Untitled
Abstract: No abstract text available
Text: K7R643682M K7R641882M K7R640982M 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM 72Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K7R643682M
K7R641882M
K7R640982M
2Mx36
4Mx18
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K7R643682MF
Abstract: IR 10D 6g
Text: K7R643682M K7R641882M K7R640982M 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM 72Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K7R643682M
K7R641882M
K7R640982M
2Mx36
4Mx18
K7R643682MF
IR 10D 6g
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K7R640982M
Abstract: No abstract text available
Text: K7R643682M K7R641882M K7R640982M 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM 72Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K7R643682M
K7R641882M
K7R640982M
2Mx36
4Mx18
K7R640982M
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K7R643682
Abstract: No abstract text available
Text: K7R643682M K7R641882M K7R640982M 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM 72Mb M-die QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K7R643682M
K7R641882M
K7R640982M
2Mx36
4Mx18
K7R643682
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SRAM sheet samsung
Abstract: No abstract text available
Text: K7J643682M K7J641882M 2Mx36 & 4Mx18 DDR II SIO b2 SRAM 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7J643682M
K7J641882M
2Mx36
4Mx18
11x15
SRAM sheet samsung
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Untitled
Abstract: No abstract text available
Text: K7J643682M K7J641882M 2Mx36 & 4Mx18 DDR II SIO b2 SRAM 72Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7J643682M
K7J641882M
2Mx36
4Mx18
11x15
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Untitled
Abstract: No abstract text available
Text: K7J643682M K7J641882M 2Mx36 & 4Mx18 DDR II SIO b2 SRAM 72Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7J643682M
K7J641882M
2Mx36
4Mx18
11x15
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Untitled
Abstract: No abstract text available
Text: K7I643684M K7I641884M 2Mx36 & 4Mx18 DDRII CIO b4 SRAM 72Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7I643684M
K7I641884M
2Mx36
4Mx18
11x15
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Untitled
Abstract: No abstract text available
Text: K7I643684M K7I641884M 2Mx36 & 4Mx18 DDRII CIO b4 SRAM 72Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7I643684M
K7I641884M
2Mx36
4Mx18
11x15
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Untitled
Abstract: No abstract text available
Text: K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM 72Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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Original
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K7I643682M
K7I641882M
2Mx36
4Mx18
11x15
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Untitled
Abstract: No abstract text available
Text: K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM 72Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7I643682M
K7I641882M
2Mx36
4Mx18
11x15
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Untitled
Abstract: No abstract text available
Text: User Guide for DDRII CIO 2Burst B-die Advance 1Mx36 & 2Mx18 DDRI b2 SRAM As DDRI Mode Document Title 1Mx36-bit, 2Mx18-bit DDRII CIO 2Burst M-die SRAM Technical Note Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial document. May. 3, 2004 Advance
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1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
11x15
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SRAM sheet samsung
Abstract: No abstract text available
Text: K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7I643682M
K7I641882M
2Mx36
4Mx18
11x15
SRAM sheet samsung
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Untitled
Abstract: No abstract text available
Text: User Guide for DDRII CIO 4Burst B-die Advance 1Mx36 & 2Mx18 DDRI b4 SRAM As DDRI Mode Document Title 1Mx36-bit, 2Mx18-bit DDRII CIO 4Burst M-die SRAM Technical Note Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial document. May. 3, 2004 Advance
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1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
11x15
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IS61DDPB24M18
Abstract: 61DDPB22M36 IS61DDPB22M36
Text: 72 Mb 2M x 36 & 4M x 18 DDR-IIP (Burst of 2) CIO Synchronous SRAMs . (2.5 Cycle Read Latency) August 2010 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late
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IS61DDPB22M36-400M3
IS61DDPB22M36-400M3L
IS61DDPB24M18-400M3
IS61DDPB24M18-400M3L
IS61DDPB22M36-375M3
IS61DDPB22M36-375M3L
IS61DDPB24M18-375M3
IS61DDPB24M18-375M3L
2Mx36
IS61DDPB24M18
61DDPB22M36
IS61DDPB22M36
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Untitled
Abstract: No abstract text available
Text: 72 Mb 2M x 36 & 4M x 18 DDR-IIP (Burst of 2) CIO Synchronous SRAMs . (2.5 Cycle Read Latency) Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late
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165-ball
delay-lock1/08
IS61DDPB22M36-400M3
IS61DDPB22M36-400M3L
IS61DDPB24M18-400M3
IS61DDPB24M18-400M3L
IS61DDPB22M36-375M3
IS61DDPB22M36-375M3L
IS61DDPB24M18-375M3
IS61DDPB24M18-375M3L
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IS61DDPB24M18
Abstract: IS61DDPB22M36
Text: 72 Mb 2M x 36 & 4M x 18 DDR-IIP (Burst of 2) CIO Synchronous SRAMs . (2.5 Cycle Read Latency) Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late
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IS61DDPB22M36-400M3
IS61DDPB22M36-400M3L
IS61DDPB24M18-400M3
IS61DDPB24M18-400M3L
IS61DDPB22M36-375M3
IS61DDPB22M36-375M3L
IS61DDPB24M18-375M3
IS61DDPB24M18-375M3L
2Mx36
IS61DDPB24M18
IS61DDPB22M36
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Untitled
Abstract: No abstract text available
Text: K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM 72Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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Original
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K7R643684M
K7R641884M
2Mx36
4Mx18
11x15
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Untitled
Abstract: No abstract text available
Text: K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM 72Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7R643684M
K7R641884M
2Mx36
4Mx18
11x15
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Untitled
Abstract: No abstract text available
Text: Preliminary K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM Document Title 2Mx36-bit, 4Mx18-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Sep 14, 2002 Advance 0.1 1. Update AC timing characteristics. 2. Change the JTAG instruction coding.
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K7R643684M
K7R641884M
2Mx36
4Mx18
2Mx36-bit,
4Mx18-bit
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K7R643684
Abstract: No abstract text available
Text: K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM 72Mb M-die QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7R643684M
K7R641884M
2Mx36
4Mx18
11x15
K7R643684
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 1M Late Write LVTTL MCM69L537 MCM69L619 The MCM69L537/619 is a 1 megabit synchronous late write fast static RAM designed to provide high performance in secondary cache, ATM switch, Telecom, and other high speed memory applications. The MCM69L619
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MCM69L537/619
MCM69L619
MCM69L537
69L537
69L619
MCM69L537ZP7
MCM69L619ZP7
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 4M Late Write LVTTL MCM69R737A MCM69R819A The MCM69R737A/819 A is a 4 megabit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications. The MCM69R819A
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MCM69R737A/819
MCM69R819A
MCM69R737A
69R737A
69R819A
MCM69R737AZP5
MCM69R819AZP5
MCM69R737AZP5R
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 4M Late Write LVTTL MCM69R737 MCM69R819 The MCM69R737/819 is a 4 megabit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed m em ory ap plication s. The M C M 69R 819
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MCM69R737/819
MCM69R737
MCM69R819
69R737
69R819
-MCM69R737ZP7
MCM69R819ZP7
MCM69R737ZP7R
MCM69R819ZP7R
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