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    8050SS TRANSISTOR Search Results

    8050SS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    8050SS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8050SS

    Abstract: transistor 8050ss 8050SS Datasheet 8050ss TRANSISTOR equivalent 8050S 8050ss TRANSISTOR
    Text: 8050SS 8050SS TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1 1. EMITTER W (Tamb=25 ) Collector current ICM: 2. COLLECTOR 1.5 A 3. BASE Collector-base voltage V(BR)CBO: 40 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃


    Original     		PDF 8050SS 800mA, 8050SS transistor 8050ss 8050SS Datasheet 8050ss TRANSISTOR equivalent 8050S 8050ss TRANSISTOR

    8050SS

    Abstract: 8050SSD transistor 8050ss
    Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF 8050SS-C 8050SS-D -55OC 8050SS 100uAdc, 8050SSD transistor 8050ss

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF 8050SS-C 8050SS-D -55OC 8050SS

    8050SS

    Abstract: datasheet of ic 555 IC 555 8050SS Datasheet datasheet ic 555 transistor 8050ss
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050SS ） TRANSISTOR（ NPN TO—92 FEATURES Power dissipation PCM : 1 W （Tamb=25℃） 1.EMITTER Collector current 2. COLLECTOR ICM: 1.5 A Collector-base voltage V BR CBO : 40


    Original     		PDF 8050SS O--92 270TYP 050TYP 8050SS datasheet of ic 555 IC 555 8050SS Datasheet datasheet ic 555 transistor 8050ss

    8050SS

    Abstract: transistor 8050ss 8050SSD
    Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF 8050SS-C 8050SS-D -55OC 8050SS 100uAdc, transistor 8050ss 8050SSD

    8050SS

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF 8050SS-C 8050SS-D -55OC 8050SS 100uAdc,

    8050SS

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF 8050SS-C 8050SS-D -55OC 8050SS

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF 8050SS-C 8050SS-D -55OC 8050SS

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 8050SS TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z General Purpose Switching and Amplification. 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 8050SS 100mA 800mA 800mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8050SS Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25℃) : 2 W (TC=25℃) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF 8050SS 100mA 800mA 800mA, 30MHZ

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8050SS Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol


    Original     		PDF 8050SS 100mA 800mA 800mA, 30MHZ

    Untitled

    Abstract: No abstract text available
    Text: TO-92 8050SS Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 8050SS 100mA 800mA 800mA, 30MHZ

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6