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    SONY msl 9351

    Abstract: TSB12LV23 tsb41ab1 g4
    Text: TSB41AB1 IEEE 1394aĆ2000 ONEĆPORT CABLE TRANSCEIVER/ARBITER SLLS423I − JUNE 2000 − REVISED MARCH 2005 D Fully Supports Provisions of IEEE D D D D D D D D 1394-1995 Standard for High Performance Serial Bus† and IEEE 1394a-2000 Fully Interoperable With FireWire and


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    PDF TSB41AB1 1394a2000 SLLS423I 1394a-2000 sllz012 SONY msl 9351 TSB12LV23 tsb41ab1 g4

    SLAS645F

    Abstract: MSP430 MSP430F5510 SLAU208 MSP430F5509IRGZT SLAS645
    Text: MSP430F550x, MSP430F5510 SLAS645F – JULY 2009 – REVISED MARCH 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • • • • • Low Supply-Voltage Range, 1.8 V to 3.6 V Ultra-Low Power Consumption – Active Mode AM All System Clocks Active


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    PDF MSP430F550x, MSP430F5510 SLAS645F SLAS645F MSP430 MSP430F5510 SLAU208 MSP430F5509IRGZT SLAS645

    05H-07H

    Abstract: No abstract text available
    Text: MSP430F532x SLAS678C – AUGUST 2010 – REVISED NOVEMBER 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • Low Supply-Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active 290 µA/MHz at 8 MHz, 3 V, Flash Program


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    PDF MSP430F532x SLAS678C 05H-07H

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    Untitled

    Abstract: No abstract text available
    Text: TLV320AIC3106 www.ti.com. SLAS509E – DECEMBER 2006 – REVISED DECEMBER 2008 LOW-POWER STEREO AUDIO CODEC FOR PORTABLE AUDIO/TELEPHONY


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    PDF TLV320AIC3106 SLAS509E 102-dBA 16/20/24/32-Bit 92-dBA

    RGC 55

    Abstract: SLAU208 SLAS590E MSP430 MSP430F5528 SLAU278 RGC55 ADC12SHSx
    Text: MSP430F551x MSP430F552x SLAS590E – MARCH 2009 – REVISED APRIL 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • • • • • Low Supply-Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active


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    PDF MSP430F551x MSP430F552x SLAS590E RGC 55 SLAU208 SLAS590E MSP430 MSP430F5528 SLAU278 RGC55 ADC12SHSx

    cbf 240

    Abstract: ADC10A
    Text: MSP430F530x, MSP430F5310 SLAS677B – SEPTEMBER 2010 – REVISED MARCH 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • • • • Low Supply-Voltage Range, 1.8 V to 3.6 V Ultra-Low Power Consumption – Active Mode AM All System Clocks Active


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    PDF MSP430F530x, MSP430F5310 SLAS677B cbf 240 ADC10A

    Untitled

    Abstract: No abstract text available
    Text: FemtoClock NG Dual Universal Frequency Translator IDT8T49N244I DATASHEET General Description Features The IDT8T49N244I is a dual PLL using FemtoClock® NG technology. It integrates low phase noise Frequency Translation / Synthesis and Jitter attenuation. It includes alarm and monitoring


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    PDF IDT8T49N244I IDT8T49N244I 98MHz 300MHz

    110R

    Abstract: S29GL128N
    Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this


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    PDF Am29LV6402M S29GL128N 110R

    SA-275

    Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
    Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document


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    PDF Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G

    PCS1900

    Abstract: TCM4400E VOCODER ULX 116 TCM4400
    Text: TCM4400E GSM/DCS BASEBAND AND VOICE A/D AND D/A RF INTERFACE CIRCUIT SLWS082A – JULY 1999 – REVISED MARCH 2000 D D D D D D D Applications Include GSM 900, PCS 1900, and DCS 1800 Cellular Telephones 80-Pin TQFP 0.4 mm or 0.5 mm Lead Pitch or 80-Ball MicroStar BGA


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    PDF TCM4400E SLWS082A 80-Pin 80-Ball PCS1900 TCM4400E VOCODER ULX 116 TCM4400

    71WS256NC0BAIAU

    Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics


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    PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512Nx0/S71WS256Nx0 71WS256NC0BAIAU cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002

    C000H-DFFFH

    Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
    Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation


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    PDF MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh

    Untitled

    Abstract: No abstract text available
    Text: LH28F320S5-L/S5H-L LH28F320S5-L/S5H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION A R Y • High performance read access time LH28F320S5-L90/S5H-L90 – 90 ns (5.0±0.25 V)/100 ns (5.0±0.5 V) LH28F320S5-L12/S5H-L12


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    PDF LH28F320S5-L/S5H-L LH28F320S5-L90/S5H-L90 LH28F320S5-L12/S5H-L12 SSOP056-P-0600) 85MAX. FBGA080/064-P-0818)

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


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    PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    TSOP-20 FOOTPRINT

    Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
    Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


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    PDF S29PL-J 16-Bit) S29PL-J TSOP-20 FOOTPRINT tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL

    A0-A21

    Abstract: LH28F320S3HNS-L11
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F320S3HNS-L11 Flash Memory 16M 2MB x 8 / 1MB × 16 (Model No.: LHF32K03) Spec No.: EL108029A Issue Date: December 17, 1998 sharp LHF32K03 ●Handle this document carefully for it contains material protected by international copyright


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    PDF LH28F320S3HNS-L11 LHF32K03) EL108029A LHF32K03 A0-A21 LH28F320S3HNS-L11

    EDE5104GBSA

    Abstract: EDE5104GBSA-5A-E EDE5108GBSA EDE5116GBSA
    Text: PRELIMINARY DATA SHEET 512M bits DDR-II SDRAM EDE5104GBSA 128M words x 4 bits EDE5108GBSA (64M words × 8 bits) EDE5116GBSA (32M words × 16 bits) Description Features The EDE5104GB is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks.


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    PDF EDE5104GBSA EDE5108GBSA EDE5116GBSA EDE5104GB EDE5108GB 64-ball M01E0107 E0249E30 EDE5104GBSA EDE5104GBSA-5A-E EDE5108GBSA EDE5116GBSA

    AD5590

    Abstract: No abstract text available
    Text: 16 Input, 16 Output Analog I/O Port with Integrated Amplifiers AD5590 FEATURES Low input bias current: 1 pA maximum Single supply operation Low noise: 22 nV/√Hz Unity gain stable Flexible serial interface SPI-/QSPI-/MICROWIRE-/DSP-compatible −40°C to +85°C operation


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    PDF AD5590 12-bit 80-ball MO-205-AC BC-80-2) AD5590BBC AD5590BBCZ EVAL-AD5590EBZ AD5590

    SLAS590H

    Abstract: 000FFFH MSP430F552x TA0019
    Text: MSP430F551x MSP430F552x SLAS590H – MARCH 2009 – REVISED FEBRUARY 2012 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • • • • • Low Supply-Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active


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    PDF MSP430F551x MSP430F552x SLAS590H SLAS590H 000FFFH MSP430F552x TA0019

    TSB12LV23

    Abstract: No abstract text available
    Text: TSB41AB1 IEEE 1394aĆ2000 ONEĆPORT CABLE TRANSCEIVER/ARBITER SLLS423I − JUNE 2000 − REVISED MARCH 2005 D Fully Supports Provisions of IEEE D D D D D D D D 1394-1995 Standard for High Performance Serial Bus† and IEEE 1394a-2000 Fully Interoperable With FireWire and


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    PDF TSB41AB1 1394a2000 SLLS423I 1394a-2000 sllz012 TSB12LV23

    A18E

    Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L A17OI
    Text: LH28F320S3-L/S3H-L PRELIMINARY SHARP LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F320S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide


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    PDF F320S3- LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L H28F320S3XX-L11 LH28F320S3XX-L14 SSOP056-P-0600) FBGA080/064-P-0818) A18E 56-PIN LH28F320S3H-L LH28F320S3-L A17OI

    Untitled

    Abstract: No abstract text available
    Text: AII-in-OneMemory A Managed Memory Subsystem for Code, Data, and System RAM in a Single Package Product Brief Series Product Description SST AII-in-OneMemory blends the key benefits of NOR, NAND and RAM in a unified architecture to address the cost and time-to-market needs of system designers developing mobile and consumer electronic


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    PDF SST88VP1107, SST88VP1107 SST88VP1107-80-5C-LBSE SST88VP1107-80-5W-LBSE