ceramic capacitor, .1uF 50v
Abstract: SBS c11 battery smart phone jumper setting
Text: 19-1546; Rev 0; 9/99 MAX1667 Evaluation Kit Component Suppliers SUPPLIER PHONE FAX AVX 803-946-0690 803-626-3123 Central Semiconductor 516-435-1110 516-435-1824 Coilcraft 847-639-6400 847-639-1469 Dale 402-564-3131 402-563-6418 Fairchild 408-822-2000 408-822-2102
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MAX1667
MAX1667
ceramic capacitor, .1uF 50v
SBS c11 battery
smart phone jumper setting
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24Vdc rectifier diode
Abstract: No abstract text available
Text: RS ITEM NO 209-822 SIGNO ITEM NO MGGM24 LED/Multiled Multiled Optimum voltage V 24Vdc Intensity Mounting Size T1 3/4 Rectifier - Reverse Voltage Mounting Finish Midget Groove AC current - Protection Protection Diode DC current 15mA Mount Holder Midget Groove
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MGGM24
24Vdc
65mcd
24Vdc rectifier diode
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11p06
Abstract: DIP20 PCA84C122 PCA84C222 SDIP24 SO20 SO24 6k201 84c122a philips RC5 protocol
Text: INTEGRATED CIRCUITS DATA SHEET PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductors 1995 May 01 Philips Semiconductors
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PCA84C122;
11p06
DIP20
PCA84C122
PCA84C222
SDIP24
SO20
SO24
6k201
84c122a
philips RC5 protocol
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Data Handbook IC14
Abstract: 822 ic MAKING RC-5 ir remote control DIP20 PCA84C122 PCA84C222 SDIP24 SO20 SO24 MCD251
Text: INTEGRATED CIRCUITS DATA SHEET PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductors 1995 May 01 Philips Semiconductors
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PCA84C122;
SCD39
453041/1500/03/pp24
Data Handbook IC14
822 ic MAKING
RC-5 ir remote control
DIP20
PCA84C122
PCA84C222
SDIP24
SO20
SO24
MCD251
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49 mhz remote control transmitter circuit
Abstract: Data Handbook IC14 PCA84C122 822 ic MAKING IR REMOTE CONTROL IC RC-5 ic remote control REMOTE CONTROL IC TI 783 DIP20 PCA84C222
Text: INTEGRATED CIRCUITS DATA SHEET PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductors 1995 May 01 Philips Semiconductors
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PCA84C122;
SCD39
453041/1500/03/pp24
49 mhz remote control transmitter circuit
Data Handbook IC14
PCA84C122
822 ic MAKING
IR REMOTE CONTROL IC
RC-5 ic remote control
REMOTE CONTROL IC
TI 783
DIP20
PCA84C222
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ON 823
Abstract: 822 diode MOSFET 400V TO-220 LND820 rd1004 823 diode
Text: DATA SHEET LND820/821/822/823 POWER MOSFET GENERAL DESCRIPTION The LND820 series provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred
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LND820/821/822/823
LND820
O-220
50V-500V
O-220
di/dt50
TJ150
ON 823
822 diode
MOSFET 400V TO-220
rd1004
823 diode
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C20 diode, TO
Abstract: 822 diode c20 diode 3108 DIODE ZC821 ZC823 Silicon Tuner ZC825 ZC826 ZC820
Text: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ZC820 SERIES ZC820 SERIES ISSUE 2 MARCH 94 DIODE PIN CONNECTION 1 200 1 CATHODE 2 2 ANODE E-Line TO92 Compatible Diode Capacitance pF 100 ABSOLUTE MAXIMUM RATINGS. 826 825 10 824 823 822 821 820 10 Reverse Voltage (Volts)
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ZC820
50MHz
ZC821
ZC822
ZC823
ZC824
ZC825
ZC826
C20 diode, TO
822 diode
c20 diode
3108 DIODE
ZC821
ZC823
Silicon Tuner
ZC825
ZC826
ZC820
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C-108
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : PART NO. : █ Package ▓ CDT2-822-004 8224-7VGT/C108/TR2-24 ECN : Dimension: Notes: 1.All dimensions are in millimeters, tolerance is 0.25mm except being specified 2.Lead spacing is measured where the lead emerge from the package
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CDT2-822-004
8224-7VGT/C108/TR2-24
8224-7VGT/C108
30min
C-108
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Untitled
Abstract: No abstract text available
Text: MEO 550-02 DA Fast Recovery Epitaxial Diode FRED Module 3 VRRM V V 200 200 1 3 Type 1 MEO 550-02DA Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 822 582 2880
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550-02DA
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8224-10VRT
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : PART NO. : █ Package 8224-10VRT/TR4-9 CDT4-822-001 ECN : Dimensions: θ ▓ Notes: 1.All dimensions are in millimeters, tolerance is 0.25mm except being specified 2.Lead spacing is measured where the lead emerge from the package
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8224-10VRT/TR4-9
CDT4-822-001
8224-10VRT
30min
8224-10VRT
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transistor c109
Abstract: c109 005
Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : PART NO. : █ Package ▓ CDT2-822-005 8224-7VRT/C109/TR2-24 ECN : Dimension: Notes: 1.All dimensions are in millimeters, tolerance is 0.25mm except being specified 2.Lead spacing is measured where the lead emerge from the package
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CDT2-822-005
8224-7VRT/C109/TR2-24
8224-7VRT/C109
30min
transistor c109
c109 005
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JRF820
Abstract: F820R
Text: 2 3 H A R R IS IR F 820/ 821/ 822/823 IR F 820 R /8 2 1R /822 R /823 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features Package T O -2 2 0 A B TOP VIEW • 2 .2 and 2.5A , 4 5 0 V - 5 0 0 V • rD S ° n = 3.on and 4 .0 ÎÎ DRAIN
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IRF820,
IRF821,
IRF822,
IRF823
IRF820R,
IRF821R,
IRF822R
IRF823R
JRF820
F820R
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sot234 jt
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductor PHILIPS 7110fl2b 006^077 TOT 1995 May 01
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PCA84C122;
7110fl2b
711DflSb
sot234 jt
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sot234 jt
Abstract: PCA84C MCD251
Text: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 1995 May 01 PHILIPS Philips Semiconductors Product specification
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PCA84C122;
84CXXX
84CXXX
SCD39
/1500/03/pp24
sot234 jt
PCA84C
MCD251
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IRF820
Abstract: IRF822 irf821 IRF820.821 k 55 d 3j3 IRF820 SAMSUNG ON 823 IRF820..821 IRF420 IRF422
Text: ^SO IRF820/821/822/823 FEATURES GD17311 Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 7 cìb414E • •
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IRF820/821/822/823
IRF820
IRF821
IRF822
IRF823
O-220
7Tb414S
QG1731L,
IRF820/821/822/823
IRF820.821
k 55 d 3j3
IRF820 SAMSUNG
ON 823
IRF820..821
IRF420
IRF422
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sod-80 with blue band
Abstract: blue cathode melf F-822 F822 Current Regulator Diodes F-701 F-101 f103 semiconductor F-202 F-102
Text: F-101 I nternational thru S em ico nducto r , I n c . F-822 SURFACE MOUNT CURRENT REGULATOR DIODES MAXIMUM RATINGS DESIGN DATA G S Power Dissipation 400 mW Therm al Resistance 150 °C /W Max Rated Voltage 100 Volts G1 C ASE: Hermetically sealed glass with solder contact tabs at
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F-101
F-822
F-101L
F-101
F-301
F-501
F-701
F-102
F-152
F-202
sod-80 with blue band
blue cathode melf
F-822
F822
Current Regulator Diodes
f103 semiconductor
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Philips IC14
Abstract: 84cxxx S024L DIL20 PCA84C122 PCA84C122A sot146e philips remote control ic 14 pin philips application note 422 Data Handbook IC14
Text: NAPC/PHILIPS SEMICOND b^E T> • bbSB'ìSM 00^321*5 Ô3b « S I C 3 Preliminary specification Philips Semiconductors 8-bit microcontrollers for remote control transmitters PCA84C122; 222; 422; 622; 822 CONTENTS 1 FEATURES 1 FEATURES • 84CXXX CPU 2 GENERAL DESCRIPTION
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0QT3245
PCA84C122;
84CXXX
Philips IC14
S024L
DIL20
PCA84C122
PCA84C122A
sot146e
philips remote control ic 14 pin
philips application note 422
Data Handbook IC14
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IRF820
Abstract: IRF820.821 IRF822
Text: N-CHANNEL POWER MOSFETS IRF820/821/822/823 FEATURES • Low er R ds <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF820/821/822/823
IRF820
IRF821
IRF822
IRF823
IRF820.821
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1N6620
Abstract: 1N6621
Text: MicrojsemiCorp. 1IU 6620U S th ru 1N 662SU S f Santa Ana 2830 S. Fairview Street, Santa Ana, CA 92704 714 979-822 0 • (714) 557-5989 Fax Features • • • • • • • AXIAL AND SURFACE MOUNT CONFIGURATIONS HIGH VOLTAGE WITH ULTRA FAST RECOVERY TIME
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6620U
662SU
MIL-S-19500/585
1N6620
1N6621
1N6622
1N6623
1N6624
1N6625
OPERATIN25
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RC-5 ir remote control
Abstract: DIL20 PCA84C122 MCD25 84C122 SDIL24 MCD251
Text: P hilip s S em iconductors P relim inary spe cifica tion 8-bit microcontrollers for remote control transmitters • PCA84C122; 222; 422; 622; 822 CONTENTS 1 FEATURES 1 FEATURES • 84CXXX CPU 2 GENERAL DESCRIPTION • ROM, RAM and I/O are device dependent,
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84CXXX
711002b
RC-5 ir remote control
DIL20
PCA84C122
MCD25
84C122
SDIL24
MCD251
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F-301
Abstract: F-501 blue cathode melf f123 F-272 f202 F-202 F-452 F-701 f101
Text: F-101 I n ter n a tio n a l thru S e m ic o n d u c to r , I n c . F-822 SURFACE MOUNT CURRENT REGULATOR DIODES MAXIMUM RATINGS Power Dissipation 400 mW Therm al Resistance 150 °C /W Max Rated Voltage 100 Volts DESIGN DATA G CASE: Hermetically sealed glass
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PDF
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F-101
F-822
130ff
F-101L
F-101
F-301
F-501
F-701
F-102
F-152
blue cathode melf
f123
F-272
f202
F-202
F-452
f101
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IRF820
Abstract: IRF822
Text: N-CHANNEL POWER MOSFETS IRF820/821/822/823 FEATURES • • • • • • • TO-220 Lower R d s <o n Improved inductive ruggedness Fast sw itching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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IRF820/821/822/823
O-220
IRF820
IRF821
IRF822
IRF823
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samsung 822
Abstract: IRFS820 N 821 Diode IRFS821 IRFS822 IRFS823 GG173
Text: SAMSUNG ELECTRONICS INC b?E ]> • 7=^4142 001737^ bib I suste N-CHANNEL POWER MOSFETS IRFS820/821/822/823 FEATURES TO-220F • Lower R ds ON • Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance
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IRFS820/821/822/823
to-220f
IRFS820/821Z822/823
IRFS820
IRFS821
IRFS822
IRFS823
samsung 822
N 821 Diode
GG173
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d773
Abstract: diode sy 710 sy 710 diode
Text: T2 UNITRODE CORP 9347963 Ï F | c]347i:ib3 □ OlOVL.fl 7 | ~ 92D UNITRODE CORP 10768 D r POWER MOSFET TRANSISTORS t S 500 Volt, 3.0 Ohm N-Channel UFN 822 UFN823 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling
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UFN823
d773
diode sy 710
sy 710 diode
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