Untitled
Abstract: No abstract text available
Text: bDE D • T c]7G57fl 0d07flQcl ZETEX N-channel enhancement mode vertical DMOS FET SEMICONDUCTORS ZV N 05 45 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance •
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7G57fl
0d07flQc
ZVN054nt
F-108
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Untitled
Abstract: No abstract text available
Text: SbE D • Tc 7G57fl üüüb^SB *i&3 ■ZETB CENTRE COLLECTOR E-LINE ZETEX SEMICONDUCTORS TABLE 1: MEDIUM POWER Type Max. V CE|sat| at 'c •b mA mA V Max. VcBO ^CEO Cont. 'c V mA V - p 3 3 - c> i Ufe at Min. fT at lc Min. Max. mA MHz mA P,o, "l"amb = 25°C
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7G57fl
FXT455
FXT453
FXT56
FXT451
FXT55
FXT450
FXT54
FXT449
FXT68
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Untitled
Abstract: No abstract text available
Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1053 ISSUE 1 • NOVEMBER 1995 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage C ollector-E m itter Voltage VALUE UNIT V CBO 150 V V CEO 75 V Emitter-Base Voltage V ebo 5 V Peak Pulse Current
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ZDT1053
100MHz
7G57fl
100mA
n7Q57fl
000R532
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Untitled
Abstract: No abstract text available
Text: 5bE D • ^70570 GOGbTH? bflT ■ Z E T B E-LINE DIODE SPECIFICATIONS S C H O T T K Y BARRIER DIODES ZETEX T - c n - i^ SEMICONDUCTORS T h e se de v ice s have a high breakdow n voltage and ultra fa st sw itc h in g capabilities. R.F. applications in clu d e low n o ise m ixers, large and sm all signal detectors, lim iters and discrim inators. A p p lica tio n s
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ZC2800
ZC2811
ZC5800
7G57fl
DO-35)
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ISD 2210
Abstract: No abstract text available
Text: ZETEX SEMICONDUCTORS TSD D Bi T'ïVOSTÔ D O O S b ? ? 2 MZETB 95D 0 5 6 7 7 T '3 ? '0 ? ZV N 2210 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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ZVN2210B*
ZVN2210L
stability39
O-220
ISD 2210
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