81c78
Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Text: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M
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2147-35C
2147-45C
2147-45M+
2147-55C
2147-55M
2148-35C
2148-35M
2148-45C
81c78
7C291
5962-8515505RX
27PC256-12
PAL164A
8464C
5C6408
72018
39C10B
MACH110 cross reference
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7C109A
Abstract: CY7C106A CY7C109 JESD22
Text: Qualification Report December 1996 QTP# 96053/96081, Version 1.2 1 Meg SRAM - R28 Technology CY7C106A 256K x 4 Static RAM CY7C109 128K x 8 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part
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CY7C106A
CY7C109
32-pin,
400-mil
7C109A
85C/85
CY7C109-VCB
CY7C109-VC
7C109A
CY7C106A
CY7C109
JESD22
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7C109A
Abstract: CY7C109
Text: Cypress Semiconductor Qualification Report QTP# 98064 VERSION 1.0 April, 1998 1 Meg SRAM, R42HD Technology, Fab 4 Qualification CY7C109/CY7C1009 128K x 8 SRAM 5V Operation Cypress Semiconductor, Inc. 128K x 8 SRAM - R42DH Technology - Fab 4 Device: CY7C109 (7C109H)
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R42HD
CY7C109/CY7C1009
R42DH
CY7C109
7C109H)
32-pin,
400-mil
CY7C109-VC
7C109A
CY7C109
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MSM 6290
Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
MSM 6290
msm 5562
27c256 intel
62c512
AP 2068
27C512 microchip
62256
57C256
27C512 SGS-THOMSON
27C512-150
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SOJ package MSL
Abstract: 7C109A CY7C109 JESD22 R42HD R42HD FAB4
Text: Cypress Semiconductor Qualification Report QTP# 98085 VERSION 1.0 June, 1998 1 Meg SRAM, R42HD Technology, Hot Aluminum CY7C109/CY7C1009 128K x 8 SRAM 5V Operation Cypress Semiconductor, Inc. 1 Meg SRAM - R42HD Technology, Hot Al - Fab 4 Device: CY7C109 (7C109H)
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R42HD
CY7C109/CY7C1009
CY7C109
7C109H)
R42HD
32-pin,
400-mil
SOJ package MSL
7C109A
CY7C109
JESD22
R42HD FAB4
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cy3341
Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Text: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194
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7C147
7C123
7C148
7C149
7C150
7C189
7C190
7C122
7C167A
7C168A
cy3341
64K X 4 CACHE SRAM
CY7C190
pasic380
cy7c189
palce22v10 programming guide
palce16v8 programming algorithm
STATIC RAM 6264
vhdl code for 8-bit parity checker
64x18 synchronous sram
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27HC642
Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
27HC642
39C10B
PAL22V10APC
CY2254SC-1
7132SA70
93L422AM
7024S15
7130SA25
7C198-45C
7006S
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7C109A
Abstract: CY7C106A CY7C109 JESD22
Text: Qualification Report December 1996, QTP# 96313, Version 1.1 1 Meg SRAM - R28 Technology CY7C106A 256K x 4 Static RAM CY7C109 128K x 8 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part
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CY7C106A
CY7C109
32-pin,
400-mil
7C109A
CY7C109-VC
85C/85
7C109A
CY7C106A
CY7C109
JESD22
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7C109A
Abstract: 8361H CY7C1009 JESD22 CY7C109-VC
Text: Qualification Report December 1996, QTP# 96322, Version 1.1 CY7C1009 128K x 8 Static RAM - 32-Pins, 300-mil SOJ PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part
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CY7C1009
32-Pins,
300-mil
32-pin,
7C109A
85C/85
CY7C109-VC
7C109A
8361H
CY7C1009
JESD22
CY7C109-VC
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7C109A
Abstract: CY7C109 JESD22
Text: Qualification Report September 1996, QTP# 96224, Version 1.0 OMEDATA ASSEMBLY 28/32L, 400-MIL SOJ PACKAGE PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part
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28/32L,
400-MIL
CY7C109
32-pin,
7C109A
85C/85
CY7C109-VC
7C109A
CY7C109
JESD22
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Hitachi-CEL9200
Abstract: CY7C109 JESD22
Text: Cypress Semiconductor Qualification Report QTP# 97201 VERSION 2.0 February, 1998 1 Meg SRAM, R32D Technology, Fab 4 Qualification CY7C109/CY7C1009 128K x 8 SRAM 5V Operation CY7C109V33/CY7C1009V33 128K x 8 SRAM (3.3V Operation) Cypress Semiconductor, Inc.
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CY7C109/CY7C1009
CY7C109V33/CY7C1009V33
CY7C109
7C109G/7C1309G)
CY7C109/CY7C1009/CY7C109V33/CY7C1009V33
32-pin,
400-mil
30C/60
Hitachi-CEL9200
CY7C109
JESD22
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CY7C106A
Abstract: 84-1MISR4 CY7C109 R28 transistors
Text: Cypress Semiconductor Qualification Report QTP# 97253, VERSION 1.0 August, 1997 1 Meg SRAM, R28 Technology, Fab 4 Qualification CY7C106A 256K x 4 Static RAM CY7C109 128K x 8 Static RAM Cypress Semiconductor 1 Meg SRAM, R28 Technology, Fab 4 Devices:CY7C106A/CY7C109
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CY7C106A
CY7C109
CY7C106A/CY7C109
32-pin,
CY7C109-VC
85C/85
CY7C106A
84-1MISR4
CY7C109
R28 transistors
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7C109A
Abstract: 8361H CY62128 JESD22 96081
Text: Qualification Report January 1997, QTP# 96371, Version 1.0 CY62128 128K x 8 Static RAM - 32-Pins, 450-mil SOIC PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part
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CY62128
32-Pins,
450-mil
32-pin,
7C109A
CY7C109-VC
7C109A
8361H
CY62128
JESD22
96081
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sumitomo epoxy
Abstract: 7C109A CY7C109 EME TI
Text: Qualification Report January 1997 QTP# 95483, Version 1.0 SUMITOMO EME-9300 Low Alpha Molding Compound PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part
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EME-9300
CY7C109
32-pin,
400-mil
CY7C109)
7C109A
PassivaY7C109-VC
CY7C109-VC
sumitomo epoxy
7C109A
CY7C109
EME TI
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CY7C109
Abstract: CY7C109A
Text: PRELIMINARY 7C109A 128K x 8 Static RAM Features D D D D D D The 7C109A is a highĆperformance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2),
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CY7C109A
CY7C109A
CY7C109
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140C
Abstract: 7C109A CY7C109
Text: Qualification Report December 1996, QTP# 95457, Version 1.1 Tungsten Silicide Process 1 Meg SRAM, R28 Technology PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part
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CY7C109
32-pin,
400-mil
7C109A
Mat501923
CY7C194-VC
140C
7C109A
CY7C109
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CY7C109
Abstract: CY7C109A 7C109A-15 CY7C109A-20VC 7C109A-35 A15-A7 CY7C109A-15LMB 7C109A-20
Text: PRELIMINARY 7C109A 128K x 8 Static RAM Features D D D D D D The 7C109A is a highĆperformance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2),
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CY7C109A
CY7C109A
CY7C109
7C109A-15
CY7C109A-20VC
7C109A-35
A15-A7
CY7C109A-15LMB
7C109A-20
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CYPRESS SEMICONDUCTOR 128Kx 8 Static RAM Features Functional Description • High speed T h e C Y 7C109A is a high-perform ance C M O S static R A M organized as 131,072 w ords by 8 bits. Easy m em ory expansion is provided by an active L O W chip enable
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128Kx
7C109A
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Untitled
Abstract: No abstract text available
Text: 7c109A: Thursday, November 19,1992 Revision: Thursday, February 18,1993 7C109A PRELIMINARY CYPRESS SEMICONDUCTOR 128K x 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW
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7c109A:
CY7C109A
CY7C109A
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AB26S
Abstract: 7C109A CY7C109 CY7C109A
Text: 7C109A PRELIMINARY l ^wSSQBBSf S S ySSt Ì p YJe JkP XRI- XjiïJF ^ 128KX 8 Static RAM Features Functional Description • H ighspeed The 7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable
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CY7C109A
128Kx
CY7C109A
AB26S
7C109A
CY7C109
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CYPRESS 128Kx 8 Static RAM Features Functional D escription • High speed — t/\A = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 jiW • Automatic power-down when
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CY7C109A
128Kx
CY7C109A
0233-A
25aibb2
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7C109A-20
Abstract: 7C109A
Text: 7C109A PRELIMINARY S F # SEMICONDUCTOR 128K x 8 Static RAM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power The 7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is
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CY7C109A
CY7C109A
32-Lead
400-Mil)
32-Pin
7C109A-20
7C109A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CYPRESS 128Kx 8 Static RAM F e a tu re s F u n c tio n a l D escrip tio n • High speed — tAA = 12 ns The CY7CHWA is a high-performance CM O S static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable
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CY7C109A
128Kx
32-Lead
400-Mil)
32-Pin
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7C109A
Abstract: No abstract text available
Text: PRELIMINARY 7C109A 128K x 8 Static RAM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 ^iW • Automatic power-down when
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CY7C109A
CY7C109A
7C109A
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