B02B
Abstract: 0WS52
Text: 9?2,-.5 AC1;8<80BC@4 7867 >=E4@ @4:0F 5JGUVSJT T +;L EGD:J9Ib HB7AA 7C: <DG B?9GDL7K; DK;C x?A; +Ddpwgijkgm T hfs HL?I9>?C= 97E78?A?IN T .u ^ -ut I;GB?C7A x?A; +Ddp/kffhnjln T k}3 HJG=; 8;IL;C 9D?A 7C: 9DCI79IH x?A; +Ddpu.ufiffgffijno 2=<B02B 30B0 2=8: gs
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97E78
9DCI79IH
uDCI79I
uDCI79I
7AADL78A;
8AB82A
0-01c+
8AB82A
-w/s12/w
B02B
0WS52
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Untitled
Abstract: No abstract text available
Text: CLOCK CRYSTAL OSCILLATORS 5x3.2mm SMD SEAM SEALED CXO TYPE / 7C SERIES Features . Ultra small SMD type clock crystal oscillator units. . High precision characteristic covering up to wide frequency range. . Designed for automatic mounting and reflow soldering.
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15pF/50pF
15pF/30pF
12K-20M)
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ITR20002
Abstract: PT4204-6B 200003 diagram Phototransistor Module, 840nm Wavelength ir420 ITR200
Text: EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: ITR20002 Device Number: CDRX-200-003 REV: 1 Ecn: Page:1/9 PACKAGE DIMENSIONS : Internal connection diagram NOTE: 1 Unit : mm (2)Unspecified tolerance:± 0.3mm DESIGNER CHECKER APPROVED Office:7C Building, LIAN HUA SHAN PORT
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ITR20002
CDRX-200-003
1000hrs
940nm
860nm
150Pcs/1Bag
ITR20002
PT4204-6B
200003 diagram
Phototransistor Module, 840nm Wavelength
ir420
ITR200
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Untitled
Abstract: No abstract text available
Text: OS C ILLATOR S 5X3.2mm SMD SEAM SEALED CXO TYPE / 7C SERIES Features Features Ultra small SMD type clock crystal oscillator units. High precision characteristic covering up to wide frequency range. Designed for automatic mounting and reflow soldering. Optional stand-by function for output: Tri-state output.
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200MHz
70MHz
12K-20M)
260oC
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74ABT16244
Abstract: Hitachi DSA0088 Nippon capacitors
Text: HB56U172E-6C/7C/8C Preliminary 1,048,576-Word x 72-Bit High Density Dynamic RAM Module Rev. 00 May. 12, 1995 The HB56U172E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56U172E-6C/7C/8C
576-Word
72-Bit
HB56U172E
HM514405CTT)
16-bit
74ABT16244
Hitachi DSA0088
Nippon capacitors
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TIBPAL16R6-7C
Abstract: L16R TIBPAL16R4-7C TIBPAL16R8-7C
Text: TIBPAL16L8-7C, TIBPAL16R4-7C, TIBPAL16R6-7C, TIBPAL16R8-7C TIBPAL16L8-10M, TIBPAL16R4-10M, TIBPAL16R6-10M, TIBPAL16R8-10M HIGH-PERFORMANCE IMPACT-X PAL CIRCUITS I SRPS006D - D 3115, MAY 1 9 8 8 -R E V IS E D M ARCH 1992 • • Functionally Equivalent, but Faster than,
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TIBPAL16L8-7C,
TIBPAL16R4-7C,
TIBPAL16R6-7C,
TIBPAL16R8-7C
TIBPAL16L8-10M,
TIBPAL16R4-10M,
TIBPAL16R6-10M,
TIBPAL16R8-10M
SRPS006D
TIBPAL16FT-7C
TIBPAL16R6-7C
L16R
TIBPAL16R4-7C
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TIBPAL20L8
Abstract: D33Q7 tibpal20r4
Text: TIBPAL20L8-7C, TIBPAL20R4-7C, TIBPAL20R6-7C, TIBPAL20R8-7C TIBPAL20L8-1 OM, TIBPAL20R4-10M, TIBPAL20R6-10M, TIBPAL20R8-10M HIGH-PERFORMANCE IM PACT-X PAL CIRCUITS S R P S 0 0 5 D - D 3 3 0 7 , O C T O B E R 1989 - R E V IS E D N O V E M B E R 1995 TIBPAL20L8'
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TIBPAL20L8-7C,
TIBPAL20R4-7C,
TIBPAL20R6-7C,
TIBPAL20R8-7C
TIBPAL20L8-1
TIBPAL20R4-10M,
TIBPAL20R6-10M,
TIBPAL20R8-10M
TIBPAL20R'
TIBPAL20L8
D33Q7
tibpal20r4
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T1BPAL16L8
Abstract: TIBPAL16R4-7C TIBPAL16R8-7C TIBPAL16R6-7C
Text: TIBPAL16L8-1 OM, TIBPAL16R4-1 OM, TIBPAL16R6-1 OM, T1BPAL16R81 OM TIBPAL1GL8-7C, TIBPAL16R4 7C, TIBPAL16R6-7C, TIBPAL16R8-7C HIGH PERFORMANCE IM P A C T X mPAL CIRCUITS D 3 1 1 5, M A Y 1 9 8 8 - REVISED OCTOBER 1989 T IB P A L 1 6 L 8 ' M SUFFIX . . . J P AC KAG E
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TIBPAL16L8-1
TIBPAL16R4-1
TIBPAL16R6-1
T1BPAL16R81
TIBPAL16R4
TIBPAL16R6-7C,
TIBPAL16R8-7C
T1BPAL16L8
TIBPAL16R4-7C
TIBPAL16R6-7C
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ERF 2030
Abstract: ERF 2030 mos fet c455 CY7C455 CY7C456 CY7C457 CY7C447 c4556 C4557
Text: / u h *f o . iviu i l u a y , w w i u u t i r p , 1 Revision: Tuesday, December 14,1993 C Y 7C 455 C Y 7C 456 C Y 7C 457 = = ^ C Y PR K SS p r e l im in a r y 512x18, lK x 18, and 2 K x l8 Cascadable Clocked FIFOs with Programmable Flags Features Functional Description
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CY7C455
CY7C456
CY7C457
CY7C455)
CY7C456)
CY7C457)
70-MHz
50-MHz
13H2T
ERF 2030
ERF 2030 mos fet
c455
CY7C457
CY7C447
c4556
C4557
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212H1
Abstract: No abstract text available
Text: CY7C451 CY7C453 PRELIM INARY CYPRESS = SEMICONDUCTOR Cascadeable Clocked 512 x 9 and Cascadeable Clocked 2K x 9 FIFOs with Programmable Flags Features F unctional D escription • 512 x 9 C Y 7C 451 a n d 2 ,048 x 9 (C Y 7C 453) F IF O b uffer m em ory •
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CY7C451
CY7C453
212H1
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idt7134
Abstract: CY7C1342 CY7C135
Text: fax id: 5203 ,.V.Ï.Ï.V.^ y nr' C Y 7C 135 Æ C Y p R E S S C Y 7C 1342 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features True Dual-Ported memory cells which allow sim ulta neous reads of the sam e memory location 4K x 8 organization
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CY7C135
CY7C1342
65-micron
7C1342
52-pin
IDT7134/IDT71342
CY7C1342
idt7134
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Untitled
Abstract: No abstract text available
Text: CY7C441 CY7C443 CYPRESS Clocked 5 1 2 x 9 , 2K x 9 FIFOs Features Functional D escription • 512 x 9 C Y 7C 441 and 2,048 x 9 (C Y 7C 443) FIFO buffer m em ory • H igh-sp eed 70-M H z op eration • S up p orts free-ru n n in g 50% duty cycle clock in p u ts
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300-m
CY7C441
CY7C443
CY7C443
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IDT7206
Abstract: P15 Package CY7C460A CY7C462A CY7C464A CY7C466A IDT7205 IDT7207 IDT7208
Text: fax id: 5420 CY7C460A,CY7C462A CY7C464A,CY7C466A PRELIMINARY r 11 D O Asynchronous, Cascadable 8K/16K/32K/64K x9 FIFOs Functional Description Features • H ig h-speed , low -pow er, first-in first-o u t F IF O m em o ries T he C Y 7 C 4 60A , C Y 7C 462A , C Y 7C 464A , and C Y 7 C 4 6 6 A are
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CY7C460A
CY7C462A
CY7C464A
CY7C466A
8K/16K/32K/64K
CY7C460A)
CY7C462A)
CY7C464A)
CY7C466A)
300-mil
IDT7206
P15 Package
CY7C466A
IDT7205
IDT7207
IDT7208
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c1449
Abstract: C144 ESS CY7C144 CY7C145 IDT7005 1BHC
Text: fax id: 5205 ,.V.V.V.V.^ !!rnr' C Y 7C 145 C Y 7C 144 CYPRESS 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True D u al-P o rted m em o ry ce lls w h ich allow sim u ltan eo u s read s o f th e s a m e m e m o ry location 8K x 8 o rg an iza tio n C Y 7 C 14 4
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CY7C145
CY7C144
CY7C144)
CY7C145)
65-micron
68-pin
64-pin
80-pin
IDT7005/IDT7015
c1449
C144 ESS
IDT7005
1BHC
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lm 257 st
Abstract: C4425
Text: CY7C4425/4205/4215 CY7C4225/4235/4245 CYPRESS 64, 256,512, IK, 2K, 4 K x l 8 Synchronous FIFOs F e a tu re s • O u tp u t E n ab le O E pin • 64 x 18 (C Y 7C 4425) • 68-p in P L C C an d 64 -p in T Q F P • 256 x 18 (C Y 7C 4205) F u n c tio n a l D e sc rip tio n
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100-M
CY7C4425/4205/4215
CY7C4225/4235/4245
lm 257 st
C4425
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CY7C441
Abstract: CY7C443
Text: CY7C441 CY7C443 0 CYPRESS Clocked 512 x 9, 2K x 9 FIFOs Features F unctional D escription • The C Y 7C 441 a n d C Y 7C 443 a re h ig h -sp ee d , low -pow er, first-in first-o u t F IF O m e m o rie s w ith clocked r e a d an d w rite in te rfa c e s. B o th F IF O s a re 9 b its
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CY7C441
CY7C443
CY7C441)
CY7C443)
70-MHz
300-mil
28-pin
CY7C443
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Z952
Abstract: c144 1S84 C144 e 5v CY7C144 CY7C145 IDT7005
Text: fax id: 5205 ,.V.Ï.Ï.V.^ y nr' C Y 7C 145 Æ C Y 7C 144 CYPRESS 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True D u al-P o rted m em o ry ce lls w h ich allow sim u ltan eo u s read s o f th e s a m e m e m o ry location 8K x 8 o rg an iza tio n C Y 7 C 14 4
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CY7C144)
CY7C145)
65-micron
68-pin
64-pin
80-pin
Z952
c144
1S84
C144 e 5v
CY7C144
CY7C145
IDT7005
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7c4096a
Abstract: 7C4096 4096A
Text: A S 7C 4096 A S 7C 34096 5V/3.3V 512K x8 CMOS SRAM Features • O ig a n iz a tb n : 5 2 4 ,2 8 8 w o iris x 8 b i s • H igh gpeed - 1 2 / 1 5 / 2 0 / 2 5 n sa d c h ess access tim e - 5 / 5 / 6 / 7 n s o u tp u t en ab ie access tim e • lo w pow e r consum p t b n
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7C1001-12
Abstract: CY7C1001 CY7C1002 as262
Text: s= p v n D r c c ~ Yi ilL jO o CY7C1001 CY7C1002 PRELIMINARY 256K x 4 Static RAM with Separate I/O Features Functional Description • t h e C Y 7C 1001 a n d C Y 7C 1002 a re highp e rfo rm a n c e C M O S static R A M s o rg a n iz ed as 262,144 x 4 b its w ith s e p a ra te I/O .
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CY7C1001
CY7C1002
7C1001)
as262
7C1001
38-00200-B
7C1001-12
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Untitled
Abstract: No abstract text available
Text: 4K x 4 Static RAM L 7C 171/172 Features Description_ □ 4K by 4 Static RAM with separate I/O , transparent write L7C171 , or high impedance write (L7C172) The L7C171 and L7C172 are highperformance, low-power CMOS static RAMs. The storage cells are organ
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L7C171)
L7C172)
L7C171
L7C172
Cypr02
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Untitled
Abstract: No abstract text available
Text: CRYSTAL OSCILLATORS VCXO MINIATURE HYBRID 0 25 6 35 i 0 32 Max ! (8 13 M ax ) - 0 02 VH2340 PIN 1 Voltaqe Control Input Vee (-5 2V) 8 Output n r u_ 0 815 M ax (20 7C M ax ) h SPECIFICATIONS MODEL V H Z 330D D Features Frequency Range Input Voltage & Current
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VH2340
VH2330
15MHz
45MHz
VH2340!
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80C32 Philips
Abstract: 87C52 U2840 P80C32 pin diagram of ic 8032 8032 philips 87C52 philips
Text: Philips Components-Signetics Document No. ECN No. Date of Issue January 1990 Status Preliminary Specification 80C32/80C52/87C52 CMOS single-chip 8-bit microcontroller Application Specific Product DESCRIPTION FEATURES The Philips 80C 3 2 /8 0C 5 2 /8 7C 5 2 is a
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80C32/80C52/87C52
lines21
80C32 Philips
87C52
U2840
P80C32
pin diagram of ic 8032
8032 philips
87C52 philips
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Untitled
Abstract: No abstract text available
Text: K S 5 7C 2016 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit CPU core. With an up-to-20-digit LCD direct drive capability and up to 40 pins for LCD segment data
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KS57C2016
up-to-20-digit
16-bit
100-pin
002b3b4
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circuit integrate TB 1226 CN
Abstract: RC4200ANB RC4200ADE RC420 RM4200 rv4200nb "analog multiplier" RC4200NB rc4200 raytheon
Text: RAYTHEON-, 7597360 SEMICONDUCTOR 57 T F 1 TSTTgbD RAYTHEON COf 5 7C “i 04913 D T-73- LINEAR INTEGRATED CIRCUITS PRODUCT SPECIFICATIONS R a y H ie o n Analog Multiplier Features • High accuracy Non-linearity — 0.1% maximum Temperature coeff icient— 0.005%/° C maximum
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T-73PRODUCT
RC4200
RC4200
RV4200NB
RC4200NB
RV4200ANB
RC4200ANB
circuit integrate TB 1226 CN
RC4200ADE
RC420
RM4200
"analog multiplier"
rc4200 raytheon
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