M01 8-pin
Abstract: FPT-8P-M01
Text: SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 8 PIN PLASTIC FPT-8P-M01 8-pin plastic SOP FPT-8P-M01 8-pin plastic SOP (FPT-8P-M01) Lead pitch 1.27 mm Package width x package length 5.3 × 6.35 mm Lead shape Gullwing Sealing method Plastic mold
|
Original
|
FPT-8P-M01
FPT-8P-M01)
F08002S-c-6-7
M01 8-pin
FPT-8P-M01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 8 PIN CERAMIC To Top / Package Lineup / Package Index FPT-8C-A01 8-pin ceramic SOP Lead pitch 50 mil Lead shape Gullwing Sealing method Metal seal FPT-8C-A01 8-pin ceramic SOP (FPT-8C-A01) 5.45(.215)
|
Original
|
FPT-8C-A01
FPT-8C-A01)
F08003SC-2-2
FUJ-A01)
|
PDF
|
M01 8-pin
Abstract: FPT-8P-M01
Text: SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 8 PIN PLASTIC To Top / Package Lineup / Package Index FPT-8P-M01 EIAJ code :∗SOP008-P-0300-1 8-pin plastic SOP Lead pitch 50 mil Nominal dimensions 300 mil Standard Conforms with EIAJ:TYPE II
|
Original
|
FPT-8P-M01
OP008-P-0300-1
FPT-8P-M01)
F08002S-4C-4
M01 8-pin
FPT-8P-M01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 8 PIN PLASTIC SOP 225 mil 8 5 detail of lead end P 4 1 A H F I G J S B C E D M L N K M NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS A 5.2 +0.17 −0.20 B 0.78 MAX. C 1.27 (T.P.)
|
Original
|
S8GM-50-225B-5
|
PDF
|
APM4463
Abstract: APM4463K STD-020C 555 sop-8
Text: APM4463K P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-10A , RDS ON =12mΩ(typ.) @ VGS=-4.5V RDS(ON)=18mΩ(typ.) @ VGS=-2.5V • • • • Super High Dense Cell Design SOP − 8 Reliable and Rugged SOP-8 Package (1, 2, 3) S S S Lead Free Available (RoHS Compliant)
|
Original
|
APM4463K
-20V/-10A
APM4463
APM4463
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
APM4463K
STD-020C
555 sop-8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 16-PIN PLASTIC SOP [9.53 mm 375 mil ] 16 9 detail of lead end P 1 8 A H F G I J S B L C D M M N K S E NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS A 10.0±0.2 B 0.78 MAX. C
|
Original
|
16-PIN
P16GM-50-375B-5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 16-PIN PLASTIC SOP 9.53 mm (375 16 9 detail of lead end P 1 8 A F H G I J S B L C N K D M S M E NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS A 11.73 MAX. B 1.42 MAX. C 1.27 (T.P.)
|
Original
|
16-PIN
P16GM-50-375A-4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 14 PIN PLASTIC SOP 225 mil 14 8 detail of lead end P 1 7 A H F J I G S C D B L N K M M E NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS A 10.2±0.26 B 1.42 MAX. C 1.27 (T.P.)
|
Original
|
S14GM-50-225B,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HN62328B Series Preliminary 8M 1M x 8-b tt M ask RO M • S1E O ESC B m O H » " ', ',< ,b S n 3 H ITA C H I/ ‘H” 7 7 5 " 378 ■ ■ Access Time 150 ns 200 ns 150ns 200 ns Package 32-pin Plastic DIP (DP-32) 32-lead Plastic SOP (FP-32D) PIN DESCRIPTION
|
OCR Scan
|
HN62328B
150ns
32-pin
DP-32)
32-lead
FP-32D)
HN62328BP
HN62328BF
HN62328BP-15
HN62328BP-20
|
PDF
|
APM9945
Abstract: No abstract text available
Text: APM9945K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • 60V/3A, RDS ON =100mΩ(typ.) @ VGS = 10V RDS(ON) =120mΩ(typ.) @ VGS = 4.5V • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) SOP − 8
|
Original
|
APM9945K
APM9945
conta0-2000
|
PDF
|
apm7328
Abstract: APM7328K STD-020C
Text: APM7328K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/7A, RDS ON = 21mΩ(typ.) @ VGS = 10V RDS(ON) = 28mΩ(typ.) @ VGS = 4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant)
|
Original
|
APM7328K
APM7328
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
apm7328
APM7328K
STD-020C
|
PDF
|
APM4812
Abstract: APM4812K STD-020C
Text: APM4812K N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/8A, RDS ON = 18mΩ(typ.) @ VGS= 10V • • • RDS(ON)= 26mΩ(typ.) @ VGS= 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOP − 8
|
Original
|
APM4812K
APM4812
APM4812
MIL-STD-883D-2003
MIL-STD-883D-1005
JESD-22-B
MIL-STD-883D-1011
MIL-STD-883D-3015
100mA
APM4812K
STD-020C
|
PDF
|
APM4953
Abstract: APM4953K
Text: APM4953K Dual P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-4.9A , RDS ON =53mΩ(typ.) @ VGS=-10V RDS(ON)=80mΩ(typ.) @ VGS=-4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant)
|
Original
|
APM4953K
-30V/-4
APM4953
APM49assification
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
APM4953K
|
PDF
|
APM4953A
Abstract: APM4953
Text: APM4953AK Dual P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-4.9A , RDS ON =53mΩ(typ.) @ VGS=-10V RDS(ON)=80mΩ(typ.) @ VGS=-4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant)
|
Original
|
APM4953AK
-30V/-4
APM4953A
APM4953
|
PDF
|
|
|
apm9946
Abstract: apm*9946 APM9946K 27BSC STD-020C
Text: APM9946K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • 60V/5A, RDS ON =38mΩ(typ.) @ VGS = 10V RDS(ON) =55mΩ(typ.) @ VGS = 4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant)
|
Original
|
APM9946K
APM9946
APM9946
apm*9946
APM9946K
27BSC
STD-020C
|
PDF
|
APM4810
Abstract: APM4810K 27BSC STD-020C APM48
Text: APM4810K N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/11A, RDS ON = 12mΩ(typ.) @ VGS = 10V RDS(ON) =18mΩ(typ.) @ VGS = 4.5V • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOP − 8
|
Original
|
APM4810K
0V/11A,
APM4810
APM4810
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
APM4810K
27BSC
STD-020C
APM48
|
PDF
|
APM4230K
Abstract: STD-020C
Text: APM4230K N-Channel Enhancement Mode MOSFET Pin Description Features • • • • • • D 25V/13.5A, RDS ON =6mΩ(typ.) @ VGS=10V RDS(ON)=7.5mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged SOP-8 Package Lead Free Available (RoHS Compliant)
|
Original
|
APM4230K
5V/13
APM4230K
STD-020C
|
PDF
|
APM4220K
Abstract: STD-020C
Text: APM4220K N-Channel Enhancement Mode MOSFET Features • • • • • • Pin Description D 25V/12A, RDS ON =7.5mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged SOP-8 Package Lead Free Available (RoHS Compliant)
|
Original
|
APM4220K
5V/12A,
APM4220K
STD-020C
|
PDF
|
APM4472
Abstract: A102 APM4472K STD-020C
Text: APM4472K N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/12A, RDS ON = 7.5mΩ(typ.) @ VGS= 10V • • • • RDS(ON)= 10.5mΩ(typ.) @ VGS= 4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant)
|
Original
|
APM4472K
0V/12A,
APM4472
APM4472
A102
APM4472K
STD-020C
|
PDF
|
apm1110
Abstract: code diode transient APM1110K
Text: APM1110K N-Channel Enhancement Mode MOSFET Features • Pin Configuration D D 100V/2.7A, D D RDS ON =140mΩ (typ.) @ VGS=10V RDS(ON)=185mΩ (typ.) @ VGS=4.5V • • • S S ESD Protected S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available
|
Original
|
APM1110K
00V/2
APM1110
JESD-22,
code diode transient
APM1110K
|
PDF
|
APM9435
Abstract: APM9435K STD-020C
Text: APM9435K P-Channel Enhancement Mode MOSFET Pin Description Features • D -30V/-4.6A , RDS ON =52mΩ(typ.) @ VGS=-10V RDS(ON)=80mΩ(typ.) @ VGS=-4.5V • • • D D S S Super High Dense Cell Design S G Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant)
|
Original
|
APM9435K
-30V/-4
APM9435
APM9435
APM9435K
STD-020C
|
PDF
|
APM9428
Abstract: APM9428K STD-020C
Text: APM9428K N-Channel Enhancement Mode MOSFET Pin Description Features • D 20V/6A , RDS ON =25mΩ(typ.) @ VGS=4.5V RDS(ON)=50mΩ(typ.) @ VGS=2.5V • • • D D S S Super High Dense Cell Design S G Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant)
|
Original
|
APM9428K
APM9428
APM9428
APM9428K
STD-020C
|
PDF
|
apm9948
Abstract: APM9948K A102
Text: APM9948K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • D D 60V/4A, D D RDS ON = 60mΩ(typ.) @ VGS = 10V RDS(ON) = 72mΩ(typ.) @ VGS = 4.5V • • • S Super High Dense Cell Design G S Reliable and Rugged G Top View of SOP − 8 Lead Free and Green Devices Available
|
Original
|
APM9948K
apm9948
APM9948K
A102
|
PDF
|
APM73
Abstract: APM7336
Text: APM7336K N-Channel Enhancement Mode MOSFET Features • Pin Description D1 D1 D2 D2 30V/9A, RDS ON =18mΩ (Max.) @ VGS =10V • • • RDS(ON) =28mΩ (Max.) @ VGS =4.5V S1 G1 S2 G2 Super High Dense Cell Design Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available
|
Original
|
APM7336K
APM7336
JESD-22,
APM73
|
PDF
|
