DIODE 349
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
|
Original
|
7N60Z
7N60Z
O-220lues
QW-R502-349
DIODE 349
|
PDF
|
DIODE 349
Abstract: 7n60z
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
|
Original
|
7N60Z
7N60Z
QW-R502-349
DIODE 349
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
|
Original
|
7N60Z
7N60Z
O-220
O-220F1
O-263
QW-R502-349
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
|
Original
|
7N60Z
7N60Z
QW-R502-349
|
PDF
|
DIODE 349
Abstract: 600v 2A ultra fast recovery diode
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
|
Original
|
7N60Z
7N60Z
QW-R502-349
DIODE 349
600v 2A ultra fast recovery diode
|
PDF
|