800V PNP Search Results

800V PNP Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73128RHX/SAMPLE	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency PNP Transistor Array
ISL73096RHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096RHX/SAMPLE	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

800V PNP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1361 Abstract: LT1361 LT1354 LT1359 LT1360 LT1363 LT1365 1361 transistor npn g1345 Text: LT1361/LT1362 Dual and Quad 50MHz, 800V/µs Op Amps U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain-Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads	Original	LT1361/LT1362 50MHz, 50MHz 250nA Filter04 1361 LT1361 LT1354 LT1359 LT1360 LT1363 LT1365 1361 transistor npn g1345	PDF
1360 marking Abstract: lt1360 SFH205 LT1354 LT1359 LT1360CN8 LT1363 ltc 1360 marking 909 amp Text: LT1360 50MHz, 800V/µs Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current 9nV/√Hz Input Noise Voltage Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads	Original	LT1360 50MHz, 50MHz 250nA LT1360 220pF 470pF 1360 marking SFH205 LT1354 LT1359 LT1360CN8 LT1363 ltc 1360 marking 909 amp	PDF
LT1360/1/2 Abstract: No abstract text available Text: LT1360 50MHz, 800V/µs Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current 9nV/√Hz Input Noise Voltage Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads	Original	LT1360 50MHz, 50MHz 250nA LT1360 220pF 470pF LT1361/LT1362 LT1360/1/2	PDF
Untitled Abstract: No abstract text available Text: LT1361/LT1362 Dual and Quad 50MHz, 800V/µs Op Amps U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads	Original	LT1361/LT1362 50MHz, 50MHz 250nA LT1360 LT1364/LT1365 70MHz, 000V/Â	PDF
1361 transistor npn Abstract: LT1354 LT1359 LT1360 LT1361 LT1363 LT1365 1361 Text: LT1361/LT1362 Dual and Quad 50MHz, 800V/µs Op Amps U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads	Original	LT1361/LT1362 50MHz, 50MHz 250nA LT1360 LT1364/LT1365 70MHz, LT1361/LT1362, 1361 transistor npn LT1354 LT1359 LT1360 LT1361 LT1363 LT1365 1361	PDF
transistor marking N1 Abstract: jc86 S10XXXH Text: S10xxxH  SCR FEATURES IT RMS = 10A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S10xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated	Original	S10xxxH S10xxxH transistor marking N1 jc86	PDF
transistor marking N1 Abstract: No abstract text available Text: S08xxxH  SCR FEATURES IT RMS = 8A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S08xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated	Original	S08xxxH S08xxxH transistor marking N1	PDF
S2516 Abstract: transistor marking N1 Text: S25xxxH  SCR FEATURES IT RMS = 25A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated	Original	S25xxxH S25xxxH S2516 transistor marking N1	PDF
transistor marking N1 Abstract: S04XXXH Text: S04xxxH  SCR FEATURES IT RMS = 4A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S04xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated	Original	S04xxxH S04xxxH transistor marking N1	PDF
transistor marking N1 Abstract: No abstract text available Text: S06xxxH  SCR FEATURES IT RMS = 6A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S06xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated	Original	S06xxxH S06xxxH transistor marking N1	PDF
S16XXXH Abstract: No abstract text available Text: S16xxxH  SCR FEATURES IT RMS = 16A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S16xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated	Original	S16xxxH S16xxxH	PDF
scr 12a Abstract: transistor marking N1 g i angle S12XXXH Text: S12xxxH  SCR FEATURES IT RMS = 12A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S12xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated	Original	S12xxxH S12xxxH scr 12a transistor marking N1 g i angle	PDF
transistor marking N1 Abstract: 3016p Text: S30xxxH  SCR FEATURES IT RMS = 30A VDRM = 800V to 1200V High surge current capability K A G DESCRIPTION The S30xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated	Original	S30xxxH S30xxxH transistor marking N1 3016p	PDF
transistor marking N1 Abstract: S4016 S40XXXH Text: S40xxxH  SCR FEATURES IT RMS = 40A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S40xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated	Original	S40xxxH S40xxxH transistor marking N1 S4016	PDF

RT 0100 Abstract: 1amn scr Igt 1mA 0398C X04XXX X0403 Text: X04xxxF SENSITIVE GATE SCR FEATURES IT RMS = 4A VDRM = 400V to 800V Low IGT < 200µA DESCRIPTION K The X04xxxF series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required,	Original	X04xxxF X04xxxF O202-3 RT 0100 1amn scr Igt 1mA 0398C X04XXX X0403	PDF
P0201 Abstract: No abstract text available Text: P0201xA P0202xA  SENSITIVE GATE SCR FEATURES IT RMS = 0.8A VDRM = 500V to 800V Low IGT ≤ 20 µA max to < 200 µA K G A DESCRIPTION The P020xxA series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose	Original	P0201xA P0202xA P020xxA P0201	PDF
Untitled Abstract: No abstract text available Text: FS08.D STANDARD SCR DPAK Plastic On-State Current 8 Amp Gate Trigger Current 0.5 mA to 15 mA Off-State Voltage 200 V ÷ 800V K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general	Original	252-AA 28BSC	PDF
X2N SCR Abstract: X2M ST st x2n X2B marking X2B SCR X0202MN X0203BN X0202BN X0203NN X0205BN Text: X02xxxN SENSITIVE GATE SCR FEATURES IT RMS = 1.4A VDRM = 200V to 800V Low IGT < 200 µA A K A G DESCRIPTION The X02xxxN series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose high volume applications using surface mount	Original	X02xxxN X02xxxN OT223 X2N SCR X2M ST st x2n X2B marking X2B SCR X0202MN X0203BN X0202BN X0203NN X0205BN	PDF
Untitled Abstract: No abstract text available Text: LT1361/LT1362 Dual and Q uad 50MHz, 800V/ns O p Amps KOTURCS DCSCRIPTIOH • 50MHz Gain-Bandwidth ■ 800V/ .is Slew Rate ■ 5mA Maximum Supply Current per Amplifier The LT1361/LT1362 are dual and quad low power high ■ Unity-Gain Stable current and higher slew rate than devices with comparable	OCR Scan	LT1361/LT1362 50MHz, 00V/ns 50MHz 250nA 150i2 LT1362 119mW LT1361/LT1362	PDF
LT1360CN8 IC Abstract: No abstract text available Text: _LT1360 50MHz, 800V/\|a,s O p A m p F€OTUR€S D CSCRIPTIOn • 50MHz Gain-Bandwidth ■ 800V/\|iS Slew Rate ■ 5mA Maximum Supply Current The LT1360 is a high speed, very high slew rate opera ■ 9nV/VHz Input Noise Voltage age, lower input bias current and higher DC gain than	OCR Scan	LT1360 50MHz, 50MHz 250nA 150S2 150i2 LT1360 LT1360CN8 IC	PDF
Untitled Abstract: No abstract text available Text: / T L i n e A ß TECH NO LO GY í s í 50MHz, 800V/jis O p A m p F€fiTUR€S D C S C M P T IO n • 50MHz Gain-Bandwidth ■ 800V/ js Slew Rate ■ 5mA Maximum Supply Current The LT1360 is a high speed, very high slew rate opera tional amplifierwith excellent DC performance. The LT1360	OCR Scan	50MHz, 00V/jis 50MHz LT1360 LT1360	PDF
Untitled Abstract: No abstract text available Text: / = 7 SGS-THOMSON ^ 7 # ® ILiET^OlDGS S25XXXH SCR FEATURES • It rms = 25A - V drm = 200V to 800V ■ High surge current capability DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose	OCR Scan	S25XXXH S25xxxH T0220	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON KiODOlHlOilLiOir^OOiflOOi S0602xH SENSITIVE GATE SCR FEATURES = 6A > V drm = 200V to 800V • Low Ig t < 200 lA ■ It ( r m s DESCRIPTION The S0602xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose	OCR Scan	S0602xH S0602xH T0220	PDF
JIS B 0209 general Abstract: PW01 SCR PNPN CH85 S12XXX S12XXXH Text: r z 7 SGS-THOMSON ^ 7 # K LICTH0HC1 S12XXXH SCR FEATURES =12A > V drm=200V to 800V • High surge current capability ■ It rm s DESCRIPTION The S12xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose	OCR Scan	S12xxxH T0220 7c12ti237 D070144 JIS B 0209 general PW01 SCR PNPN CH85 S12XXX	PDF

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800V PNP Search Results

800V PNP Result Highlights (5)

800V PNP Datasheets Context Search

1361

1360 marking

LT1360/1/2

Untitled

1361 transistor npn

transistor marking N1

transistor marking N1

S2516

transistor marking N1

transistor marking N1

S16XXXH

scr 12a

transistor marking N1

transistor marking N1

RT 0100

P0201

Untitled

X2N SCR

Untitled

LT1360CN8 IC

Untitled

Untitled

Untitled

JIS B 0209 general