IBM0144401M
Abstract: IBM014440M1M IBM014440P1M
Text: IBM0144401M x 410/10, 5.0V, QUAD CAS. IBM014440P1M x 410/10, 3.3V, QUAD CAS, LP, SR. IBM014440M1M x 410/10, 5.0V, QUAD CAS, LP, SR. IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation
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IBM0144401M
IBM014440P1M
IBM014440M1M
IBM014440
IBM014440M
IBM014440P
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IBM0144401M
Abstract: IBM014440M1M IBM014440P1M
Text: IBM0144401M x 410/10, 5.0V, QUAD CAS. IBM014440P1M x 410/10, 3.3V, QUAD CAS, LP, SR. IBM014440M1M x 410/10, 5.0V, QUAD CAS, LP, SR. IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation
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Original
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PDF
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IBM0144401M
IBM014440P1M
IBM014440M1M
IBM014440
IBM014440M
IBM014440P
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Untitled
Abstract: No abstract text available
Text: IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version) - 1.0 mA (IP version)
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OCR Scan
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IBM014440
IBM014440M
IBM014440P
DDD1777
82F6673
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Untitled
Abstract: No abstract text available
Text: IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation - Active max - 95 m A / 8 0 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version)
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OCR Scan
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PDF
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IBM014440
IBM014440M
IBM014440P
SOJ-26/24s
82F6673
0QG3G32
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Untitled
Abstract: No abstract text available
Text: IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version) - 1.0 mA (LP version)
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OCR Scan
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PDF
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IBM014440
IBM014440M
IBM014440P
IBM014440P
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