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    Abstract: No abstract text available
    Text: TS PLESSEY SENI C O N D / D I SC R E T E 7220533 PLESSEY F Ë Ï 7E50533 000SD7M 7 95D 0 5 0 7 4 SEMICOND/ D IS CRE TE Super E-line transistors TABLE 4 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps


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    PDF 7E50533 000SD7M ZTX657 MPSA42 BF393 BF392 ZTX656 MPSA43 BF391 ZTX655

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SENICOND/DISCRETE 03 DE • 7E50533 OODbbCH 3 | ~ ZC2800Er ZC2810E ZC2811E ZC5800E Schottky barrier diodes The Z C 2 8 1 0 E is not recommended for NEW DESIGNS. CH ARACTERISTICS at 2 5 ° C ambient temperature . Parameter Breakdown Voltage Reverse leakage current


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    PDF 7E50533 ZC2800Er ZC2810E ZC2811E ZC5800E ZC2800E

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SENICOND/DISCRETE T5 D E ^ 7E50533 □ □□4eJ2fl 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E 9SD 04928 D T - Z - ? - * 2-7 CORE DRIVERS TABLE 9 - N P N SILICO N PLANAR HIGH SPEED CORE DRIVER T R A N SIST O R S The devices shown in this table are designed for use in fast, medium and high voltage, high current core


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    PDF 7E50533 BSX59 BSX60 BSX61 2N3261 2N3512 2N3724 2N3725 BD320A BD320B

    PLESSEY SP

    Abstract: No abstract text available
    Text: PLESSEY SEMICOND/DISCRETE 7220533 ^5 PLESSEY d F | ? E S 0S33 95D 0 55 83 SEMICOND/DISCRETE N-channel enhancem ent mode vertical D M O S FET GGGSSfla b VN 10L FEATURES • C o m p a c t ge om etry • F a s t sw itc h in g sp e e d s • N o se c o n d a ry b re a k d o w n


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    PDF 755D533 5aG533 PLESSEY SP