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BFG90A

Abstract: BFG51 Q017b BFG90 SOT-103 SOT103 transistor BT 136
Text: N AMER PHILIPS/DISCRETE 25 E bt.53131 Q Q 1 7 t 7 Î D Q • BFG51 T *- 31- I S~ P-N-P 2 GHz W IDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in C A T V and M A T V systems, up to 2 GHz.