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    7MBP25TEA120 Search Results

    7MBP25TEA120 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    7MBP25TEA120 Fuji Electric TRANS IGBT MODULE N-CH 1200V 25A Original PDF

    7MBP25TEA120 Datasheets Context Search

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    7MBP25TEA120

    Abstract: AC200V AC2500
    Text: 7MBP25TEA120 1200V / 25A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection


    Original     		PDF 7MBP25TEA120 7MBP25TEA120 AC200V AC2500

    6mbp20rta060

    Abstract: TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120
    Text: Quality is our message FUJI IGBT–IPM APPLICATION MANUAL Sep. 2004 REH983a CONTENTS Chapter 1 Features 1. GBT-IPMs Characteristics .1-2 2. IPM Characteristics by Series .1-4


    Original     		PDF REH983a 6mbp20rta060 TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120

    MT6M04057

    Abstract: 7MBP25TEA120 AC2500 BP25 DC600V HCPL4504 TLP521 pc-125 fire alarm using zener fuji igbt n-series
    Text: Lot No. Package type : P622 MS6M 00765 25A 1200V JAPAN 7M BP25 TEA1 20 O Dimensions in mm Odered No. in monthly Manufactured month Jan.～Sep.:1～9,Oct.:O,Nov.:N,Dec.:D Last digit of manufactured year Indication of Lot No. 1.□は理論寸法を示す。


    Original     		PDF H04-004-03a MT6M04057 7MBP25TEA120 AC2500 BP25 DC600V HCPL4504 TLP521 pc-125 fire alarm using zener fuji igbt n-series

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！


    Original     		PDF max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120

    Untitled

    Abstract: No abstract text available
    Text: Lot No. Package type : P622 MS6M 00765 25A 1200V JAPAN 7MB P25 TEA1 20 O Package type : P622 Dimensions in mm Odered No. in monthly Manufactured month Jan.～Sep.:1～9,Oct.:O,Nov.:N,Dec.:D Last digit of manufactured year Indication of Lot No. 1.□は理論寸法を示す。


    Original     		PDF H04-004-03a