2SB865
Abstract: No abstract text available
Text: Ordering number:828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications Package Dimensions • Relay drivers, hammer drivers, lamp drivers, motor drivers. unit:mm 2006A [2SB865/2SD1153] Features · High DC current gain 4000 or more .
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2SB865/2SD1153
2SB865/2SD1153]
SC-51
2SB865
2SB865
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transistor 828
Abstract: iC 828 Transistor transistor 468 NPN Transistor TO92 JC547 828 npn 828 TRANSISTOR equivalent BCY87 to-71 transistor TO-92
Text: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) NPN COMPL. PAGE JC556B TO-92 65 100 500 220 475 100 JC546B 796 JC557 TO-92 45 100 500 125 800 100
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JC556B
JC546B
JC557
JC547
JC557A
JC547A
JC557B
JC547B
JC557C
JC547C
transistor 828
iC 828 Transistor
transistor 468
NPN Transistor TO92
JC547
828 npn
828 TRANSISTOR equivalent
BCY87
to-71 transistor
TO-92
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2SB865
Abstract: 2SD1153 ITR08508 ITR08509 ITR08510
Text: Ordering number:ENN828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications Package Dimensions • Relay drivers, hammer drivers, lamp drivers, motor drivers. unit:mm 2006B [2SB865/2SD1153] Features 6.0
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ENN828D
2SB865/2SD1153
2006B
2SB865/2SD1153]
2SB865
2SB865
2SD1153
ITR08508
ITR08509
ITR08510
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Untitled
Abstract: No abstract text available
Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol
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MMBT2131T1
MMBT2132T1/T3)
AN569)
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SF 829 B
Abstract: SF829 SF819 SF827 sf 829 d SF126 SF826 sf829c SF816 SF 827 d
Text: FUNKAMATEUR-Bauelementemformation Silizium-npn-Transistoren in Epitaxie-Planar-Technologie SF 826 SF827 SF 828 SF 829 Hersteller: V EB Halbleiterwerk Frankfurt Oder TG L 43386 Kurzcharakteristik Grenzwerte (im Betriebstemperaturbereich) Parameter (Bedingungen)
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SF827
SF829
SF82B
SF82S
SF 829 B
SF819
sf 829 d
SF126
SF826
sf829c
SF816
SF 827 d
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bd 825 10
Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
Text: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,
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Q62702-D1135
Q62702-D149
Q62702-D1213
Q62702-D60
Q62702-D1305
Q62702-D1306
Q62702-D1113
Q62702-D1309
Q62702-D1310
Q62702-D1311
bd 825 10
SIEMENS BD 827-10
D1305
ti 829
IC 8256
bd 827-10
d1310
BD829
D1113
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828BD
Abstract: BD NPN transistors BD 826 NPN
Text: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60
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00142bQ
828BD
BD NPN transistors
BD 826 NPN
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.W07B
Abstract: W07b 722G 2SB828 2SB82B 2SD1064 as1012
Text: Ordering number: EN 722G 2SB828/2SD1064 N0.722G PNP/NPN Epitaxial P lan ar Silicon Transistors 50V/12A Switching Applications A p p licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F e a tu re s
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2SB828/2SD1064
0V/12A
2SB828
2SD1064
.W07B
W07b
722G
2SB82B
as1012
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bo 828
Abstract: 828 diode K8111 K8180
Text: OPTEK Product Bulletin OPB828 May 1993 Slotted Optical Switches Types OPB828A, OPB828B, OPB828C, OPB828D Features Absolute Maximum Ratings T a = 25 ° C u n le ss otherwise noted • • • • Storage and Operating Temperature R a n g e . -40°C to +85°C
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OPB828
OPB828A,
OPB828B,
OPB828C,
OPB828D
bo 828
828 diode
K8111
K8180
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828 diode
Abstract: HA20
Text: OPTEK Product Bulletin OPB828 July 1996 Slotted Optical Switches Types OPB828A, OPB828B, OPB828C, OPB828D Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Printed circuit board mounting • 0.125‘ (3.18 mm) wide slot Storage and Operating Temperature R a n g e . -40° C to +85° C
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OPB828
OPB828A,
OPB828B,
OPB828C,
OPB828D
828 diode
HA20
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2SD1556
Abstract: 2SD1556 equivalent
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE -2SD1556 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. Unit in mm FEATURES: 1 5 .S ¿ a 5 , 0 3 . 6 i a 3 . High Voltage 3.o±a3 :V c b o =1500V . Low Saturation Voltage: VcE sat =5V(Max.) (Ic=5A, 1b =1A) . High Speed :tf = l,Ojjs(Max.)
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-2SD1556
200mA,
2SD1556
2SD1556
2SD1556 equivalent
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2SC1891
Abstract: No abstract text available
Text: 2SC5028 SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm POW ER AM PLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. • • • • Low Collector Saturation Voltage : v C E (s a t)= -° -5V (Max.) (Ic = -1 A ) High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)
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2SC5028
500ns
2SC1891
100mA
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C 828 Transistor
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20074 14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP
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Emitter-Ba01
C 828 Transistor
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C 828 Transistor
Abstract: B 828 transistor transistor c 828 transistor 828 d marking code dpak transistor C 828 Transistor NPN LC marking code transistor
Text: Central CJD44H11 NPN CJD45H11 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power
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CJD44H11
CJD45H11
CJD44H11,
CP219
26-September
C 828 Transistor
B 828 transistor
transistor c 828
transistor 828
d marking code dpak transistor
C 828 Transistor NPN
LC marking code transistor
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C 828 Transistor
Abstract: marking code 20A iC 828 Transistor LB1200
Text: Central CZT5338 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufac tured by the epitaxial planar process, epoxy mold ed in a surface mount package, designed for
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CZT5338
OT-223
CP219
26-September
OT-223
C 828 Transistor
marking code 20A
iC 828 Transistor
LB1200
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Untitled
Abstract: No abstract text available
Text: MJE13004 MJE13005 S G S -T H O M S O N ^□ gytemKgir^MOOs HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon multiepitaxial me sa NPN transistors in JedecTO-220 plastic package particularly intended for switch-mode applications. TO-220
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MJE13004
MJE13005
MJE13004/13005
JedecTO-220
O-220
MJE13004-MJE13005
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2SC2121
Abstract: cannon terminal g25a AC42C
Text: 2 5 2 / 'J D > N P N = » E « y . - y - J B h > ; ^ SILICON NPN TRIPLE DIFFUSED M ESA TRANSISTOR O » » E E * 4 S’ T o High Voltage Switching Applications •  i Œ T t y?m ; v < S Î n M Œ ^ sÎS^> ; Unit In C! E S = 7 5 0 V v CE sat = 5v (Max.) at Iq= 4A , Ijj=1A
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2sc2121
2SC2121
cannon terminal
g25a
AC42C
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PDF
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PSA44
Abstract: PSA-45 B 828 transistor PSA45
Text: Philips Semiconductors Product specification NPN high-voltage transistors MPSA44; MPSA45 FEATURES PINNING • Low current max. 300 mA PIN • High voltage (max. 400 V). 1 collector 2 base 3 em itter APPLICATIONS DESCRIPTION • Telecom m unication applications.
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MPSA44;
MPSA45
PSA44
PSA45
PSA45
er750
PSA-45
B 828 transistor
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SOT23 marking 828
Abstract: 46 marking
Text: SIEMENS PNP Silicon Darlington Transistors • • • • BCV 26 BCV 46 For general A F applications High collector current High current gain Complementary types: B C V 27, B C V 47 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3
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Q62702-C1493
Q62702-C1475
OT-23
BCV26
BCV46
SOT23 marking 828
46 marking
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PDF
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Siren Sound Generator circuit diagram
Abstract: internal circuit of UM3561 siren police diagram UM3561A circuit diagram of police siren UM3561 3 machine gun sound generator police siren block diagram Siren Sound Generator 5 police Siren Sound
Text: UM3561A Three Siren Sound Generator Features A magnetic speaker can be driven by connecting an NPN transistor Power on reset • Four sounds can be selected ■ Typical 3V operating voltage * RC oscillator with an external resistor General Description The UM3561A is a low-cost, low-power CMOS LSI designed
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UM3561A
UM3561A
200Ko
240Kn
2SC9013or8050
2SC9013or8050
1780u
UM3561
Siren Sound Generator circuit diagram
internal circuit of UM3561
siren police diagram
circuit diagram of police siren
3 machine gun sound generator
police siren block diagram
Siren Sound Generator 5
police Siren Sound
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PDF
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transistors BC 543
Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825
Text: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,
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Q62702-D1303
Q62702-D13Q4
Q62702-D1179
Q62702-D1257
Q62702-D1307
Q62702-D1308
Q62702-D61
Q62702-D1312
Q62702-D1313
Q62702-D1238
transistors BC 543
BD 104 NPN
BC827
BD 104
transistors d 826
bc 734
82s83
BC 828
BD 541
bc825
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TIP42A
Abstract: TIP41 TIP42 TIP42B TIP42 amplifier TIP42 applications w826 ibm 1981 a-3131 A3131
Text: TIP42;A TIP42B;C SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended fo r use in general ou tput stages o f am plifier circuits and switching applications. NPN complements are TIP41 series. Q UICK REFERENCE D A T A
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TIP42
TIP42B
TIP41
O-220.
TIP42A
TIP42 amplifier
TIP42 applications
w826
ibm 1981
a-3131
A3131
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Untitled
Abstract: No abstract text available
Text: TIP42;A TIP42B;C _ J V SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. NPN complements are TIP41 series.
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TIP42
TIP42B
TIP41
TIP42
Dimen1981
bb53T
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PDF
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2ND55
Abstract: 2N828 2n4933 *423 pnp 2N2482 2n711 2N3733 2N3866 2N401 MT72j
Text: discrete devices J 1311IETUI1 sem iconductors Semitronics Corp. silicon transistors UHF/VHF power transistors J 7 - Of NPN type « Rated Breakdown VottaiM V V V CB CB EB VCE 65 6b :^N3e32] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28 28 28 : 2N3866 f ?N3S24
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2H3375
S2N35
2N3733
2N3866
JN3924
2N392B
2N401Ã
T0-60
JN4040
2N4041
2ND55
2N828
2n4933
*423 pnp
2N2482
2n711
2N401
MT72j
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