BUS12
Abstract: BUS12A max 1988 TO3 philips
Text: N AMER PHI L I P S / D I S C R E T E b t ^ T B l 0010717 JU i l l 3 • BUS12 BUS12A SSE D I T - 3 3 - / J SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistors in a TO -3 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.
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T-33-/J
BUS12
BUS12A
BUS12
BUS12A
max 1988
TO3 philips
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BUX98A
Abstract: BUX98 BUX98-BUX98A TO3 philips
Text: 11 N AMER PHILIPS/DISCRETE ESE » ^53^31 GOnCHB 7 BUX98 BUX98A T -3 3 -/5 " StLICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envefope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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BUX98
BUX98A
T-33-15
7Z82946
7Z82949
BUX98A
BUX98-BUX98A
TO3 philips
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PDF
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BUS23
Abstract: t-33-15 BISCR BUS23B BUS23C
Text: [[ N AMER P H I L I P S / D I S C R E T E asE D bbSB'IBl C 018751 3 • J BUS23 SERIES s. -r-2 3 -1 6 * SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in aTO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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bb53131
BUS23
T--23-I6"
BUS23B
BUS23B
BUS23C
BUS23B;
BUS23C.
t-33-15
BISCR
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PDF
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BUS11
Abstract: BUS11A TO3 philips T-33-73
Text: N AMER PHILIPS/DISCRETE 2SE D • [I b b S 3 T 3 1 001Ö70T M I '' BUS11 BUS11A F - 33-/3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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bbS3T31
BUS11
BUS11A
T-33-13
BUS11
BUS11A
TO3 philips
T-33-73
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PDF
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BUX46
Abstract: BUX46A
Text: N AMER PHILIPS/DISCRETE 2SE D bb53' 1 OOnOHS 7 I BUX46 BUX46A T - 3 3 - J 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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BUX46
BUX46A
T-33-J3
BUX46A
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PDF
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FZH 111
Abstract: fzh 101 BUX47 BUX47A
Text: I J ESE D N AMER P H I L I P S / D I S C R E T E • ^ 5 3 1 3 1 OaiTG53 h ■ BUX47 BUX47A T~- 3 3 - I S SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a T O -3 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.
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OaiTG53
BUX47
BUX47A
FZH 111
fzh 101
BUX47A
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