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    7MBP50RJ120 Price and Stock

    Fuji Electric Semiconductors 7MBP50RJ-120

    IGBT IPM MOD.DIODE SEVEN 50A 1200V R SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik 7MBP50RJ-120
    • 1 $145.1775
    • 10 $138.2643
    • 100 $138.2643
    • 1000 $138.2643
    • 10000 $138.2643
    		Get Quote

    7MBP50RJ120 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    7MBP50RJ120 Fuji Electric IGBT IPM Original PDF

    7MBP50RJ120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7MBP50RJ120

    Abstract: igbt driver A 4504 HCPL 357 a 4504 1200V-class
    Text: 7MBP50RJ120 1200V / 50A 7 in one-package IGBT IPM R-series 1200V class Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs. · Low power loss and soft switching. · High performance and high reliability IGBT with overheating protection.


    Original     		PDF 7MBP50RJ120 7MBP50RJ120 igbt driver A 4504 HCPL 357 a 4504 1200V-class

    6mbp20rta060

    Abstract: TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120
    Text: Quality is our message FUJI IGBT–IPM APPLICATION MANUAL Sep. 2004 REH983a CONTENTS Chapter 1 Features 1. GBT-IPMs Characteristics .1-2 2. IPM Characteristics by Series .1-4


    Original     		PDF REH983a 6mbp20rta060 TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120

    7MBP50RJ120

    Abstract: AC200V AC2500 P610 P611 fuji 3 kV IGBT all type of fuji igbt transistor module p621 b
    Text: １．Package Outline Drawings 1 3 . 8 ±0.3 109 ±1 95 ±0.3 66.44 1 0 ±0.2 3 . 2 2 ±0.3 ±0.15 10 6 ±0.15 ±0.2 1 0 ±0.2 1 2 ±0.25 6 ±0.15 2 ±0.1 4-φ5.5 2 ±0.3 6 10 74 P 20 88 ±1 ±0.3 20 B N V U 0.5 17 W 0.5 24 26 26 19-□0.5 2-φ2.5 50A 2 ±0.1


    Original     		PDF 7MBP50RJ120 MS6M0696 H04-004-03 7MBP50RJ120 AC200V AC2500 P610 P611 fuji 3 kV IGBT all type of fuji igbt transistor module p621 b

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！


    Original     		PDF max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120