KS74HCT
Abstract: No abstract text available
Text: SAMSUNG SEMICO NDUCT OR INC DS KS54HCTLS OOQ KS74HCTLS D E | 7TL414E OOQt.451 Ô | 51 D 3-Line to 8-Line Decoders/Domultiplexers FEATURES DESCRIPTION • Designed specifically or highspeed memory decoders end data transmission systems • Incorporates 2 enable Inputs to simplify cascading
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7TL414E
KS54HCTLS
KS74HCTLS
7Tb414S
90-XO
14-Pin
KS74HCT
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KM68V257CP15
Abstract: KM68V257CP-15 KM68V257CJ-15 KM68V257CP-17 KM68V257C KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CJ-17 KM68V257CP20
Text: KM68V257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 30 mA (Max.) (CMOS) : 100 |iA (Max.) Operating KM68V257C-15 : 90 mA (Max.)
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KM68V257C
32Kx8
KM68V257C-15
KM68V257C-17
KM68V257C-20
KM68V257CP
28-DIP-300
KM68V257CJ
28-SOJ-300
KM68V257C
KM68V257CP15
KM68V257CP-15
KM68V257CJ-15
KM68V257CP-17
KM68V257C-15
KM68V257C-17
KM68V257CJ
KM68V257CJ-17
KM68V257CP20
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM732V596A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • The K M 732V596A/L is a 1,048,576-bit Synchronous S ta tic R andom A c c e s s M em ory d e sig ned fo r high
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KM732V596A/L
32Kx32
732V596A/L
576-bit
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KM718V687-8
Abstract: No abstract text available
Text: PRELIMINARY KM718V687 64Kx18 Synchronous SRAM 64Kx18 Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION. • Synchronous Operation. • On-Chip Address Counter. • Write Self-Timed Cycle. • On- Chip Address and Control Registers. • Single 3.3V± 5% Power Supply.
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KM718V687
64Kx18
100-Pin
KM718V687
7TL414E
KM718V687-8
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KM681001-25
Abstract: KM681001-35 KM681001-20 KM681001J
Text: KM681001 CMOS SRAM 128Kx 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max) Operating KM681001-20 : 170 mA(Max.) KM681001-25 : 150 mA(Max.)
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KM681001
128Kx
KM681001-20
KM681001-25
KM681001-35
KM681001P:
32-DIP-400
KM681001J:
32-SOJ-4QO
KM681001
KM681001-25
KM681001-35
KM681001-20
KM681001J
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D KM416C256/L/SL • 7^4142 DD1343Q Q24 I SHGK CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its
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KM416C256/L/SL
DD1343Q
KM416C256/USL
130ns
KM416C256/USL-8
150ns
KM416C256/L/SL-10
KM416C256/USL-7
100ns
180ns
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Untitled
Abstract: No abstract text available
Text: -c u l l i l i» K S 57C 2504 4-Bit CMOS Microcontroller ELECTRONICS Data Sheet DESCRIPTION The KS57C2504 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With up to 320-dot LCD direct-drive capability, 8-bit timer/counter, serial I/O, and comparator, the KS57C2504 offers an
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KS57C2504
320-dot
0011B.
KS57C2504
0000B.
1001B,
7Tb4142
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km29n16000at
Abstract: c60h - dc
Text: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
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KM29N16000AT/R
250us
ib4142
km29n16000at
c60h - dc
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Untitled
Abstract: No abstract text available
Text: KM44C4004B S CMOS D R AM ELECTR O NICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4004B
KM44C4004BS
D034S11
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dc/SMD ad34a
Abstract: No abstract text available
Text: K M 4 4 V 16004AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. ,
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16004AK
16Mx4
KM44V16004AK
7TL4142
7Tb414B
dc/SMD ad34a
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Untitled
Abstract: No abstract text available
Text: KM4 1 V 1 6 0 0 0 B S CMOS DRAM ELECTRONICS 16M x 1 Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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16Mx1
KM41V16000BS
GQ340flb
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T4 1060
Abstract: KS57C4004 sbr 1033 BSC23
Text: KS57C4004 4-BIT CMOS Microcontroller ELECTRONICS Ploduct specification OVERVIEW The KS57C4004 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit development approach, SAM4 Samsung Arrangeable Microcontrollers . With an A/D converter, LED
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KS57C4004
KS57C4004
42-pin
44-pin
T4 1060
sbr 1033
BSC23
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Untitled
Abstract: No abstract text available
Text: KM681001 CMOS SRAM 128Kx 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. The KM681001 Is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 131,072 words Standby (TTL) : 40 mA(Max.)
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KM681001
128Kx
KM681001
576-bit
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Untitled
Abstract: No abstract text available
Text: KM48C2000BS CMOS D R A M ELECTRONICS 2M x 8 Bit C M O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily o1 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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KM48C2000BS
16Mx4,
512Kx8)
GG3S251
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GD341
Abstract: taa 723 KM44C1000D KM44V1000D km44c1000dj-7
Text: KM44C1000DJ CMOS DRAM ELE C T R O N IC S 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44C1000DJ
003mM?
GD341
taa 723
KM44C1000D
KM44V1000D
km44c1000dj-7
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Untitled
Abstract: No abstract text available
Text: K M 4 16 V2 5 6 D J CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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256Kx16
KM416V256DJ
0G322tM
QG322bS
7Tb4142
00322bfci
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Untitled
Abstract: No abstract text available
Text: KSC3569 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING LOW COLLECTOR SATURATION VOLTAGE SPECIFIED OF REVERSE BIASED SOA WITH INDUCTIVE LOADS ABSOLUTE MAXIMUM RATINGS <Ta=250 C haracteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage
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KSC3569
7TL414E
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KM684000L
Abstract: ha1723
Text: CMOS SRAM KM684000L / L-L 5 12Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns Max. • Low power dissipation - Standby(CMOS) : 550^W (M ax.) L Version :11 0|iW (M ax.) L-L Version - Operating : 385mW /MHz(Max.)
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KM684000L
512Kx8
550nW
385mW/MHz
KM684000LP/LP-L
600mil)
KM684000LG/LG-L
525mil)
KM684000LT/LT-L
400mil)
ha1723
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44V4100
Abstract: No abstract text available
Text: KM44V4100BK CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily ol 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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KM44V4100BK
16Mx4,
512Kx8)
7TL414E
44V4100
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