Marking 7n6 Mosfet
Abstract: marking 7n6 7n6 diode zxmn6a07f
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ@ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for
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ZXMN6A07F
AEC-Q101
DS33547
Marking 7n6 Mosfet
marking 7n6
7n6 diode
zxmn6a07f
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Marking 7n6 Mosfet
Abstract: 7n6 diode marking 7n6 ZXMN6A07F ZXMN6A07FQTA tr/transistor 7n6
Text: A Product Line of Diodes Incorporated ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ @ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits
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ZXMN6A07F
AEC-Q101
DS33547
Marking 7n6 Mosfet
7n6 diode
marking 7n6
ZXMN6A07F
ZXMN6A07FQTA
tr/transistor 7n6
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ZXMN6A07F
Abstract: ZXMN6A07FTA ZXMN6A07FTC 18a diode sot23 18a sot23 Marking 7n6 Mosfet
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=60V; RDS(ON)=0.4 D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power
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ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
uni00
ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
18a diode sot23
18a sot23
Marking 7n6 Mosfet
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Untitled
Abstract: No abstract text available
Text: ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.250 @ VGS= 10V 1.4 0.350 @ VGS= 4.5V 1.2 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast
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ZXMN6A07F
D-81541
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marking 7n6
Abstract: 7n6 SOT23 TS16949 ZXMN6A07F ZXMN6A07FTA regulator 59
Text: ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary RDS on (⍀) ID (A) 0.250 @ VGS= 10V 1.4 0.350 @ VGS= 4.5V 1.2 V(BR)DSS 60 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast
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ZXMN6A07F
ZXMN6A07FTA
D-81541
marking 7n6
7n6 SOT23
TS16949
ZXMN6A07F
ZXMN6A07FTA
regulator 59
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ZXMN6A07F
Abstract: ZXMN6A07FTA ZXMN6A07FTC Marking 7n6 Mosfet
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4 ID=1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
Marking 7n6 Mosfet
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Untitled
Abstract: No abstract text available
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4⍀ D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power
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ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
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Marking 7n6 Mosfet
Abstract: marking 7n6 18a diode sot23 7n6 diode ZXMN6A07F
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 60V; RDS(ON) = 0.300 ID = 1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
7N6-04
Marking 7n6 Mosfet
marking 7n6
18a diode sot23
7n6 diode
ZXMN6A07F
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ZXMN6A07F
Abstract: Marking 7n6 Mosfet
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 60V; RDS(ON) = 0.300 ID = 1.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
ZXMN6A07F
Marking 7n6 Mosfet
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