transistor wm
Abstract: OC172 AF266 BLV10 TRANSISTOR K 135 J 50 7Z77760
Text: PHILIPS INTERNATIONAL bSE D • 711Dö2b □ D b 5 7 clö T7S J IPHIN BLV10 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and
|
OCR Scan
|
Db57clÃ
BLV10
76-j16
7Z78515
transistor wm
OC172
AF266
BLV10
TRANSISTOR K 135 J 50
7Z77760
|
PDF
|
BLV10
Abstract: RF POWER TRANSISTOR NPN vhf
Text: N AMER PHILIPS/DISCRETE bRE D • bb53^3L OOEB'iOl E m IAPX BLV10 V.H.F. POWER TRANSISTOR N-P-N silico n planar e p ita xia l tra n sisto r intended fo r use in ciass-A, B and C operated m ob ile, h .f. and v.h.f. tran sm itte rs w ith a nom inal supply voltage o f 13,5 V . T he tran sisto r is resistance stabilized and
|
OCR Scan
|
BLV10
76-j16
7Z78515
BLV10
RF POWER TRANSISTOR NPN vhf
|
PDF
|