LOW-VOLTAGE H-BRIDGE IC Check for Samples: DRV8837 FEATURES DESCRIPTION • The DRV8837 provides an integrated motor-driver solution for cameras, consumer products, toys, and other low-voltage or battery-powered motion-control


    Original     		PDF DRV8837 120-nA DRV8837

    ZXMN2A03E6

    Abstract: ZXMN2A03E6TA ZXMN2A03E6TC
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.055 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC ZXMN2A03E6 ZXMN2A03E6TA ZXMN2A03E6TC

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC

    j117 motorola

    Abstract: motorola j117
    Text: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station


    Original     		PDF MRF281/D MRF281SR1 MRF281ZR1 MRF281/D j117 motorola motorola j117

    mosfet 4496

    Abstract: MRF281ZR1 741 datasheet motorola MRF281SR1 motorola 947 rf power 4496 mosfet motorola j117 MRF281Z
    Text: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station


    Original     		PDF MRF281/D MRF281SR1 MRF281ZR1 MRF281SR1 mosfet 4496 MRF281ZR1 741 datasheet motorola motorola 947 rf power 4496 mosfet motorola j117 MRF281Z

    200S

    Abstract: MRF281SR1 MRF281ZR1 mosfet 4496 741 motorola
    Text: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station


    Original     		PDF MRF281/D MRF281SR1 MRF281ZR1 MRF281SR1 200S MRF281ZR1 mosfet 4496 741 motorola

    pioneer mosfet

    Abstract: AVNET Cross Reference MOSFET 818 ln avnet pioneer ic
    Text: - " r r p c i A DISTRIBUTOR AND WORLDWIDE SALES OFFICES AUTHORIZED NORTH AMERICAN DISTRIBUTORS UNITED STATES: ALABAMA Huntsville Future E lectro n ics. 205 830-2322 Hall-Mark Electronics .(205)837-8700


    OCR Scan     		PDF

    IRL2203N equivalent

    Abstract: ap 437 5V voltage regulator namics UCC1837
    Text: UCCI 837 UCC2837 UCC3837 PRELIMINARY FEATURES DESCRIPTION • On Board Charge Pump to Drive External N-MOSFET • Input Voltage as Low as 3V • Duty Ratio Mode Over Current Protection • Extremely Low Dropout Voltage The UCC3837 Linear Regulator Controller includes all the features required for an ex­


    OCR Scan     		PDF UCC2837 UCC3837 UCC3837 100ns 200mA IRL2203N equivalent ap 437 5V voltage regulator namics UCC1837

    UCC1837

    Abstract: No abstract text available
    Text: y U IM IT R O D E UCC1837 UCC2837 UCC3837 PRELIMINARY FEATURES DESCRIPTION • On Board Charge Pump to Drive External N-MOSFET • Input Voltage as Low as 3V • Duty Ratio Mode Over Current Protection • Extremely Low Dropout Voltage The UCC3837 Linear Regulator Controller includes all the features required for an ex­


    OCR Scan     		PDF UCC1837 UCC2837 UCC3837 UCC3837 100ns 200mA 001b24a UCC1837

    Untitled

    Abstract: No abstract text available
    Text: IRLS640A Advanced Power MOSFET FEATURES BVdss = 200 V • Logic Level Gate Drive ■ Avalanche Rugged Technology RDS on = 0.18 ■ Rugged Gate Oxide Technology In = 9.8 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area


    OCR Scan     		PDF IRLS640A O-220F

    250M

    Abstract: JS-50
    Text: IRLR120/121 IRLU120/121 N-CHANNEL LOGIC LEVEL MOSFET FEATURES • • • • • • • • D-PAK Lower R d s ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area


    OCR Scan     		PDF IRLR120/121 IRLU120/121 IRLR120/U120 IRLR121/U121 IRLR120/12 7Tb4142 DEcI37fi 250M JS-50

    IRFIP450

    Abstract: CD 834 AN972
    Text: PD-9.645A International ü * l Rectifier IRFIP450 HEXFET Power MOSFET • • • • • • • Isolated Package DC Package !solation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm Sink to Lead Creepage Dist.= 6.0mm Dynamic dv/dt Rating


    OCR Scan     		PDF IRFIP450 O-247 UL1012. AN972 150KQ CD 834

    837 mosfet

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30KM-06 HIGH-SPEED SWITCHING USE FS30KM-06 OUTLINE DRAWING Dimensions in mm • 10V D R IV E • V dss . • TDS ON (M AX ) .


    OCR Scan     		PDF FS30KM-06 O-220FN 837 mosfet

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS UC1706 UC2706 UC3706 U N IT R G D E Dual Output Driver DESCRIPTION FEATURES The UC1706 family of output drivers are made with a high-speed Schottky process to interlace between low-level control functions and highpower switching devices - particularly power MOSFET’s. These devices


    OCR Scan     		PDF UC1706 UC2706 UC3706 UC1706 40nsec 1000pF UC3611