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    800V Search Results

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    CR2AS-16A-T13#B00 Renesas Electronics Corporation 800V - 2A - Thyristor Low Power Use Visit Renesas Electronics Corporation
    CR03AM-16A-B#BD0 Renesas Electronics Corporation 800V-0.3A-Thyristor Low Power Use Visit Renesas Electronics Corporation
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    800V Price and Stock

    Panasonic Electronic Components ERJ-8ENF2800V

    RES SMD 280 OHM 1% 1/4W 1206
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    DigiKey ERJ-8ENF2800V Reel 560,000 5,000
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    ERJ-8ENF2800V Cut Tape 1,359 1
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    Master Electronics ERJ-8ENF2800V 45,000
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    New Advantage Corporation ERJ-8ENF2800V 50,000 1
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    Ozdisan Elektronik ERJ-8ENF2800V
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    Panasonic Electronic Components ERJ-3EKF1800V

    RES SMD 180 OHM 1% 1/10W 0603
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    DigiKey ERJ-3EKF1800V Reel 100,000 5,000
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    ERJ-3EKF1800V Cut Tape 2,393 1
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    Bristol Electronics ERJ-3EKF1800V 4,776
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    Component Electronics, Inc ERJ-3EKF1800V 200
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    Panasonic Electronic Components ERJ-6ENF1800V

    RES SMD 180 OHM 1% 1/8W 0805
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    DigiKey ERJ-6ENF1800V Reel 75,000 5,000
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    ERJ-6ENF1800V 4,875 89
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    Component Electronics, Inc ERJ-6ENF1800V 6,000
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    Panasonic Electronic Components ERJ-P08F1800V

    RES SMD 180 OHM 1% 2/3W 1206
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    DigiKey ERJ-P08F1800V Reel 5,000 5,000
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    ERJ-P08F1800V Cut Tape 19 1
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    Master Electronics ERJ-P08F1800V
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    Panasonic Electronic Components ERA-8VEB1800V

    RES 180 OHM 0.1% 1/4W 1206
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    DigiKey ERA-8VEB1800V Cut Tape 4,990 1
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    Avnet Americas ERA-8VEB1800V Reel 12 Weeks 5,000
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    800V Datasheets (341)

    Part ECAD Model Manufacturer Description Curated Type PDF
    800-V3-002-12-002101 Preci-Dip Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - CONN HDR 2POS 0.100 T/H Original PDF
    800-V3-002-20-001101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN SOLDER TAIL RA Original PDF
    800-V3-002-22-002101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN SOLDER TAIL RA Original PDF
    800-V3-002-40-001101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN SURFACE MOUNT 2.54MM Original PDF
    800-V3-002-6B-002101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN PRESS FIT 2.54MM Original PDF
    800-V3-003-12-002101 Preci-Dip Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - CONN HDR 3POS 0.100 T/H Original PDF
    800-V3-003-20-001101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN SOLDER TAIL RA Original PDF
    800-V3-003-20-101101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN SOLDER TAIL RA 2.54MM Original PDF
    800-V3-003-22-002101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN SOLDER TAIL RA Original PDF
    800-V3-003-30-001101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN SURFACE MOUNT 2.54MM Original PDF
    800-V3-003-32-002101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN SURFACE MOUNT 2.54MM Original PDF
    800-V3-003-40-001101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN SURFACE MOUNT 2.54MM Original PDF
    800-V3-003-6B-002101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN PRESS FIT 2.54MM Original PDF
    800-V3-004-12-002101 Preci-Dip Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - CONN HDR 4POS 0.100 T/H Original PDF
    800-V3-004-20-001101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN SOLDER TAIL RA Original PDF
    800-V3-004-22-002101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN SOLDER TAIL RA Original PDF
    800-V3-004-30-001101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN SURFACE MOUNT 2.54MM Original PDF
    800-V3-004-32-002101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN SURFACE MOUNT 2.54MM Original PDF
    800-V3-004-40-001101 PRECI-DIP Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, PCB CONN SURFACE MOUNT 2.54MM Original PDF
    800-V3-005-12-002101 Preci-Dip Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - CONN HDR 5POS 0.100 T/H Original PDF
    ...

    800V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN Transistor 1A 800V to - 92

    Abstract: transistor -25 F07
    Text: TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 800V IC 1.5A VCE SAT Features ● High Voltage ● High Speed Switching 0.8V @ IC / IB = 1A / 0.25A Block Diagram Structure ● Silicon Triple Diffused Type


    Original     		PDF TS13003MV TS13003MVCT NPN Transistor 1A 800V to - 92 transistor -25 F07

    tsc13003

    Abstract: TSC13003H NPN Transistor 1A 800V to - 92 transistor 800V 1A TSC1300 NPN Transistor 1A 400V to - 92 TSC13 1.5A NPN power transistor TO-92
    Text: TSC13003H Preliminary High Voltage NPN Transistor TO-92 TO-126 Pin Definition: 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 800V IC 1.5A VCE SAT Features 0.8V @ IC / IB = 0.5A / 0.1A Block Diagram


    Original     		PDF TSC13003H O-126 TS13003HCT tsc13003 TSC13003H NPN Transistor 1A 800V to - 92 transistor 800V 1A TSC1300 NPN Transistor 1A 400V to - 92 TSC13 1.5A NPN power transistor TO-92

    APQ03SN80AB

    Abstract: MOSFET 800V 3A 800VVGS
    Text: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


    Original     		PDF APQ03SN80AB 00V/3A APQ03SN80AB-XXM0 APQ03SN80AB MOSFET 800V 3A 800VVGS

    fqt1n80

    Abstract: No abstract text available
    Text: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQT1N80TF fqt1n80

    datasheet of ic 555

    Abstract: datasheet ic 555 IC 555 800Volts
    Text: SC35VB80 REVERSE VOLTAGE - 800Volts FORWARD CURRENT - 35Amperes GLASS PASSIVATED 3 PHASE BRIDGE RECTIFIERS FEATURES SCVB ●Surge overload -350 amperes peak ●Low forward voltage drop 1.417 MAX 36.0 1.412 MAX (29.0) .217(5.5) .177(4.5) ●Mounting position :Any


    Original     		PDF SC35VB80 800Volts 35Amperes datasheet of ic 555 datasheet ic 555 IC 555 800Volts

    Untitled

    Abstract: No abstract text available
    Text: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R8005ANX O-220FM R1102A

    APT0406

    Abstract: APT0502
    Text: APTC80SK15T1G Buck chopper Super Junction MOSFET Power Module 5 11 6 Application • AC and DC motor control • Switched Mode Power Supplies Q1 Features • 7 8 NTC 3 4 VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C CR2 1 2 • • •


    Original     		PDF APTC80SK15T1G APT0406 APT0502

    d2508

    Abstract: D2504 transistor d2504 D2503 PC2503 PC2504 PC2508 PD2503 PD2504 PD2508
    Text: DIODE MODULE 250A/300 to 800V PC2503,PC2504,PC2508 PD2503,PD2504,PD2508 OUTLINE DRAWING FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS PC PD * Rectified For General Use


    Original     		PDF 50A/300 PC2503 PC2504 PC2508 PD2503 PD2504 PD2508 E187184 PC/D2503 PC/D2504 d2508 D2504 transistor d2504 D2503 PC2508 PD2508

    APT8014L2FLL

    Abstract: MAX7238
    Text: APT8014L2FLL 800V 52A 0.140Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8014L2FLL O-264 O-264 APT8014L2FLL MAX7238

    8114

    Abstract: APT12M80B APT12M80S MIC4452
    Text: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT12M80B APT12M80S 8114 APT12M80B APT12M80S MIC4452

    APT17F80B

    Abstract: APT17F80S MIC4452
    Text: APT17F80B APT17F80S 800V, 18A, 0.58Ω Max, trr ≤250ns N-Channel FREDFET TO -2 POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced


    Original     		PDF APT17F80B APT17F80S 250ns APT17F80B APT17F80S MIC4452

    APT8024B2VFR

    Abstract: APT8024B2VR APT8024LVR
    Text: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247 APT8024B2VR APT8024LVR

    APT22F80B

    Abstract: APT22F80S MIC4452 two switch forward converter
    Text: APT22F80B APT22F80S 800V, 23A, 0.43Ω Max, trr ≤260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original     		PDF APT22F80B APT22F80S 260ns APT22F80B APT22F80S MIC4452 two switch forward converter

    APT8015JVFR

    Abstract: APT8015
    Text: APT8015JVFR 44A 0.150Ω Ω 800V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8015JVFR OT-227 E145592 APT8015JVFR APT8015

    APT8043BLL

    Abstract: APT8043SLL
    Text: APT8043BLL APT8043SLL 800V POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8043BLL APT8043SLL O-247 O-247 unles84 APT8043BLL APT8043SLL

    7106

    Abstract: data sheet IC 7106 IL 7106 APT8014JFLL
    Text: APT8014JFLL 800V 42A 0.140Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8014JFLL OT-227 7106 data sheet IC 7106 IL 7106 APT8014JFLL

    APT8024JFLL

    Abstract: No abstract text available
    Text: APT8024JFLL 800V 29A 0.240Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8024JFLL OT-227 APT8024JFLL

    APT8075BVFR

    Abstract: No abstract text available
    Text: APT8075BVFR Ω 12A 0.750Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8075BVFR O-247 O-247 APT8075BVFR

    APT8052BFLL

    Abstract: APT8052SFLL
    Text: APT8052BFLL APT8052SFLL 800V 15A POWER MOS 7 R FREDFET 0.520Ω BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8052BFLL APT8052SFLL O-247 O-247 Ratin78 APT8052BFLL APT8052SFLL

    APT8018L2VFR

    Abstract: No abstract text available
    Text: APT8018L2VFR 800V 43A POWER MOS V FREDFET 0.180Ω L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8018L2VFR O-264 O-264 APT8018L2VFR

    VK 1760 H

    Abstract: SH80J SH80F1
    Text: HIGH-SPEED THYRISTOR SILICON DIFFUSED TYPE SH80 D, F,G,J, L 13A HIGH S PE ED A P P L I C A T I O N S . Unit in mm FEATURES: . Repetitive Peak Off-State Voltage V d RM -200 ~ 800V Repetitive Peak Reverse Voltage Vr r m . Average On-State Current It(AV)=80A


    OCR Scan     		PDF 15/is 00A//is 00V//is SH80D13A SH80F13A SH80G13A SH80L13A VK 1760 H SH80J SH80F1

    TOSHIBA THYRISTOR

    Abstract: No abstract text available
    Text: THYRISTOR SH20 KD,F,GtJ,L 21A SILICON DIFFUSED TYPE HIGH SPEED APPLICATIONS. Unit FEATURES: . Repetitive Peak Off-State Voltage V d R M j = 200 800V Repetitive Peak Reverse Voltage vrrm . Average On-State Current It(AV)=200A . Turn-Off Time tq=15^s (Max.)


    OCR Scan     		PDF 00A//is SH200D21A SH200F21A SH200G21A SH200J21A SH200L21A SH200J21Ate TOSHIBA THYRISTOR

    thyristor st 103

    Abstract: SH30J13A L13A SH30J TOSHIBA THYRISTOR SH30F SH30F13A
    Text: SH3 KD,F,G,H,J,L 13A HIGH-SPEED THYRISTOR SILICON DIFFUSED TYPE HIGH SPEED (FORKLIFT, ELECTRIC-CAR, CHOPPER, INVERTER) APPLICATIONS. Unit in m m FEATURES: . Repetitive Peak Off-State Repetitive Peak Reverse . Average On-State . Turn-Off . Gate =200 ^ 800v


    OCR Scan     		PDF 15/is 00A//iS 00V//is G-236. SH30D13A SH30F13A SH30G13A SH30H13A SH30J13A SH30L13A thyristor st 103 L13A SH30J TOSHIBA THYRISTOR SH30F

    A37 diode

    Abstract: No abstract text available
    Text: ^»litron PRODUCT DEVICES.INC. Se^ SÌSSin"' “Esr -"°li£l'Ä?,ü,?KSI N-CHANNEL ENHANCEMENT MQS FET 800V , 1 . 6A , 7 . 8 0 ABSOLUTE MAXIMUM RATINGS PARAMETER UN IT S SYMBOL Drain- so ur ce Vo 1t . 1 Drain-Gate Voltage VDSS BOO Vdc (RGS=1.0Mo) (1)


    OCR Scan     		PDF SDFE22 SDFE22 -25-c REL10/93 A37-1 A37 diode