7TE1S37 Search Results

IRFP150

Abstract: C4023 GC527 IRFP150FI c2814 TC08 Tc03s
Contextual Info: un TYPE IRFP150 IRFP150FI 7 ^ 5 3 7 00457E7 235 • SGTH SGS-THOMSON IRFP150 IRFP150FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V d ss RüS on Id 100 V 100 V < 0.055 Q < 0.055 n 40 A 23 A . Q . . TYPICAL RDS(on) = 0.035 AVALANCHE RUGGED TECHNOLOGY

Contextual Info: un TYPE IRFP150 IRFP150FI 7 ^ 5 3 7 00457E7 235 • SGTH SGS-THOMSON IRFP150 IRFP150FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V d ss RüS on Id 100 V 100 V < 0.055 Q < 0.055 n 40 A 23 A . Q . . TYPICAL RDS(on) = 0.035 AVALANCHE RUGGED TECHNOLOGY

Contextual Info: 3DE D f Z 7 ^ 7 # • S G 7^237 S - T H O s M 0030^01 fi ■ S O N fL K g T F lO K i B C 3 9 3 S G S-THOMSON HIGH VOLTAGE AMPLIFIER DESCRIPTIO N The BC393 is a silicon planar epitaxial PNP trans­ istor in Jedec TO-18 metal case, designed for ge­ neral purpose high-voltage and video amplifier ap­

Contextual Info: SGS-THOMSON ST9020 ST9027, ST9028 IL[ 12/16K ROM HCM O S MCUs Register oriented 8/16 bit CORE with RUN, WFI and HALT modes Minimum instruction cycle time : 500ns 12MHz internal Internal Memory: ROM RAM ST9020 12K ST9027 16K 256 ST9028 16K 256 224 general purpose registers available as RAM,

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Abstract: 1N914 M28F256 Scans-005192 A0-A14
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns • LOW POWER CONSUMPTION - Standby Current: 100pA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10us (PRESTO F ALGORITHM) ■ ELECTRICAL CHIP ERASE IN 1s RANGE