sio lpc chip intel p4 motherboard
Abstract: rdi-dmt-1206 980020 NAND RJMG-5312-11-01 Amphenol RJMG intel 810 MOTHERBOARD pcb CIRCUIT rdi DMT-1206 intel 810 MOTHERBOARD pcb CIRCUIT diagram c.i GD75232 smd 82801 g SCHEMATIC DIAGRAM
Text: Intel 810 Chipset Design Guide June 1999 Order Number: 290657-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability
|
Original
|
|
PDF
|
NTE2328
Abstract: audio amplifier IC 810 IC 810 audio Power Amplifier ic 810 NTE2329
Text: NTE2328 NPN & NTE2329 (PNP) Silicon Complementary Transistors Audio Power Output TO3PBL Type Package Features: D Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
|
Original
|
NTE2328
NTE2329
NTE2328
audio amplifier IC 810
IC 810 audio Power Amplifier
ic 810
NTE2329
|
PDF
|
nte2328
Abstract: audio amplifier IC 810
Text: NTE2328 NPN & NTE2329 (PNP) Silicon Complementary Transistors Audio Power Output Features: D Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
|
Original
|
NTE2328
NTE2329
nte2328
audio amplifier IC 810
|
PDF
|
GSM 1800 receiver
Abstract: mobile jamming measurement rf gsm rf distance measurement
Text: 4208 Off-Air Mobile Tester Highlights • High sensitivity and high output level for off-air tests • Possibility of using external amplifier thanks to separate receive and transmit connectors • Support for operation over the air • Small GSM tester with low power consumption
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BL34018 Handsfree speakerphore circuit Outline The BL 34018 Speakerphone integrated circuit incorporates the necessary amplifiers,attenuators, and control functions to produce a high quality hands-free speakerphone system.Included are a microphone amplifier,a power audio amplifier for
|
Original
|
BL34018
100mm
28-pin
|
PDF
|
operational amplifier application
Abstract: power operational amplifier
Text: CubicMOS Electronics Co,.Ltd. CubicMos Dual High Output Power Operational Amplifier Product specification CM9308 Features . High Signal -to Noise Ratio . High Slew . Low Distortion . Large Output Voltage Swing . Wide Temperature Range . Low Power Consumption
|
Original
|
CM9308
A2308D
050BSC
operational amplifier application
power operational amplifier
|
PDF
|
tic 236 datasheet
Abstract: CM9318 01-82K
Text: CubicMOS Electronics Co,.Ltd. CubicMOS Dual High Output Power Operational Amplifier Product specification CM9318 Features . High Signal to Noise Ratio . High Slew . Low Distortion . Large Output Voltage Swing . Wide Temperature Range . Low Power Consumption
|
Original
|
CM9318
CM9318
050BSC
tic 236 datasheet
01-82K
|
PDF
|
KIA6451P
Abstract: KIA6419 rcd 160 5 120 ohm KIA6419P
Text: SEMICONDUCTOR KIA6419P/F TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT LOW POWER AUDIO AMPLIFIER W L G H D P d T 5 1 4 FEATURES Wide Operating Supply Voltage Range 2-16 volts -Allows Q DIM MILLIMETERS _ 0.2 A 9.6 + _ 0.2 B 6.45 + _ 0.1 D 1.52 + _ 0.1 d
|
Original
|
KIA6419P/F
KIA6419P/F
KIA6149
FIGURE26-SPLIT
KIA6419
KIA6451P
KIA6419
rcd 160 5 120 ohm
KIA6419P
|
PDF
|
PMIC
Abstract: TPS658XX TPS65800 TPS65810 TPS65820
Text: Application Report SLVA248 – July 2006 Differences Between the TPS65800/810/820 PMIC Devices Charles Mauney . PMP Portable Power ABSTRACT This application note covers the basic differences among the three power management
|
Original
|
SLVA248
TPS65800/810/820
PMIC
TPS658XX
TPS65800
TPS65810
TPS65820
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 97074A IRFI4019H-117P DIGITAL AUDIO MOSFET Key Parameters h Features Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications
|
Original
|
7074A
IRFI4019H-117P
O-220
Descri-220
O-220AB
|
PDF
|
pcb 200W audio amplifier
Abstract: IRFI4019H-117P IRFI4019H
Text: PD - 97074A DIGITAL AUDIO MOSFET Key Parameters h Features Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS ON for Improved Efficiency
|
Original
|
7074A
IRFI4019H-117P
O-220
O-220AB
pcb 200W audio amplifier
IRFI4019H-117P
IRFI4019H
|
PDF
|
pcb 200W audio amplifier
Abstract: IRFI4019H-117P 12v 200W AUDIO AMPLIFIER 200w power amplifier PCB layout class d 200w 200w AUDIO AMPLIFIER 810 audio amplifier IRF 810 IRFI4019
Text: PD - 97074A DIGITAL AUDIO MOSFET Key Parameters h Features Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS ON for Improved Efficiency
|
Original
|
7074A
IRFI4019H-117P
O-220
O-220AB
pcb 200W audio amplifier
IRFI4019H-117P
12v 200W AUDIO AMPLIFIER
200w power amplifier PCB layout
class d 200w
200w AUDIO AMPLIFIER
810 audio amplifier
IRF 810
IRFI4019
|
PDF
|
TBA 810 amplifier
Abstract: TBA810AS 810AS TBA810S TBA 810 audio amplifier tba8105 TBA810 TBA810A AMPLIFIER TBA810s 810 audio amplifier
Text: TBA 810 S • TBA 810 AS Monolithisch Integrierte Schaltung Monolithic Integrated Circuit Anwendung: Application: NF-Leistungsverstärker Audio power amplifier Besondere Merkmale: Features: • Thermische Abschaltung • Hoher Ausgangsstrom bis 2,5 A • Thermal shut-down
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: l i ‘-•rr-.ir'V t •- 61C D TELEFUNKEN EL EC T R O N I C • fi^EOQ^b DODB^fl^ 5 IAL6G TBA 810 S *TBÀ 810 AS m ilFW K lK I electronic CrMtfvtIfchootogies -7 ^> V Monolithic Integrated Circuit Application: Audio power amplifier
|
OCR Scan
|
|
PDF
|
|
|
TBA 820 audio power amplifiers
Abstract: TBA audio power amplifiers TBA 810 audio amplifier TBA 810 amplifier tba 910 TBA810 810 audio amplifier TBA 810 AT amplifier tba 6v audio AMPLIFIER TBA810
Text: Semiconductors SGS-ATES Linear I.C.'s - Audio Amplifiers TBA810 Audio Power Amplifier with thermal shutdown CONNECTION D IA G R A M DESCRIPTION The T B A 810 S is a m onolithic integrated c irc u it in a 12-lead quad in-line plastic package intended fo r use as a low frequency class B am plifier.
|
OCR Scan
|
TBA810
12-lead
TBA810AS
TBA81
TBA 820 audio power amplifiers
TBA audio power amplifiers
TBA 810 audio amplifier
TBA 810 amplifier
tba 910
810 audio amplifier
TBA 810 AT
amplifier tba 6v audio
AMPLIFIER TBA810
|
PDF
|
810AS
Abstract: TBA 810 amplifier TBA810 TBA 810 AT TDA 810 amplifier IRF 810 810S TBA 810 audio amplifier TBA810S TBA810AS
Text: TBA 810S LINEAR I N T E G R A T E D C I R C U I T S 810AS 7 W AUDIO POWER AMPLIFIER WITH THERMAL SHUT-DOWN T he T B A 810 S is a m o n o lith ic in te g ra te d c ir c u it in a 12-lead q u a d in -lin e p la s tic p a cka g e , in te n d e d fo r use as a lo w fre q u e n c y c la s s B a m p lifie r.
|
OCR Scan
|
TBA810Ã
12-lead
TBA810S/AS
810AS
CS-0033/1
810AS
TBA 810 amplifier
TBA810
TBA 810 AT
TDA 810 amplifier
IRF 810
810S
TBA 810 audio amplifier
TBA810S
TBA810AS
|
PDF
|
TBA 810 amplifier
Abstract: TBA810 TBA 810 audio amplifier AMPLIFIER TBA810 TBA810 12 pin 18 v audio amplifier TBA810AS tba 810 specifications 810 audio amplifier TBA810S tba 810
Text: TBA810S • TBA810AS Monolithisch Integrierte Schaltung Monolithic Integrated Circuit Anwendung: NF-Leistungsverstärker Application: Audio power amplifier Besondere Merkmale: • Thermische Abschaltung Features: • Thermal shut-down • Hoher Ausgangsstirom bis 2,5 A
|
OCR Scan
|
TBA810S
TBA810AS
TBA 810 amplifier
TBA810
TBA 810 audio amplifier
AMPLIFIER TBA810
TBA810 12 pin 18 v audio amplifier
TBA810AS
tba 810 specifications
810 audio amplifier
TBA810S
tba 810
|
PDF
|
AMPLIFIER TBA810
Abstract: TBA800 Audio Power Amplifier TBA810 TBA 810 amplifier TBA 810 TBA800 20-20000Hz
Text: Integrated circuits for AF applications TBA800 Pin 1, Pin 3 Vs Cù o Supply voltage ÇJI Audio power amplifier, especially for TV- receivers Features: V O utput power Us = 24 V, / i L = 16 Q, / = 1 kHz, k = 10% p> 4.4 5 Pq W • High o u tp u t current, up to 1.5 A
|
OCR Scan
|
TBA800
TBA810
TBA810
20000Hz
TBA810:
AMPLIFIER TBA810
TBA800 Audio Power Amplifier
TBA 810 amplifier
TBA 810
TBA800
20-20000Hz
|
PDF
|
RM1S
Abstract: automatic room power control circuit block diagram TBA520 TBA810S TAA630S TBA510 TBA970 iA781 am ssb fm demodulator a3089
Text: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Amp. Lim. Detector //A 3065 Video Amplifier TBA970 Chroma Processing NTSC AiA746 , n A 780 , M 781 , /uA787 , M 788 Chroma Processing PAL TAA 630 S, TBA 510 , TBA 520 , TBA 540 , TBA 560 C, TBA990
|
OCR Scan
|
//A3064
//A3065
TBA970
//A746,
//A780,
//A781,
//A787,
//A788
TAA630S,
TBA510,
RM1S
automatic room power control circuit block diagram
TBA520
TBA810S
TAA630S
TBA510
TBA970
iA781
am ssb fm demodulator
a3089
|
PDF
|
A1312
Abstract: tba810s st TAA630S TBA510 TBA520 TBA970 A3065 double channel double balanced demodulators IF am VIDEO DEMODULATOR synchronous color killer circuits block diagram
Text: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Am p. Lim. Detector //A 3065 Video Amplifier T BA 970 Chrom a Processing N T S C AiA746 , n A 780, M 781, /uA787 , M 788 Chrom a Processing P A L TAA 630 S, T BA 510 , T B A 520, T B A 540 , T B A 560 C, TBA 990
|
OCR Scan
|
//A3064
//A3065
TBA970
//A746,
//A780,
//A781,
//A787,
//A788
TAA630S,
TBA510,
A1312
tba810s st
TAA630S
TBA510
TBA520
TBA970
A3065
double channel double balanced demodulators
IF am VIDEO DEMODULATOR synchronous
color killer circuits block diagram
|
PDF
|
transistor BD 522
Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi
|
OCR Scan
|
BD801
BD801
transistor BD 522
BDS08
transistor 3203
Transistor 3202 1 A 60
221A-06
10 watt power transistor bd
BD802
BD808
BD810
|
PDF
|
op amp ua 743
Abstract: NE5539 Replacement D 795 A SSM-2139 ssm2139
Text: Selection Trees Operational Amplifiers OPERATIONAL AMPLIFIERS I PRECISION Input Offset Voltage < 1 mV LOW POWER I s u p p i .y A D 705 O P -97 P M -1008 P M -1012 A D 7 0 6 (D u a l g 1 mA) O P -200 (D u a l) O P -297 (D u a l) A D 7 0 4 (Q u ad ) O P -400 (Q u ad )
|
OCR Scan
|
P-221
op amp ua 743
NE5539 Replacement
D 795 A
SSM-2139
ssm2139
|
PDF
|
KIA6419
Abstract: KIA6451P amplifier 32 ohm 200mW low thd
Text: K E G SEMICONDUCTOR TECHNICAL DATA KIA6419P/F s il ic o n m o n o l it h ic in t e g r a t e d c ir c u it LOW POWER AUDIO AMPLIFIER The KIA6419P/F is a low power audio amplifier integrated circuit intended primarily for telephone applications, such as in speakerphones. It provides
|
OCR Scan
|
KIA6419P/F
KIA6419P/F
KIA6419
FIGURE24-AUDI0
FIGURE25-FREQUENCY
FIGURE24
FIGURE26-SPLIT
75kfi
KIA6451P
amplifier 32 ohm 200mW low thd
|
PDF
|
CL10J
Abstract: PS219A4-ASTX KIA6419 KIA6451P
Text: K E G SEMICONDUCTOR TECHNICAL DATA KIA6419P/F s il ic o n m o n o l it h ic in t e g r a t e d c ir c u it LOW POWER AUDIO AMPLIFIER The KIA6419P/F is a low power audio amplifier integrated circuit intended primarily for telephone applications, such as in speakerphones. It provides
|
OCR Scan
|
KIA6419P/F
KIA6419P/F
KIA6419
FIGURE24-AUDI0
FIGURE25-FREQUENCY
FIGURE24
FIGURE26-SPLIT
20kfi
CL10J
PS219A4-ASTX
KIA6451P
|
PDF
|
