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    LMB Heeger Inc TB4-14-Black Textured

    Racks & Rack Cabinet Accessories UNI-PAC Top or Bottom Panel 3.75 x 13.875 x inch Black (Textured)
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    LMB Heeger Inc TB4-14-Blue

    Racks & Rack Cabinet Accessories UNI-PAC Top or Bottom Panel 3.75 x 13.875 x inch Blue
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    LMB Heeger Inc TB4-14-Black TexturedPAIR

    Racks & Rack Cabinet Accessories UNI-PAC Top or Bottom Panel (Pair) 3.75 x 13.875 x inch Black (Textured)
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    Mouser Electronics TB4-14-Black TexturedPAIR
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    LMB Heeger Inc TB4-14-BluePAIR

    Racks & Rack Cabinet Accessories UNI-PAC Top or Bottom Panel (Pair) 3.75 x 13.875 x inch Blue
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    Mouser Electronics TB4-14-BluePAIR
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    7TB414B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    01-I04

    Abstract: KM641001A KM641001A-15 KM641001A-20
    Text: PRELIMINARY KM641001A CMOS SRAM 256K x 4 B it With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001A KM641001A-15 KM641001A-17 KM641001A-20 KM641001AJ 28-SQJ-400 KM641001A 576-bit OOPm53 01-I04 KM641001A-15 KM641001A-20

    KM44C4104bk

    Abstract: cd-rom circuit diagram
    Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM44C4 KM44C4104BK 7Tbm42 0034bb2 KM44C4104bk cd-rom circuit diagram

    gd243

    Abstract: No abstract text available
    Text: KM29N32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte


    OCR Scan     		PDF KM29N32000TS/RS 250us gd243

    KM44V4004BS

    Abstract: irf ddt D0350
    Text: KM44 V 4 0 0 4 B S CMOS DR A M ELECTRONICS 4 M x4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF 16Mx4, 512Kx8) KM44V4004BS 7Tb414B D0350fl3 KM44V4004BS irf ddt D0350

    asea EH 9-10

    Abstract: J 6920 A ite 8892 7420 pin configuration st 9318 KS8805BD 7809 A PI 505 7809 ct 8500-29 B KS8805B
    Text: KS8805B UNIVERSAL PROGRAMMABLE PLL INTRODUCTION 1S-DIP-300A The KS8805B is a superior low power-programmable dual frequency synthesizer PLL which can be used in high performance CT-1 cord­ less phone system with frequency range under 60 MHz in ail over the


    OCR Scan     		PDF KS8805B KS8805B 16-DIP-300A 16-SOP-225 16-DIP-300A KS8805BD 455KHZ 25KHZ) asea EH 9-10 J 6920 A ite 8892 7420 pin configuration st 9318 7809 A PI 505 7809 ct 8500-29 B

    dram zip

    Abstract: KM44C256D KM44C256
    Text: KM44C256D CMOS DRAM 256K x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -6, -7 or -8 , power consumption (Normal


    OCR Scan     		PDF KM44C256D 256Kx4 KM44C256D/D-L D0S01S0 dram zip KM44C256D KM44C256

    3hM22

    Abstract: pin configuration of 8251 KM64BV4002J-12 KM64BV4002J-15
    Text: KM64BV4002 CMOS SRAM 1Mx4Bit With / OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12 160mA KM64BV4002J-13 KM64BV4002J-15 KM64BV4002J 32-SOJ-4QO KM64BV4002 304-bit 3hM22 pin configuration of 8251

    KM44C4100BS

    Abstract: BC3 csr data sheet tsop 138 TSOP 173 g KM44C4100B N300N 3bm42 512Kx8 bit
    Text: KM44C4100BS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


    OCR Scan     		PDF KM44C4100BS 34STB KM44C4100BS BC3 csr data sheet tsop 138 TSOP 173 g KM44C4100B N300N 3bm42 512Kx8 bit

    17N55

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS SSH17N60/55 FEATURES • L o w e r R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysiiicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSH17N60/55 SSH17N60 SSH17N55 17N55

    Untitled

    Abstract: No abstract text available
    Text: K M 4 1C 4 0 0 0 D J CMOS DRAM ELECTRONICS 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM41C4000DJ 0034D25 7Tb4142 D03402fci

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A/AL CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly


    OCR Scan     		PDF KM616V1002A/AL KM616V1002A/AL-12 KM616V1002A/AL-15 KM616V1002A/AL-17 KM616V1002A/AL-20 Pi-400 44-TSOP2-400F 003124b

    Untitled

    Abstract: No abstract text available
    Text: KM48V514DT CMOS DRAM ELECTRONICS 5 1 2 K x 8 B i t C M O S Dynamic R A M with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF KM48V514DT 512Kx8 16Mx4, 512Kx8) 7Tb414B 00357b0

    dc/SMD ad34a

    Abstract: No abstract text available
    Text: K M 4 4 V 16004AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. ,


    OCR Scan     		PDF 16004AK 16Mx4 KM44V16004AK 7TL4142 7Tb414B dc/SMD ad34a

    MARKING 9AB

    Abstract: 9AB TRANSISTOR Code 9CB BC859 BC846 BC856 BC860 sot 23 mark 9CB
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC859, BC860 • Complement to BC846 . BC8S0 SO T -2 3 ABSOLUTE MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF BC856/857/858/859/860 BC859, BC860 BC846 BC856 BC857/860 BC858/859 MARKING 9AB 9AB TRANSISTOR Code 9CB BC859 BC846 BC856 BC860 sot 23 mark 9CB

    KM28C64B

    Abstract: No abstract text available
    Text: SAM SUN G E L E C T R O N I C S INC b?E D • TibmMZ □□Ibô'ïE 777 H S M â K PRELIMINARY KM28C64B/KM28C65B CMOS EEPROM 8 K x 8 Bit C M O S Electrically Erasable PR O M FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64B/65B: Commercial


    OCR Scan     		PDF KM28C64B/KM28C65B KM28C64B/65B: KM28C64B/65BI: KM28C65B) 64-Byte 1S55HX 1555H KM28C64B

    mask rom 4M

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » DG17GDÔ b l 3 KM23C41 OOB G/FP SriGK CMOS MASK ROM 4M-Bit (512K x 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.)


    OCR Scan     		PDF DG17GDÃ KM23C41 8/256K 120ns 50/iA 40-pin KM23C4100B 7Tb414B mask rom 4M

    Untitled

    Abstract: No abstract text available
    Text: KM48C514B, KM48V514B CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF KM48C514B, KM48V514B 512Kx8

    Untitled

    Abstract: No abstract text available
    Text: KM29N16000AR Fl ash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass


    OCR Scan     		PDF KM29N16000AR KM29N16000AT/R 264-byte 250ps GG314f

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Samsung KMM364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The KMM372C225A - 6 KMM372C225A - 7


    OCR Scan     		PDF KMM364C124AJ KMM364C124AJ 1Mx64 1Mx16, KMM372C225A 1Mx16bit 44-pin

    GD341

    Abstract: taa 723 KM44C1000D KM44V1000D km44c1000dj-7
    Text: KM44C1000DJ CMOS DRAM ELE C T R O N IC S 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44C1000DJ 003mM? GD341 taa 723 KM44C1000D KM44V1000D km44c1000dj-7

    "Video RAM"

    Abstract: No abstract text available
    Text: KM4216C/V255 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 C M OS DRAM. The RAM port has a write per bit m ask capability. * Dual port Architecture 256K x 16 bits RAM port


    OCR Scan     		PDF 4216C/V255 256KX 110ns 130ns 150ns KM4216C255 KM4216V255 120mA 110mA "Video RAM"

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681002A 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12,15,17,20 ns Max. • Low Power D issipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.) KM681002A-15 : 190 mA (Max.)


    OCR Scan     		PDF KM681002A KM681002A-12 KM681002A-15 KM681002A-17 81002A-20 KM681002AJ 32-SOJ-400 KM681002AT 32-TSOP2-4QOF KM681002A

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C4103A/AL/ALL/ASL 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRA C tCAC tR C K M 44C 4103 A /Ä L /Ä L L /A S L -5 50n s 13ns 9 0 ns K M 44C 4 1 0 3 A / A L /A L L /A S L -6 60n s 15n s


    OCR Scan     		PDF KM44C4103A/AL/ALL/ASL comKM44C4103A/AL/ALL/ASL 28-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KMM372V1600AS ELECTRONICS DRAM Module KMM372V1600AK/AS & KMM372V1680AK/AS Fast Page Mode 16Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V160 8 0 A is a 16M bit x 72 • Part Identification Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM372V1600AS KMM372V1600AK/AS KMM372V1680AK/AS 16Mx72 16Mx4, KMM372V160 KMM372V1600AK 400mil