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    Untitled

    Abstract: No abstract text available
    Text: K M 4 8 C 2 10 4 B K CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF 16Mx4, 512Kx8) KM48C2104BK) KM48C2104BK 7ib414E

    UF 407 Diode

    Abstract: power supply IRF830 APPLICATION 12G471 KA7524 M21 diode circuit diagram ballast 12v 450V 47UF zener c15 5t KA7524D Zener diode 1N4148
    Text: LINEAR INTEGRATED CIRCUIT KA7524 POWER FACTOR CONTROLLER The KA7524 provides the necessary features to implement the Electronic BALLAST control and S.M.P.S application for desig­ ning on active power factor correction circuit. FEATURES • • • • •


    OCR Scan     		PDF KA7524 KA7524 500mA KA7524/KA7524DDIP, 25--f-100Â KA7524D 7U414E IRF830 UF 407 Diode power supply IRF830 APPLICATION 12G471 M21 diode circuit diagram ballast 12v 450V 47UF zener c15 5t Zener diode 1N4148

    Untitled

    Abstract: No abstract text available
    Text: KMM332V400BS-L KMM332V41OBS-L DRAM MODULE KMM332V400BS-L & KMM332V41 OBS-L Fast Page Mode 4Mx32 DRAM DIMM, Low Power with Self Ref, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332V40 1 0BS is a 4M bit x 32 D ynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM332V400BS-L KMM332V41OBS-L KMM332V41 4Mx32 KMM332V40 24-pin 72-pin KMM332V400BS-L6/L7 cycles/128ms