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    ITT Interconnect Solutions CA3100E18-23SB05-15

    ITT CAB 10C 10#16 SKT RECP WALL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CA3100E18-23SB05-15
    • 1 $263.02
    • 10 $263.02
    • 100 $263.02
    • 1000 $263.02
    • 10000 $263.02
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    PEI Genesis CA3100E18-23SB05-15 530 1
    • 1 $131.51
    • 10 $98.63
    • 100 $60.7
    • 1000 $60.7
    • 10000 $60.7
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    823SB05 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    st smd marking code VU

    Abstract: SMD TRANSISTOR MARKING 3B SMD HF transistor AEB01100 AED01098 AED010B7 AEP01099 AET01085 TLE4263G MARKING CODE SMD IC
    Text: 823Sb05 DMfaSBB 115 SIEMENS 5-V Low -D rop V o ltage R eg u lato r TL E 4263 G P relim inary Data Bipolar 1C Features • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Overtemperature protection


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    fl235b05 Q67000-A9095 P-DSO-20-6 P-DSO-20-6 2I20X 35x45" st smd marking code VU SMD TRANSISTOR MARKING 3B SMD HF transistor AEB01100 AED01098 AED010B7 AEP01099 AET01085 TLE4263G MARKING CODE SMD IC PDF

    Q67006-A9171

    Abstract: hall current sensor 3A 4921-3U AEP01694 TLE4921-3U siemens magnetic sensors Siemens Hall AEA01259 AED01707 AED01709
    Text: SIEM ENS Dynamic Differential Hall Effect Sensor 1C TLE4921-3U Bipolar IC Features • • • • • • • • • • • • • • • Advanced performance High sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption South and north pole pre-induction possible


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    TLE4921-3U 4921-3U Q67006-A9171 23SbQS 23Sb0S 4921-3U hall current sensor 3A AEP01694 TLE4921-3U siemens magnetic sensors Siemens Hall AEA01259 AED01707 AED01709 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3 V 2M x 64-Bit EDO-DRAM Module 3.3 V 2M x 72-Bit EDO-DRAM Module 168 pin unbuffered DIMM Module with serial presence detect HYM 64V2005GU-50/-60 HYM 72V2005GU-50/-60 Advanced Inform ation • 168 Pin JEDEC Standard, unbuffered 8 Byte Dual In-Line Memory Module


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    64-Bit 72-Bit 64V2005GU-50/-60 72V2005GU-50/-60 B235bD5 012327b V2005G U-50/-60 L-DIM-168-11 823Sb05 PDF

    nf950

    Abstract: transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF
    Text: 25C D • 523SbQS QQQMS3‘i 4 Wi SI ZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 2 36 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,


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    023SbQS Q62702-F553 nf950 transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF PDF

    DIODE S45

    Abstract: No abstract text available
    Text: ÖÖD D • ÔE3SbQ5 0015074 ö H S I E 6 88D 15074 D BUZ 361 SIEMENS AKTIENûESELLSCHAF Main ratings N-Channel a 800 V Drain-source voltage Vos = 2,9 A Continuous drain current h Drain-source on-resistance ^DS on 4,5 a Description FREDET with fast-recovery reverse diode, N-channel, enhancement mode


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