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    Black Box Corporation EY800-MM-25PAK

    Add"l Terminated Wires, Mm |Black Box EY800-MM-25PAK
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    800MM2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 8Mx72 SDRAM & 1Mx8 Flash Multi-Chip Package Optimum Density and Performance in one Package WEDPNF8M721V-XBX • Designed to complement PowerPC 750 and high performance memory controllers see page 2 for typical application block diagram • PACKAGE: 32x25mm, 255 Plastic Ball Grid Array (PBGA), 800mm2


    Original     		8Mx72 WEDPNF8M721V-XBX 750TM 32x25mm, 800mm2 265mm2 54mm2 1379mm2 64MBytes PDF

    W3E16M72S-XBX

    Abstract: W3E32M72S-XBX
    Text: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply


    Original     		W3E16M72S-XBX 16Mx72 W3E16M72S-XBX W3E32M72S-XBX PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of


    Original     		WEDPN16M72V-XBX 16Mx72 128MByte 864-bit 100MHz, 125MHz 100MHz PDF

    W3E64M72S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply


    Original     		W3E64M72S-XBX 64Mx72 333Mbs 512MByte W3E64M72S-ESB W3E64M72S-XBX PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		WEDPN8M72V-XBX 8Mx72 125MHz WEDPN8M72V-XBX 64MByte 512Mb) 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN16M72V-XBX HI-RELIABILITY PRODUCT 16Mx72 Synchronous DRAM *ADVANCED FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		WEDPN16M72V-XBX 16Mx72 125MHz 128MByte 864-bit 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		W3E64M72S-XSBX 64Mx72 333Mbs* 512MByte 333Mbs PDF

    WEDPN16M72V-XBX

    Abstract: WEDPN8M72V-XBX 54TSOP WEDPN16M72-XBX
    Text: 16M x 72 SDRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPN16M72V-XBX* Designed to complement PowerPCTM 750/755 and high performance memory controllers see other side for typical application block diagram Performance Features • SDRAM CAS Latency = 3 (125MHz), 2 (100MHz) or 3 (100MHz), 2 (75MHz)


    Original     		WEDPN16M72V-XBX* 125MHz) 100MHz) 75MHz) WEDPN8M72V-XBX* 755sbd WEDPN16M72-XBX MIF2004 WEDPN16M72V-XBX WEDPN8M72V-XBX 54TSOP PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		WEDPN8M72V-XBX 8Mx72 125MHz 64MByte 512Mb) 432-bit 100MHz PDF

    FD19

    Abstract: BY12 FA147
    Text: WEDPNF8M722V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* • 3.3 Volt for Read and Write Operations FEATURES ■ 1,000,000 Erase/Program Cycles ■ Package: • 275 Plastic Ball Grid Array PBGA , 32mm x 25mm


    Original     		WEDPNF8M722V-XBX 8Mx72 WEDPNF8M722V-XBX 16KByte, 32KByte, 64KBytes 100MHz 100ns FD19 BY12 FA147 PDF

    BUSBAR calculation free

    Abstract: EN27779 BUSBAR calculation earth BUSBAR calculation online ups battery charger project 3 phase BUSBAR IEC 60439-1 62040-2 62040-1 ral 7035
    Text: SPECIFICATION FOR TYPE TESTED, LOW-VOLTAGE CRITICAL POWER SYSTEM General 1. 1.1 1.2.1 1.2.2 1.3. 1.3.1 1.3.2 1.3.3 1.3.4 1.3.5 2 3 3.1.1 3.1.2 3.1.3 3.1.4 3.1.5 3.1.6 3.1.7 3.1.8 3.1.9 3.2 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 General Characteristics Switchboard


    Original     		Windows/95, Windows/98, BUSBAR calculation free EN27779 BUSBAR calculation earth BUSBAR calculation online ups battery charger project 3 phase BUSBAR IEC 60439-1 62040-2 62040-1 ral 7035 PDF

    2907 TRANSISTOR

    Abstract: XC6420 USP-6B04
    Text: XC6420 Series ETR0352-006 150mA Small Dual LDO Regulator with ON/OFF Switch •GENERAL DESCRIPTION The XC6420 series is a small dual CMOS LDO regulator with 2-channel 150mA outputs. The series features high speed, high accuracy, high ripple rejection and low dropout voltage. The series is capable of high density board installation by the


    Original     		XC6420 ETR0352-006 150mA 2907 TRANSISTOR USP-6B04 PDF

    insulated cable 240 mm2

    Abstract: No abstract text available
    Text: PRESENCE ∙ PRODUCTS ∙ PERFORMANCE ∙ PEOPLE O n e C o m pa n y — C o n n ec tin g th e wo r ld Powerful Presence ∙ Products ∙ Performance ∙ People With more than 13,000 associates on six continents, General Cable is a global leader in the development, design, manufacture, marketing and


    Original     		-R0912 insulated cable 240 mm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 電 力 事 業 部 Power Cable Division 概 況 電力事業部は，66kVから500kVまでの超高圧地中あるいは海底送電用の電力ケーブルと，その機器部品を 取扱っており，電力会社の基幹電力輸送をになう送電システムを構成する製品群を製造，布設している．こ


    Original     		500kVã PDF

    Infineon X-GOLD 110

    Abstract: Infineon X-GOLD 618 infineon x-gold xmm 6180 X-GOLD 618 MIPI CSI-2 Parallel X-GOLD 110 smarti UE MIPI csi-2 MIPI csi
    Text: Product Brief X-GOLD 618 TM Cost efficient HSPA Baseband for Multimedia enabled Cellular Phones Main Features THE Infineon X-GOLD 618 is a cellular system on chip comprising the 2G/3G digital and analog baseband and the power management functions monolithically integrated in 65nm CMOS technology. It is Infineon’s 3rd


    Original     		384kbps MSC33 B153-H9353-G1-X-7600 NB09-1000 Infineon X-GOLD 110 Infineon X-GOLD 618 infineon x-gold xmm 6180 X-GOLD 618 MIPI CSI-2 Parallel X-GOLD 110 smarti UE MIPI csi-2 MIPI csi PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN8M72V-XBX 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n Single 3.3V ±0.3V power supply n Fully Synchronous; all signals registered on positive


    Original     		8Mx72 125MHz WEDPN8M72V-XBX WEDPN8M72V-XBX 64MByte 512Mb) 100MHz 100MHz, PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPND16M72S-XBX White Electronic Designs 16Mx72 DDR SDRAM Preliminary* FEATURES BENEFITS n High Frequency = 200, 250, 266MHz n 40% SPACE SAVINGS n Package: n Reduced part count n Reduced I/O count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n 2.5V ±0.2V core power supply


    Original     		16Mx72 266MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W364M72V-XSBX PRELIMINARY* 64Mx72 Synchronous DRAM FEATURES BENEFITS High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 3.3V ±0.3V power supply for core and I/Os Fully Synchronous; all signals registered on positive


    Original     		64Mx72 133MHz W364M72V-XSBX W364M72V-XSBX PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM FEATURES BENEFITS „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		64Mx72 333Mbs* W3E64M72S-XSBX 333Mbs PDF

    7812

    Abstract: VCCQ15
    Text: White Electronic Designs W3E32M72S-XBX ADVANCED* 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266MHz 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply


    Original     		32Mx72 266MHz Program40 W3E32M72S-ESB W3E32M72S-XBX 7812 VCCQ15 PDF

    W3E16M72S-XBX

    Abstract: W3E32M72S-XBX
    Text: W3E16M72S-XBX White Electronic Designs 16Mx72 DDR SDRAM FEATURES „ DDR SDRAM Rate = 200, 250, 266 „ Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ BENEFITS 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible)


    Original     		W3E16M72S-XBX 16Mx72 W3E16M72S-XBX W3E32M72S-XBX PDF

    W3E32M72S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES „ Data rate = 200, 250, 266, 333Mbs „ Package: BENEFITS • 219 Plastic Ball Grid Array PBGA , 32 x 25mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)


    Original     		W3E32M72S-XBX 32Mx72 333Mbs 333Mbs W3E32M72S-XBX PDF

    WEDPND16M72S-XBX

    Abstract: WEDPND8M72S-XBX 8M16M
    Text: 8M/16M x 72 DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPND8M72S-XBX WEDPND16M72S-XBX VA N CE DDR SDRAM Speed = 266, 250, 200MHz Core Supply Voltage = 2.5V ± 0.2V I/O Supply Voltage = 2.5V ± 0.2V Bidirectional data strobe DQS per byte


    Original     		8M/16M WEDPND8M72S-XBX WEDPND16M72S-XBX 200MHz x64/x72 MIF2028 WEDPND16M72S-XBX WEDPND8M72S-XBX 8M16M PDF

    AS4DDR16M72PBG

    Abstract: AS4DDR32M72PBG W3E16M72S-XBX E1-E16
    Text: i PEM 1.2 G b SDRAM-DDR Gb Austin Semiconductor, Inc. AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count


    Original     		AS4DDR16M72PBG 16Mx72 333Mbps M72-8/XT AS4DDR16M72-10/XT 219-PBGA AS4DDR16M72PBG AS4DDR32M72PBG W3E16M72S-XBX E1-E16 PDF