RLT808M-1.5WFC
Abstract: No abstract text available
Text: RLT808M-1.5WFC TECHNICAL DATA Multi-Mode 14-Pin Butterfly Laser Diode Features • • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Ouput Power: 1500 mW Package: 14-Pin Butterfly, Thermistor, TEC Fiber: 100µm core diameter
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RLT808M-1
14-Pin
RLT808M-1.5WFC
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RLT808M-3WFC
Abstract: No abstract text available
Text: RLT808M-3WFC TECHNICAL DATA Multi-Mode 14-Pin Butterfly Laser Diode Features • • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Ouput Power: 3000 mW Package: 14-Pin Butterfly, Thermistor, TEC Fiber: 100µm core diameter
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RLT808M-3WFC
14-Pin
RLT808M-3WFC
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808 nm 100 mw
Abstract: PD-LD SANYO DL DL-LS2032 DL-LS2032A DL-LS2032B DL-LS2032C CW laser diode 808 nm
Text: INFRARED LASER DIODE DL-LS2032 Tentative Ver.1 Jan. 2003 Package Features Tolerance : ± 0.2 Unit : mm ø5.6 - 0.03 ø4.4 • Lasing wavelength : 808 nm (Typ.) • Single longitudinal mode • High output power : 100 mW at 50°C • Low threshold current : Ith = 40 mA (Typ.)
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DL-LS2032
100mW
DL-LS2032A
DL-LS2032B
DL-LS2032C
808 nm 100 mw
PD-LD
SANYO DL
DL-LS2032
DL-LS2032A
DL-LS2032B
DL-LS2032C
CW laser diode 808 nm
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DL-7141-035A
Abstract: DL-7141-035 Tottori Sanyo Electric DL-7141-035 808 nm 100 mw
Text: INFRARED LASER DIODE DL-7141-035 Features Ver.1 Oct. 2003 Package Tolerance : ± 0.2 Unit : mm ø5.6- 0.025 ø4.4 • Lasing wavelength : 808 nm (Typ.) • Single longitudinal mode • High output power : 100 mW at 50°C • Low threshold current : Ith = 40 mA (Typ.)
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DL-7141-035
100mW
DL-7141-035A
DL-7141-035B
DL-7141-035C
DL-7141-035A
DL-7141-035
Tottori Sanyo Electric DL-7141-035
808 nm 100 mw
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Laser-Diode 808
Abstract: laserdiode Laser-Diode RLT808150GO
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808150GO TECHNICAL DATA High Power Infrared Laserdiode Emitting Dimensions: 100 x 1 µm Lasing wavelength: 808 nm typ.
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RLT808150GO
10x30
Laser-Diode 808
laserdiode
Laser-Diode
RLT808150GO
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RLT808500GO
Abstract: 808 nm 100 mw Laser-Diode 808
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808500GO TECHNICAL DATA High Power Infrared Laserdiode Emitting Dimensions: 100 x 1 µm Lasing wavelength: 808 nm typ.
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RLT808500GO
10x30
RLT808500GO
808 nm 100 mw
Laser-Diode 808
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Untitled
Abstract: No abstract text available
Text: 808/830 nm Broad Area Laser Diode Product Family Specification Sheet The M8xx series of Broad Area Laser Diodes from Axcel Photonics offer high CW optical power from a 100 micron multi-mode aperture and high brightness with industry leading reliability. This series of devices is
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D-82140
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Untitled
Abstract: No abstract text available
Text: LCA80830S9N OPTICAL AND ELECTRI CAL CHARACTERISTICS Tc=25ºC DESCRI PTION SYMBOL MIN . TYPICAL MA X. TEST CONDIT ION Lasing Wavelength (nm) p 800 808 820 Po=30mW Threshold Curr ent (mA) Ith 30 50 70 Po=30mW Operation Curr ent (mA) Iop 60 80 100 Po=30mW
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LCA80830S9N
lca80830s9n
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3w 9 pin laser
Abstract: SDL laser diode manual JDSU 2400 SDL Laser diode 2462-p1 0/SDL-2362-P1
Text: COMMERCIAL LASERS 2.0 & 3.0 W, 798 to 800/808 to 812 nm High-brightness Diode Lasers 2400 Series Key Features • 2 and 3 W CW power • 100 and 200 µm apertures • High-efficiency MOCVD quantum well design • TEC option for wavelength control • Open heatsink and window packages
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2400on
2400DIODELASER
498-JDSU
5378-JDSU
3w 9 pin laser
SDL laser diode manual
JDSU 2400
SDL Laser diode
2462-p1
0/SDL-2362-P1
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808 nm 1000 mw 2 pins
Abstract: 808 nm 1000 mw laser diode DIODE 809 CW laser diode 808 nm 2362-P1 2382-P1 jdsu 2380
Text: COMMERCIAL LASERS 0.5 to 4.0 W, 798 to 800/808 to 812 nm Diode Lasers 2300 Series Key Features • 0.5, 1.2, 2.0 and 4.0 W CW power • 50, 100, 200 and 500 µm apertures • High-efficiency MOCVD quantum well design • TEC option for wavelength control • Open heatsink and window packages
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2300DIODELASER
5378-JDSU
808 nm 1000 mw 2 pins
808 nm 1000 mw laser diode
DIODE 809
CW laser diode 808 nm
2362-P1
2382-P1
jdsu 2380
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M9-808-0150-S50
Abstract: C2-808-0100-S50 808nm 100mw laser diode M9-808-0150-S5P
Text: Product Specifications Features 808 nm Single-Mode Laser Diodes • Up to 150 mW CW output power. • High Quality, Reliability, & Performance Applications • Optical Data Storage • Spectral Analysis Description: High brightness, high quality, and high reliability are the foundation of our single mode product line. Axcel’s 808 nm single mode
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ss-808-pppp-s50
M9-808-0150-S50
C2-808-0100-S50
808nm 100mw laser diode
M9-808-0150-S5P
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808nm 100mw laser diode
Abstract: No abstract text available
Text: Product Specifications Features 808 nm Single-Mode Laser Diodes • Up to 150 mW CW output power. Description: • High Quality, Reliability, & Performance Applications • Illumination • Laser Display • Printing • Sensing • Medical Applications • Imaging
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HW/axcel/sm/808nm-sm-laser-diode
808nm 100mw laser diode
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JDSU CQF935 DFB
Abstract: CQF935 JDS uniphase CQF935 uniphase CQF935 Laser Diode 808 2 pin 1000 mw datasheets JDS uniphase CQF935 808 nm 1000 mw 2 pins GR-468-CORE 808 nm 1000 mw laser diode JDSU CQF935
Text: Product Bulletin 50 mW 1550 nm CW DFB Lasers with PM Fiber for WDM Applications CQF935/808 Series The JDS Uniphase CQF935/808 series laser is specifically developed for wavelength division multiplexing WDM systems, where it is used as a wavelength selected source in combination with an
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CQF935/808
RWR-030-42-01083-WWM,
JDSU CQF935 DFB
CQF935
JDS uniphase CQF935
uniphase CQF935
Laser Diode 808 2 pin 1000 mw
datasheets JDS uniphase CQF935
808 nm 1000 mw 2 pins
GR-468-CORE
808 nm 1000 mw laser diode
JDSU CQF935
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JDSU CQF935 DFB
Abstract: JDSU CQF935 JDS uniphase CQF935 uniphase CQF935 CQF935
Text: Product Bulletin 50 mW 1550 nm CW DFB Lasers with PM Fiber for WDM Applications CQF935/808 Series The JDS Uniphase CQF935/808 series laser is specifically developed for wavelength division multiplexing WDM systems, where it is used as a wavelength selected source in combination with an
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CQF935/808
JDSU CQF935 DFB
JDSU CQF935
JDS uniphase CQF935
uniphase CQF935
CQF935
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Untitled
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK GmbH PRESENTS. NEW! OPTICALLY PUMPED MID-IR POWER LEDS MIRO33A6, 3.3 um, 0.75 mW at 0.3A pulse, 0.22 mW cw at 70 mA, 120°, M10x1 thread, datasheet MIRO39A6, 3.9 um, 0.65 mW at 0.3A pulse, 0.19 mW cw at 70 mA, 120°, M10x1 thread, datasheet
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MIRO33A6,
M10x1
MIRO39A6,
KA-7301B,
RLDH808-1200-5,
2006-September-18
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G081PU1750M
Abstract: No abstract text available
Text: G081PU1750M TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 750 mW • Typical 808 nm Emission Wavelength • High Reliability • High Efficiency Applications • Laser Pumping • Medical Usage • Printing • Heating
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G081PU1750M
g081pu1750m
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jdsu optic switch
Abstract: 808 nm 100 mw 2445-G1 laser diode for free space communication TO56 package Laser Diode 808 nm 5w CW laser diode 808 nm 2400150 TO-56 package laser diode 2455-G1
Text: COMMERCIAL LASERS Diode Lasers, High Brightness 0.6 to 8.5 W, 8xx nm 24xx Series Key Features • 35 – 200 µm aperatures available • High-efficiency, MOCVD quantum well design • Open heat sink packages and encapsulated devices • High reliability The 24xx series diode lasers represent a breakthrough in high continuous wave
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498-JDSU
5378-JDSU
24XXDIODELASER
jdsu optic switch
808 nm 100 mw
2445-G1
laser diode for free space communication
TO56 package
Laser Diode 808 nm 5w
CW laser diode 808 nm
2400150
TO-56 package laser diode
2455-G1
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to56
Abstract: No abstract text available
Text: COMMERCIAL LASERS Diode Lasers, High Brightness 0.6 to 8.5 W, 8xx nm 24xx Series Key Features • 35 – 200 µm aperatures available • High-efficiency, MOCVD quantum well design • Open heat sink packages and encapsulated devices • High reliability The 24xx series diode lasers represent a breakthrough in high continuous wave
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498-JDSU
5378-JDSU
24XXDIODELASER
to56
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Untitled
Abstract: No abstract text available
Text: COMMERCIAL LASERS Diode Lasers, High Brightness 0.6 to 8.5 W, 8xx nm 24xx Series Key Features • 35 – 200 µm aperatures available • High-efficiency, MOCVD quantum well design • Open heat sink packages and encapsulated devices • High reliability The 24xx series diode lasers represent a breakthrough in high continuous wave
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498-JDSU
5378-JDSU
24XXDIODELASER
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DL-8141-002
Abstract: No abstract text available
Text: INFRARED LASER DIODE DL-8141-002 Ver.1 Feb. 2007 Features Package • Lasing wavelength : 808 nm Typ. • Single longitudinal mode • High output power : 200 mW at 50°C • Low threshold current : Ith = 50 mA (Typ.) • Fundamental transverse mode • Package : ø5.6mm
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DL-8141-002
200mW
100mW
DL-8141-002
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IR Laser diode
Abstract: No abstract text available
Text: IR Laser Diode Te c h n i c a l D a t a LCA808500M9N ABSOLUTE MAXIMUM RATINGS Tc=25ºC Features DESCRIPTION SYMBOL RATED VALUE Po 500 • Index Guided MQW Structure Optical Power (mW) • Wavelength : 808 nm (Typ.) Operation Temperature (ºC) Top -10 to +50
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LCA808500M9N
lca808500m9n
IR Laser diode
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DL-LS2075
Abstract: No abstract text available
Text: INFRARED LASER DIODE DL-LS2075 Ver.3 Sep. 2005 Features Package • Lasing wavelength : 808 nm Typ. • Single longitudinal mode • High output power : 200 mW at 50°C • Low threshold current : Ith = 50 mA (Typ.) • Fundamental transverse mode • Package : ø5.6mm
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DL-LS2075
200mW
100mW
DL-LS2075
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HLDH-650-A-10-01
Abstract: HLDH-650-A1001 HLDH-808-B20001 HLDH-660-A2001 laser diode TO-18 package HLDH-808-B-200-01 HLDH-780-A-90-01 HLDH-660-A5001 HLDP-650-A-5-02 HLDH-660-A-20-01
Text: Laser Products Laser Diode Ta=25°C Operating Device No Output Operating Monitor Laser Beam temperature power current current wavelength divergence Topr Po lop im Xp e//1 e± °C mW mA mA nm deg Package -W indow 0 1.6 02.0 - L D fa ce t 1.27 Zii t 0.3 2.3.
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HLDD-650-A-7-01
HLDP-635-A-5-01
HLDP-650-A-5-01
HLDP-650-A-5-02
HLDH-650-A-10-01
HLDP-780-A-3-01
HLDH-650-A1001
HLDH-808-B20001
HLDH-660-A2001
laser diode TO-18 package
HLDH-808-B-200-01
HLDH-780-A-90-01
HLDH-660-A5001
HLDH-660-A-20-01
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Laser Diode 808 2 pin 1000 mw
Abstract: 808 nm 1000 mw laser diode CW laser diode 808 nm tunable lasers diode applications LD-808-500C-C LASER DISTANCE METER 808 nm 1000 mw Laser-Diode 808 Laser Diode 808 nm Laser Diode LD Catalog
Text: TUNABLE LASER DIODES High-Power Laser Diodes Fiber Pigtailed HHL TO-3 LASER DIODES Key Features • Longer laser diode lifetime due to aluminum free device structures* • Visible, near IR and infrared laser diodes with center wavelengths of 670, 808, 980 and 1930 nm
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