DOMINO
Abstract: DMN-8100 DMN-8150 compression mpeg 1 layer 2 mpeg4
Text: DoMiNo PC Peripheral Product Family DMN-8100/8150 OVERVIEW The LSI Logic DoMiNo ™ network media processor is the industry’s first programmable, single-chip, multi-stream, multi-format DV and MPEG audio/video system codec (encoder/decoder) architecture. This powerful and flexible architecture
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DMN-8100/8150)
I20101
DOMINO
DMN-8100
DMN-8150
compression mpeg 1 layer 2
mpeg4
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2SK1836
Abstract: 2SK1837 K1836 K1837 DSA003639
Text: 2SK1836, 2SK1837 Silicon N-Channel MOS FET ADE-208-1326 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
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2SK1836,
2SK1837
ADE-208-1326
K1836
K1837
2SK1836
2SK1837
K1836
K1837
DSA003639
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gaas wafer
Abstract: k-band infineon phased array radar
Text: GaAs Components Introduction 1 Introduction Since 1975 Infineon Technologies former Siemens Semiconductors has been engaged in research and development of III-V semiconductor components and circuits. The world’s first commercially available GaAs MMIC was created by Infineon Technologies
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Untitled
Abstract: No abstract text available
Text: Code Nr. Page Nr. 8000 8002 8003 8004 8005 8006 8007 10/08 8008 8009 8010 8013 8014 8016 8021 8022 8023 Email: pada@pada.it Web: www.pada.it 18 37 37 38 39 39 39 75 19 45 44 43 8092 8104 8111 8112 8113 8114 8115 8116 8117 8119 8120 8121 8123 8124 Code Nr. Page Nr.
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PTFA081501E
Abstract: BCP56 LM7805 PTFA081501F R-163
Text: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for CDMA and
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PTFA081501E
PTFA081501F
PTFA081501E
PTFA081501F
150-watt,
CDMA2000
BCP56
LM7805
R-163
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Untitled
Abstract: No abstract text available
Text: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for CDMA and
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PTFA081501E
PTFA081501F
150-watt,
CDMA2000
PTFA081501F*
IS-95
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2SK1836
Abstract: 2SK1837 K1836 K1837
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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NEC k 3654
Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
NEC k 3654
gl 7445
nec k 813
nec 8725
gm 8562
5942
A 7601 0549
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mobility radeon 9000
Abstract: RADEON 9000 CY8C42XXX CY7C63800 psoc projects CY8C25-26xxx psoc example projects acer travelmate CY8C25xxx radeon mobility 9000
Text: Release Notes srn015 PSoC Designer Version 4.3 Beta Release Release Date: May 10, 2006 Thank you for your interest in PSoC Designer version 4.3. The information in this document lists installation requirements and describes software updates and changes.
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srn015
1024x768
1280x1024
162nd
srn014
mobility radeon 9000
RADEON 9000
CY8C42XXX
CY7C63800
psoc projects
CY8C25-26xxx
psoc example projects
acer travelmate
CY8C25xxx
radeon mobility 9000
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nec k 813
Abstract: NE850R599A nec 8725
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SD 4206
Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
2SD 4206
str 5707
ky 201 thyristor
scr ky 202
2SD 4206 npn
gi 9444 diode
TRANSISTOR SMD 9014
2SD 5703
STR 6757
TRANSISTOR SMD DK QC
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TRANSISTOR SMD 613
Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
TRANSISTOR SMD 613
TRANSISTOR SMD DK QC
transistor SMD DK -RN
Sanken Schottky Diode Mi 15
spx 3955
SANKEN power supply
diode zener smd sg 64
transistor SMD DK qs
301 miniature smd transistor
KY smd transistor
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Semicon volume 1
Abstract: AWM 2851 VW-1 AWM 2835 cable
Text: Industrial Cable S ERV IN G IN DU STR I AL , SP ECI ALT Y AN D COMMERCI AL AP P LI CATI O N S APRIL 2015 What’s New? Industrial Serving Industrial, Specialty and Commercial Applications GENFREE II LOW-SMOKE, ZERO-HALOGEN CABLE S This catalog contains indepth information on the
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INS-0043-R0415
Semicon volume 1
AWM 2851 VW-1
AWM 2835 cable
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kaschke 093
Abstract: kaschke 093 266 kaschke 093 502 Mn-Zn Ferrites toroidal calculation FERRITE TOROIDAL CORE DATA 07 K250 core k2004 kaschke 071 transistor K2500
Text: Diese Broschüre bietet einen Überblick über Ferritringkerne unserer umfangreichen Produktpalette. Wir können keine Garantie dafür übernehmen, daß die in diesem Heft enthaltenen Spezifikationen, Anwendungen und Verfahren stets frei von Rechten Dritter sind.
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K2006
K4000
kaschke 093
kaschke 093 266
kaschke 093 502
Mn-Zn Ferrites
toroidal calculation
FERRITE TOROIDAL CORE DATA
07 K250
core k2004
kaschke 071
transistor K2500
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R400EX
Abstract: pc motherboard 8148 ibm RadiSys epc-3 Phoenix NuBIOS RadiSys exm-mx RadiSys epc-5 RADISYS R400EX Phoenix BIOS specification intel motherboard display problem repairing epc-5a
Text: EPC -5A Hardware & Software Reference Manual RadiSys Corporation 5445 NE Dawson Creek Drive Hillsboro, Oregon 97124 Phone: 503 615-1100 Fax: (503) 615-1150 http://www.radisys.com 07-0870-01
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AT8150
Abstract: AT-8150 M/AT8150
Text: ATF-45101 AT-8150 2-8 GHz Medium Power Gallium Arsenide FET What H EW LETT mL'fíM PACKARD 100 mil Flange Package Features High Output Power: 29.0 dBm typical Pi dB at 4 GHz High Gain at 1 dB Compression: 10.0 dB typical Gi dB at 4 GHz High Power Efficiency:
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ATF-45101
AT-8150)
AT8150
AT-8150
M/AT8150
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infineon radar
Abstract: infineon phased array radar
Text: GaAs Components Infineon tsjcKnti'og '«s Introduction 1 Introduction Since 1975 Infineon Technologies former Siemens Semiconductors has been engaged in research and development ot lll-V semiconductor components and circuits. The world’s first commercially available GaAs MMIC was created by Infineon Technologies
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T0002
Abstract: WF-1024K8-150I WF-1024K8-150M
Text: W W h ite Technology, Inc. MEMORY PRODUCTS W F -1 0 2 4 K 8 -1 5 0 1 Megabyte x 8 Flash PROM Memory Module ADVANCE INFORMATION SUBJECT TO CHANGE FEATURES • Flash Chip Erase * 1 Second Page Erase * 8 Pages Total ■ Fast Programming * 10uSec Typical Byte
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WF-1024K8-150
WF-1024K8-150
10uSec
150nSec
WF-1024K8-150I
WF-1024K8-150M
T0002
WF-1024K8-150I
WF-1024K8-150M
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MSA 370
Abstract: IAM-82008 MSA-0835
Text: S ilicon M onolithic Integrated Circuits G en eral P u rp o se Am plifier» Typical Specifications at +25°C Case Temperature. GP@ 0.1GHz (dB) GP@ 1GHz (dB) N F@ 1 GHz (dB) PldB Min. Supply Voltage*8! Device Voltage!*! (dBm) (Vcc) (Vd) Device Current!*]
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MSA-0100
MSA-0200
MSA-0300
MSA-0170
MSA-0270
MSA-0370
MSA-0135
MSA-0136
MSA-0235
MSA-0236
MSA 370
IAM-82008
MSA-0835
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Untitled
Abstract: No abstract text available
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
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bcb25
Abstract: BCB30 2X40 Scans-048 bcb34 Electron Device Mfg Corp
Text: X-RAY TUBES, PORTABLE X-RAY UNITS j l Electron Device Mfg Corp X-RAY T U B E S F O R I N S P E C T I O N O F MATERIALS ON IN D U ST R IA L SCALE Type Focal S pot D im ensions, mm R ated V oltage, kV M axim um A node C u rre n t, mA 0,2BnK7-100 0.8 to 1.2
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2BnK7-100
3BFIK8-100
ni-60
bcb25
BCB30
2X40
Scans-048
bcb34
Electron Device Mfg Corp
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uPB8289
Abstract: No abstract text available
Text: NEC mP B 8 2 8 9 BUS ARBITER NEC Electronics Inc. Description Pin Configuration The /jPB8289 bus a rb iter is used w ith the /¿PB8288 bus con tro ller to interface 8086 and 8088 m icroprocessors to a m u ltim a s te r system bus. The jiPB8289 co n tro ls
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uPB8289
uPB8288
jiPB8289
PB8288
fiPB8289
PB8289
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TCP 8126
Abstract: No abstract text available
Text: M ay 1992 Edition 1.1 FUJITSU DATA SHEET M B 9 8 A 8 0 9 2 X - / 8 1 0 2 x - / 8 1 1 2 x - / 8 1 2 2 x -2 5 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 512K / 1 M / 2 M / 4M -BYTE The Fujitsu MB98A8092x, MB98A8102x, MB98A8112x and MB98A8122x are
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MB98A8092x,
MB98A8102x,
MB98A8112x
MB98A8122x
68-pin
16-bit
374T75b
MB98A8092X-25
MB98A8102X-25
MB98A8112X-25
TCP 8126
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TFK U 3212 M
Abstract: TFK U 3212 telefunken rc 890 cd LIN 5642 G tfk 623 ta 8659 cn str f 6268 cd 3313 eo PEX 8603 ORP 12
Text: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark T E M IC D ansk c /o A E G Industri A/S R oskildevej 8 -1 0 2 620 A lbeitslund Tel: 45 4 2 6485 22 Fax: 45 43 6262 28 T E M IC T E L E F U N K E N m icro electro n ic G m bH K ruppstrasse 6
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