BI71
Abstract: No abstract text available
Text: HM5283206 Series 131,072-word x 32-bit x 2-bank Synchronous Graphic RAM HITACHI ADE-203-223A Z Rev. 1.0 May. 30, 1996 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5283206 provides 2 banks to realize better performance. 8 column block write function and write per bit function are provided for
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HM5283206
072-word
32-bit
ADE-203-223A
Hz/83
Hz/66
BI71
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KM6865BP-20
Abstract: KM6865BP-15
Text: KM6865B CMOS SRAM 8 K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12 ,15, 20,25ns Max. The KM865B is a 65,536-bit high-speed Static Random • Low Power D issipation Access Memory organized as 8,192 words by 8 bits.
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KM6865B
KM865B
536-bit
KM6865B-12
KM6865B-15
KM6865B-25
KM6865BP-20
KM6865BP-15
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 1 6 4 0 5 16 M BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE Description The /iPD4216405 is a 4,194,304 words by 4 bits dynamic CM OS RAM w ith optional hyper page mode. Hyper page m ode is a kind of the page mode and is useful for the read operation.
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/iPD4216405
26-pin
cycles/64
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A673 transistor
Abstract: transistor a673 b627 transistor B734 transistor a639 transistor B722 TRANSISTOR DATA diode PJ 966 transistor bc29 pj 939 diode B627
Text: Order this document as AN441/D MOTOROLA SEM ICO N D U CTO R APPLICATION NOTE AN441 MC68HC05E0 EPROM Emulator By Peter Topping MCU Applications Group Motorola Ltd, East Kilbride INTRODUCTION The MC68HC05E0 isa versatile member of the M6805 family of microprocessors. Unlike most other versions
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AN441/D
AN441
MC68HC05E0
M6805
A673 transistor
transistor a673
b627 transistor
B734 transistor
a639 transistor
B722 TRANSISTOR DATA
diode PJ 966
transistor bc29
pj 939 diode
B627
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LH21256-12
Abstract: LH21258-15 LH21257-12 LH21256 AE12A lh21257
Text: LH21256/7/8 FEATURES 262,144 x 1 bit organization Access times: 100/120/150 ns MAX. Cycle times: 200/230/260 ns (MIN.) Page mode operation (LH21256) ^ Nibble mode operation (LH21257) ^ Byte mode operation (LH21258) Power supply: +5 V ± 10% NMOS 256K (256K x 1) Dynamic RAM
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LH21256/7/8
LH21256)
LH21257)
LH21258)
16-pin,
300-mil
325-mil
LH21256/7/8
LH21256-12
LH21258-15
LH21257-12
LH21256
AE12A
lh21257
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hi1179
Abstract: H11179
Text: H!1179 Semiconductor 8-Bit, 35 MSPS, Video A/D Converter August 1997 Description Features Resolution 8 -B it. ±0.5 LSB DNL The H 11179 is an 8-bit CMOS analog-to-digital converter for video use that features a sync clamp function. The adoption
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330fi
CXD1179
hi1179
H11179
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800LE
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ / I P D 4 2 S 1 7 8 0 0 , 4 2 1 7 8 0 0 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D escription TheixPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S17800
uPD4217800
jiPD42S17800
28-pin
iiPD42S17800-60,
/iPD42S
IPD42S17800-80,
VP15-207-2
800LE
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777T7
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT / ¿P D 4 2 1 6 4 0 5 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The /iPD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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/iPD4216405
//PD4216405
26-pin
cycles/64
J/PD4216405-50
/xPD42O
0161o
b427525
20too5
777T7
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IR receiver TK 19 527
Abstract: TLD 721 5FW-4 Fm 6721 transformer
Text: DP8344B National ÆLm Semiconductor DP8344B Biphase Communications Processor— BCP G eneral Description although a TTL-level serial input is also provided for applica tions where an external comparator is preferred. The DP8344B BCP is a communications processor de
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DP8344B
DP8344B
IR receiver TK 19 527
TLD 721
5FW-4
Fm 6721 transformer
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Untitled
Abstract: No abstract text available
Text: HM5221605 Series Preliminary 65,536-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs are referred to the rising edge of the clo ck input. The HM5221605 is offered in 2 banks for improved performance. Features Rev. 0.1 Sep. 22,1994
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HM5221605
536-word
16-bit
HM5221605TT-20
HM5221605TT-17
HM5221605TT-15
400-mil
50-pin
TTP-50DA)
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MPC1490
Abstract: mPD6125ACA PD6125A SE303A-C simple ir remote controll circuit XRL Series 200H AIPD6125ACA-XXX IPD6125AG-XXX 24PIN
Text: £ * - J . M O S INTEGRATED C IR C U IT PD6125A M U L T I-P U R P O S E REMOTE CO NTRO L T R A N S M IT T E R CMOS IC LSI T he /JP D 6125A is intended fo r ap plicatio ns in infrared re m o te -co n tro l tra n sm itte rs fo r c o n tro llin g T V , VC R ,
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PD6125A
/jPD6125A
pts/455
24-PIN
MPC1490
mPD6125ACA
PD6125A
SE303A-C
simple ir remote controll circuit
XRL Series
200H
AIPD6125ACA-XXX
IPD6125AG-XXX
24PIN
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A10AL
Abstract: TC538200AFT
Text: TO SH IB A TC538200AP/AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 8 MBIT 512 K WORD BY 16 BITS/1 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits when BYTE is logical high, and as 1,048,576 words by 8 bits when BYTE is logical low.
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TC538200AP/AF/AFT
TC538200AP/AF
608-bit
42-pin
44-pin
OP44--
A10AL
TC538200AFT
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Untitled
Abstract: No abstract text available
Text: IN T E L CORP -CMEMORY/LOGIC} n 4826176 IN TEL CORP M EM O RY/LO G IC i>Ë| LiüHblTfc, O D S ä ^ S 99D 58935 D 29C13 AND 29C14 CHMOS COMBINED SINGLE-CHIP PCM CODEC AND FILTER AT&T D3/D4 and CCITT Compatible 29C14 Asynchronous Clocks, 8th Bit Signaling, Loop Back Test Capability
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29C13
29C14
28-Pin
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HM65256BLP-10
Abstract: dp - 20t DG250 HM65256BFP-12T HM65256B HM65256BFP-10T HM65256BFP-15T HM65256BFP-20T HM65256BLFP-10T HM65256BLFP-12T
Text: HM65256B Series 5.0 V S u p p ly 32,768-w ord x 8-bit H ig h S p e e d P s u e d o S ta tic R A M Features • Single 5 V ±10% • Access time — CE access time: 100/120/150/200 ns — Address access time: 50/60/75/100 ns (in static column mode) • Cycle time
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HM65256B
768-word
HM65256BLSP-10
HM65256BLSP-12
HM65256BLSP-15
HM65256BLSP-20
44rb203
A8-A14
44tbp03
HM65256BLP-10
dp - 20t
DG250
HM65256BFP-12T
HM65256BFP-10T
HM65256BFP-15T
HM65256BFP-20T
HM65256BLFP-10T
HM65256BLFP-12T
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KIA6072AF b i p o l a r l i n e a r i n t e g r a t e d c ir c u it FM PROCESSOR KIA6072AF is an LSI designed for car-tuner. built in FM IF detector, noise canceller and stereo decoder on single chip, the space merit is improved,
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KIA6072AF
KIA6072AF
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D42S17805
Abstract: 42S17805 7805G PD4217805 S17805
Text: DATA SHEET NEC / M O S INTEGRATED CIRCUIT / /¿PD42S17805, 4217805 16 M -B IT D YN AM IC RA M 2 M -W O R D BY 8-BIT, H YPER PAGE M O DE Description The jiPD42S17805,4217805 are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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uPD42S17805
uPD4217805
jiPD42S17805
/iPD42S17805
/iPD42S17805,
28-pin
440ig
xPD42S17805,
PD42S17805,
D42S17805
42S17805
7805G
PD4217805
S17805
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TC59G1631
Abstract: No abstract text available
Text: TO SHIBA TC59G1631AFB-80.-10.-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 262,144-WORD x 2-BANK x 32-BIT SYNCHRONOUS GRAPHICS RAM DESCRIPTION The TC59G1631AFB is a CMOS synchronous graphics random access memory organized as 262, 144
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TC59G1631AFB-80
144-WORD
32-BIT
TC59G1631AFB
TC59G1631
AFB-80
TQFP100-P-1420-0
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ltls
Abstract: MARK M2W SI03 256kx4 vram IRFH fscj V52C4258
Text: JON i 2 '982 V V'TELIC V52C4258 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512 X 4 SAM HIGH PERFORMANCE V52C4258 80 10 Max. RAS Access Time, tnAC 80 ns 100 ns Max. CAS Access Time, (tcAc) 25 ns 25 ns Max. Column Address Access Time, (t*) 45 ns 50 ns Min. Fast Page Mode Cycle Time, (tPC)
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V52C4258
V52C4258
144-words
512-words
ltls
MARK M2W
SI03
256kx4 vram
IRFH
fscj
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-422000AA64 2 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-422000AA64 is a 2,097,152 words by 64 bits dynamic RAM module on which 8 pieces of 16 M DRAM: JUPD4218160 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
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MC-422000AA64
64-BIT
MC-422000AA64
JUPD4218160
MC-422000AA64-60
MC-422000A
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k357
Abstract: a21s0
Text: Am2130/Am 2140 1 0 2 4 x 8 Dual-Port Static Random-Access Memories > 3 DISTINCTIVE CHARACTERISTICS True dual port operation Access time as fast as 55 ns Master device Am2130 has on-chip arbitration Expandable data bus width in multiples of 6 bits using one master (Am2130) and required number of slave
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Am2130
Am2130)
Am2140)
48-pin
52-pin
Am2140
k357
a21s0
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Untitled
Abstract: No abstract text available
Text: NN511000 series Fast Page Mode CMOS 1Mx 1bit Dynamic RAM NPN a DESCRIPTION The NN511000 series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 1 bit. The NN511000 series is fabricated with advanced CMOS technology and designed with innovative design tech
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NN511000
G001375
000137b
NH511000
NN511000XX-X
128ms
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tea 6200
Abstract: 4000B 74AC 74HC 74HCT ADC4204
Text: I Ofy *ip The World Resource for Precision Signal Technology ADC4204 Low Power, 16-Bit, 86 kHz Sampling A /D Converter Perform ance Features Features The ADC4204 is a 16-bit, low-power CMOS monolithic sampling A/D converter implemented with the successive approximation technique and with self-calibration to ensure true 16-bit ac
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ADC4204
ADC4204
16-bit,
16-bit
00571A
tea 6200
4000B
74AC
74HC
74HCT
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NEC uPD 833
Abstract: NEC 4216160
Text: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ ^uPD42S16160,4216160,42S18160,4218160 1 6 M - B IT D Y N A M IC R A M 1 M -W O R D B Y 1 6 -B IT , F A S T P A G E M O D E , B Y T E R E A D / W R IT E M O D E Description T h e ^ P D 4 2 S 1 6 1 6 0 , 4 2 1 6 1 6 0 , 4 2 S 1 8 1 6 0 , 4 2 1 8 1 6 0 a re 1 ,0 4 8 , 5 7 6 w o rd s b y 16 b its C M O S d yn a m ic R A M s. T h e
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
50-pin
42-pin
VP15-207-2
NEC uPD 833
NEC 4216160
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Cd 2111c
Abstract: PCF2112 2111C S26TT 2s531 PCF2111CT
Text: Philips Semiconductors Product specification LCD drivers PCF21XXC family FEATURES G ENERAL DESCRIPTION • Supply voltage 2.25 to 6.0 V The m em bers of the PCF21XXC family are single-chip, silicon gate CMOS circuits. A 3-line bus CBUS structure enables serial data transfer with m icrocontrollers. All
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PCF2100C)
2111C)
PCF2112C)
PCF21XXC
PCF21XX
Cd 2111c
PCF2112
2111C
S26TT
2s531
PCF2111CT
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