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    7A 50V P-CHANNEL MOSFET Search Results

    7A 50V P-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    7A 50V P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 500v 10A

    Abstract: FL14KM-10A
    Text: MITSUBISHI POWER MOSFET RY FL14KM-10A INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL14KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3


    Original     		PDF FL14KM-10A mosfet 500v 10A FL14KM-10A

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    Untitled

    Abstract: No abstract text available
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


    Original     		PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA)

    SMD05

    Abstract: No abstract text available
    Text: IRF9130SMD05DSG MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3.05 (0.120) 0.127 (0.005) 3 VDSS ID(cont) RDS(on) 10.16 (0.400) 5.72 (.225)


    Original     		PDF IRF9130SMD05DSG -100V SMD05 -100A/s SMD05

    IRF9130SMD05

    Abstract: IRFNJ9130 SMD05
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


    Original     		PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) -100A/ IRF9130SMD05 IRFNJ9130 SMD05

    FL7KM-12A

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET ARY FL7KM-12A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FL7KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2


    Original     		PDF FL7KM-12A FL7KM-12A

    KF7N50

    Abstract: KF7N50D KF7N50I
    Text: SEMICONDUCTOR KF7N50D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N50D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KF7N50D/I KF7N50D above25 dI/dt100A/, KF7N50 KF7N50D KF7N50I

    KF7N80

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KF7N80P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N80P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KF7N80P/F KF7N80P Fig15. Fig16. Fig17. KF7N80

    KF7N80

    Abstract: KF7N80F KF7N80P kf7n
    Text: SEMICONDUCTOR KF7N80P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N80P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KF7N80P/F KF7N80P Fig14. Fig15. Fig16. Fig17. KF7N80 KF7N80F KF7N80P kf7n

    KF7N60

    Abstract: kf7n60f KF7N60P
    Text: SEMICONDUCTOR KF7N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KF7N60P/F KF7N60P Fig15. Fig16. Fig17. KF7N60 kf7n60f KF7N60P

    KF7N60

    Abstract: kf7n60f KF7N60P KF7N6 KF7N60P/F
    Text: SEMICONDUCTOR KF7N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KF7N60P/F KF7N60P Fig15. Fig16. Fig17. KF7N60 kf7n60f KF7N60P KF7N6 KF7N60P/F

    Untitled

    Abstract: No abstract text available
    Text: 32E D • 023b32Q OGIVIOÌ b « S I P SIPMOS N Channel MOSFET BSP 295 SIEMENS/ SPCL-. SEMICONDS T -g ì-O S ' _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vis = 50V • Continuous drain current I d = 1-7A • Drain-source on-resistance


    OCR Scan     		PDF 023b32Q Q67000-S066 T-39-05

    FS14SM16A

    Abstract: FS14SM-16A
    Text: MITSUBISHI Neh POWER MOSFET FS14SM-16A HIGH-SPEED SWITCHING USE FS14SM-16A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 <t>3.2 uX kr • r 4.4 1.0 5.45 5.45 0.6 ] bd^ Q w q w e r V d s s . 8 0 0 V


    OCR Scan     		PDF FS14SM-16A FS14SM16A FS14SM-16A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS14SM-16A HIGH-SPEED SWITCHING USE FS14SM-16A •800V : »VDSS . • ro s ON (MAX) ■0.70Q • I d . . 1 4 A APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­


    OCR Scan     		PDF FS14SM-16A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK14UM-9 HIGH-SPEED SWITCHING USE APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Tc = 25°C Ratings Unit V dss Symbol Drain-source voltage Parameter Vgs = OV 450 V V gss Gate-source voltage


    OCR Scan     		PDF FK14UM-9 150ns O-220

    1 R 10E 3C, diode

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK14SM-9 HIGH-SPEED SWITCHING USE FK14SM-9 OUTLINE DRAWING Dim ensions in mm 4.5 15 • V dss . 450V • rDS ON (MAX) . 0 .6 5 Q


    OCR Scan     		PDF FK14SM-9 150ns 1 R 10E 3C, diode

    TTC 103

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS14SM-9 HIGH-SPEED SWITCHING USE FS14SM-9 • Voss . 450V • rDS ON (MAX) .0.52Í2 • ID . 14A


    OCR Scan     		PDF FS14SM-9 TTC 103

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET F S 1 4 S M - 1 8 A HIGH-SPEED SWITCHING USE FS14SM-18A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. | 3.2 * 4.4 1.0 5.45 5.45 0.6 4 Q w r q V d s s . 900V


    OCR Scan     		PDF FS14SM-18A

    mosfet 441

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK14UM-10 HIGH-SPEED SWITCHING USE FK14UM-10 • VDSS . 500V • rDS ON (MAX) .0.80Q •ID . 14A


    OCR Scan     		PDF FK14UM-10 150ns mosfet 441

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS14SM-14A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm .4.5 1 5.9 M A X . 1.5 T fW in ]¡ <t> 3.2 5.45 5.4 5 0.6 2.8 O 'i • V dss . 700V • rDS ON) (MAX)


    OCR Scan     		PDF FS14SM-14A

    L1037

    Abstract: L-1037
    Text: MITSUBISHI Neh POWER MOSFET FK14UM-9 HIGH-SPEED SWITCHING USE FK14UM-9 OUTLINE DRAWING Dimensions in mm 10.5MAX. , 4.5 % . 3.6 0.8 2.54 2.54 0.5 I . 2.6 -r X _ —I \ • V dss . 450V • rDS ON (MAX)


    OCR Scan     		PDF FK14UM-9 150ns O-220 L1037 L-1037

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET F S 1 4 S M -1 4 A HIGH-SPEED SWITCHING USE FS14SM-14A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 <t>3.2 uX • r 4.4 1.0 5.45 5.45 0.6 f= d J bd^ Q w r V d s s . 700V


    OCR Scan     		PDF FS14SM-14A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK14VS-9 HIGH-SPEED SWITCHING USE FK14VS-9 • V d s s . 450V • rDS ON (MAX) .0 .6 5 Q • I D .14A


    OCR Scan     		PDF FK14VS-9 150ns

    2100-CC

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK7SM-12 HIGH-SPEED SWITCHING USE FK7SM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1-5 <p 3.2 * 5.45 , 5.45 0.6 . 2.8 O .2 4 • TDS ON (MAX) •600V 1.63Q • I D . . • Integrated Fast Recovery Diode (MAX.) —


    OCR Scan     		PDF FK7SM-12 150ns 2100-CC