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    808 SEMICONDUCTOR Search Results

    808 SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    808 SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DC120V

    Abstract: No abstract text available
    Text: June 17, 2002 TECH BRIEF RE-DESIGNED 808 magnetic circuit breaker Attractive modern styled housing The 808 is designed to be instantly recognized as a product of E-T-A. IDEALLY SUITED FOR: • Telecommunications systems • Process control • Semiconductor protection


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BK81-20H Vorläufiges Datenblatt / Preliminary Datasheet Besondere Merkmale Features • • • • • Unmontierter Laserbarren


    Original     		PDF BK81-20H

    GDOY7042

    Abstract: No abstract text available
    Text: Aktiv gekühlter Diodenlaser-Barren, 1200 W cw bei 808 nm Actively Cooled Diode Laser Bar, 1200 W cw at 808 nm SPL E20N81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserstack mit 20 Laserbarren auf Mikrokanalkühler


    Original     		PDF E20N81G2 GDOY7042

    Untitled

    Abstract: No abstract text available
    Text: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm SPL BG81-9S, SPL BG81-2S Besondere Merkmale Features • Unmontierter Laserbarren • Hocheffiziente MOVPE Quantenfilmstruktur • Zuverlässiges, kompressiv verspanntes


    Original     		PDF BG81-9S, BG81-2S

    Untitled

    Abstract: No abstract text available
    Text: Unmontierte Laserbarren, 82.5% Füllfaktor, 808 nm Un-mounted Laser Bars, 82.5% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BS81-5S Vorläufiges Datenblatt / Preliminary data sheet Besondere Merkmale Features • • • • • Unmontierter Laserbarren


    Original     		PDF BS81-5S

    Untitled

    Abstract: No abstract text available
    Text: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BG81-9S, SPL BG81-2S Besondere Merkmale Features • Unmontierter Laserbarren • Hocheffiziente MOVPE Quantenfilmstruktur


    Original     		PDF BG81-9S, BG81-2S

    Untitled

    Abstract: No abstract text available
    Text: Unmontierte Laserbarren, 82.5% Füllfaktor, 808 nm Un-mounted Laser Bars, 82.5% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BS81-9S Besondere Merkmale Features • • • • • Unmontierter Laserbarren Design mit 75 Emittern (82.5% Füllfaktor)


    Original     		PDF BS81-9S

    Untitled

    Abstract: No abstract text available
    Text: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BK81-12S Besondere Merkmale Features • • • • • Unmontierter Laserbarren Design mit 25 Emittern (50% Füllfaktor)


    Original     		PDF BK81-12S

    BK-81

    Abstract: BK81-12S
    Text: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BK81-12S Besondere Merkmale Features • • • • • Unmontierter Laserbarren Design mit 25 Emittern (50% Füllfaktor)


    Original     		PDF BK81-12S BK-81 BK81-12S

    GDOY7031

    Abstract: No abstract text available
    Text: Aktiv gekühlter Diodenlaser-Barren, 450 W qcw bei 808 nm Actively Cooled Diode Laser Bar, 450 W qcw at 808 nm SPL E03N81S9 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserstack mit 3 Laserbarren auf Mikrokanalkühler


    Original     		PDF E03N81S9 GDOY7031

    BS816

    Abstract: No abstract text available
    Text: Unmontierte Laserbarren, 82.5% Füllfaktor, 808 nm Unmounted Laser Bars, 82.5% Filling Factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BS81-6 Besondere Merkmale Features • • • • • Unmontierter Laserbarren Design mit 75 Emittern (82.5% Füllfaktor)


    Original     		PDF BS81-6 BS816

    Untitled

    Abstract: No abstract text available
    Text: Unmontierte Laserbarren, 30% Füllfaktor, 808 nm Unmounted Laser Bars, 30% Fill-Factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BX81-2S Besondere Merkmale Features • • • • • Unmontierter Laserbarren Design mit 19 Emittern (30% Füllfaktor)


    Original     		PDF BX81-2S

    GDOY7041

    Abstract: No abstract text available
    Text: Aktiv gekühlter Diodenlaser-Barren, 60 W cw bei 808 nm Actively Cooled Diode Laser Bar, 60 W cw at 808 nm SPL E01Y81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Kollimierte Laserstrahlung durch FAC-Linse • Laserbarren auf Mikrokanalkühler


    Original     		PDF E01Y81G2 GDOY7041

    GDOY7044

    Abstract: MATERIAL SAFETY
    Text: Passiv gekühlter Diodenlaser-Barren, 140 W cw bei 808 nm Passively Cooled Diode Laser Bar, 140 W cw at 808 nm SPL MY81S9 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Kollimierte Strahlung durch FAC-Linse • Laserbarren auf passiv gekühlter


    Original     		PDF MY81S9 GDOY7044 MATERIAL SAFETY

    GDOY7044

    Abstract: No abstract text available
    Text: Passiv gekühlter Diodenlaser-Barren, 35 W cw bei 808 nm Passively Cooled Diode Laser Bar, 35 W cw at 808 nm SPL MY81X2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Kollimierte Strahlung durch FAC-Linse • Laserbarren auf passiv gekühlter


    Original     		PDF MY81X2 GDOY7044

    GDOY7044

    Abstract: No abstract text available
    Text: Passiv gekühlter Diodenlaser-Barren, 45 W cw bei 808 nm Passively Cooled Diode Laser Bar, 45 W cw at 808 nm SPL MY81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Kollimierte Strahlung durch FAC-Linse • Laserbarren auf passiv gekühlter


    Original     		PDF MY81G2 GDOY7044

    808nm 100mw laser diode

    Abstract: Laser Diode 808 nm SLD-808-P200-05 laser diode 780 nm laser diode 808nm 808nm laser diode Laser Diode 808 300 mw diode laser 808nm 200mW 808 nm 100 mw 808nm
    Text: SLD-808-P200-05 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD-808-P200-05 •Specifications 1 Device: (2) Structure: (3) Power Output: Laser Diode TO-18(φ5.6mm) 200mW (180mW Recommended) ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)


    Original     		PDF SLD-808-P200-05 808nm 200mW 180mW 808nm 100mw laser diode Laser Diode 808 nm SLD-808-P200-05 laser diode 780 nm laser diode 808nm 808nm laser diode Laser Diode 808 300 mw diode laser 808nm 200mW 808 nm 100 mw

    GDOY7030

    Abstract: No abstract text available
    Text: Passiv gekühlter Diodenlaser-Barren, 150 W qcw bei 808 nm Passively Cooled Diode Laser Bar, 150 W qcw at 808 nm SPL MN81S9 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserbarren auf passiv gekühlter Wärmesenke, kein Kühlwasser erforderlich


    Original     		PDF MN81S9 GDOY7030

    Laser Diode 808 300 mw

    Abstract: No abstract text available
    Text: SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-04 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)


    Original     		PDF SLD-808-P200-C-04 808nm 886-3-485-268in Laser Diode 808 300 mw

    Untitled

    Abstract: No abstract text available
    Text: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BG81-9S Besondere Merkmale Features • • • • • Unmontierter Laserbarren Design mit 25 Emittern (50% Füllfaktor)


    Original     		PDF BG81-9S

    Untitled

    Abstract: No abstract text available
    Text: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BG81-20S Vorläufiges Datenblatt / Preliminary data sheet Besondere Merkmale Features • Unmontierter Laserbarren • Hocheffiziente MOVPE Quantenfilmstruktur


    Original     		PDF BG81-20S

    BUF C808

    Abstract: SOP30 TMP87C808N zf gear TMP87C408N TMP87P808N TMP87C408DM TMP87C408LM TMP87C408LN TMP87C408M
    Text: TO SH IB A TM P87C408/808/408L/808L CMOS 8-Bit Microcontroller TMP87C408M, TMP87C408N, TMP87C808M, TMP87C808N TMP87C408LM, TMP87C408LN, TMP87C808LM, TMP87C808LN TMP87C408DM TMP87C408/808/408I./808L is high speed and high performance 8-bit single chip microcomputers to operate


    OCR Scan     		PDF TMP87C408/808/408L/808L TMP87C408M, TMP87C408N, TMP87C808M, TMP87C808N TMP87C408LM, TMP87C408LN, TMP87C808LM, TMP87C808LN TMP87C408DM BUF C808 SOP30 zf gear TMP87C408N TMP87P808N TMP87C408DM TMP87C408LM TMP87C408LN TMP87C408M

    87c408m

    Abstract: No abstract text available
    Text: TOSHIBA TM P87C408/808/408L/808L CMOS 8-Bit M icrocontroller TMP87C408M, TMP87C408N, TMP87C808M, TMP87C808N TMP87C408LM, TMP87C408LN, TMP87C808LM, TMP87C808LN TMP87C408DM TM P87C408/808/408I./808L is high speed and high perform ance 8-b it single chip microcomputers to operate


    OCR Scan     		PDF P87C408/808/408L/808L TMP87C408M, TMP87C408N, TMP87C808M, TMP87C808N TMP87C408LM, TMP87C408LN, TMP87C808LM, TMP87C808LN TMP87C408DM 87c408m

    murata Ceramic Resonator cst800mtw

    Abstract: TMP86C408DM TMP86C808DM TMP86P808DM cst8.00mtw
    Text: TOSHIBA TM P86C408/808 CMOS 8-Bit Microcontroller TMP86C408DM, TMP86C808DM The TMP86C408/808 are high speed and high performance 8-bit single chip microcomputers w ith sm all package. The MCU contain CPU core, ROM, RAM, multirole timer counter, SEI and UART, 8-bit AD


    OCR Scan     		PDF P86C408/808 TMP86C408DM, TMP86C808DM TMP86C408/808 TMP86C408DM 256x8 P-SSOP30-56-0 TMP86P808DM TMP86C808DM TLCS-870/C murata Ceramic Resonator cst800mtw TMP86P808DM cst8.00mtw