mosfet 500v 10A
Abstract: FL14KM-10A
Text: MITSUBISHI POWER MOSFET RY FL14KM-10A INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL14KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3
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FL14KM-10A
mosfet 500v 10A
FL14KM-10A
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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Untitled
Abstract: No abstract text available
Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)
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IRFNJ9130
IRF9130SMD05
-100V
SMD05
O-276AA)
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SMD05
Abstract: No abstract text available
Text: IRF9130SMD05DSG MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3.05 (0.120) 0.127 (0.005) 3 VDSS ID(cont) RDS(on) 10.16 (0.400) 5.72 (.225)
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IRF9130SMD05DSG
-100V
SMD05
-100A/s
SMD05
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IRF9130SMD05
Abstract: IRFNJ9130 SMD05
Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)
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IRFNJ9130
IRF9130SMD05
-100V
SMD05
O-276AA)
-100A/
IRF9130SMD05
IRFNJ9130
SMD05
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FL7KM-12A
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET ARY FL7KM-12A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FL7KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2
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FL7KM-12A
FL7KM-12A
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KF7N50
Abstract: KF7N50D KF7N50I
Text: SEMICONDUCTOR KF7N50D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N50D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF7N50D/I
KF7N50D
above25
dI/dt100A/,
KF7N50
KF7N50D
KF7N50I
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KF7N80
Abstract: No abstract text available
Text: SEMICONDUCTOR KF7N80P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N80P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF7N80P/F
KF7N80P
Fig15.
Fig16.
Fig17.
KF7N80
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KF7N80
Abstract: KF7N80F KF7N80P kf7n
Text: SEMICONDUCTOR KF7N80P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N80P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF7N80P/F
KF7N80P
Fig14.
Fig15.
Fig16.
Fig17.
KF7N80
KF7N80F
KF7N80P
kf7n
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KF7N60
Abstract: kf7n60f KF7N60P
Text: SEMICONDUCTOR KF7N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF7N60P/F
KF7N60P
Fig15.
Fig16.
Fig17.
KF7N60
kf7n60f
KF7N60P
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KF7N60
Abstract: kf7n60f KF7N60P KF7N6 KF7N60P/F
Text: SEMICONDUCTOR KF7N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF7N60P/F
KF7N60P
Fig15.
Fig16.
Fig17.
KF7N60
kf7n60f
KF7N60P
KF7N6
KF7N60P/F
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Untitled
Abstract: No abstract text available
Text: 32E D • 023b32Q OGIVIOÌ b « S I P SIPMOS N Channel MOSFET BSP 295 SIEMENS/ SPCL-. SEMICONDS T -g ì-O S ' _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vis = 50V • Continuous drain current I d = 1-7A • Drain-source on-resistance
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023b32Q
Q67000-S066
T-39-05
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FS14SM16A
Abstract: FS14SM-16A
Text: MITSUBISHI Neh POWER MOSFET FS14SM-16A HIGH-SPEED SWITCHING USE FS14SM-16A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 <t>3.2 uX kr • r 4.4 1.0 5.45 5.45 0.6 ] bd^ Q w q w e r V d s s . 8 0 0 V
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FS14SM-16A
FS14SM16A
FS14SM-16A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS14SM-16A HIGH-SPEED SWITCHING USE FS14SM-16A •800V : »VDSS . • ro s ON (MAX) ■0.70Q • I d . . 1 4 A APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per
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FS14SM-16A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK14UM-9 HIGH-SPEED SWITCHING USE APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Tc = 25°C Ratings Unit V dss Symbol Drain-source voltage Parameter Vgs = OV 450 V V gss Gate-source voltage
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FK14UM-9
150ns
O-220
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1 R 10E 3C, diode
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK14SM-9 HIGH-SPEED SWITCHING USE FK14SM-9 OUTLINE DRAWING Dim ensions in mm 4.5 15 • V dss . 450V • rDS ON (MAX) . 0 .6 5 Q
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FK14SM-9
150ns
1 R 10E 3C, diode
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TTC 103
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS14SM-9 HIGH-SPEED SWITCHING USE FS14SM-9 • Voss . 450V • rDS ON (MAX) .0.52Í2 • ID . 14A
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FS14SM-9
TTC 103
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET F S 1 4 S M - 1 8 A HIGH-SPEED SWITCHING USE FS14SM-18A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. | 3.2 * 4.4 1.0 5.45 5.45 0.6 4 Q w r q V d s s . 900V
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FS14SM-18A
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mosfet 441
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK14UM-10 HIGH-SPEED SWITCHING USE FK14UM-10 • VDSS . 500V • rDS ON (MAX) .0.80Q •ID . 14A
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FK14UM-10
150ns
mosfet 441
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS14SM-14A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm .4.5 1 5.9 M A X . 1.5 T fW in ]¡ <t> 3.2 5.45 5.4 5 0.6 2.8 O 'i • V dss . 700V • rDS ON) (MAX)
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FS14SM-14A
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L1037
Abstract: L-1037
Text: MITSUBISHI Neh POWER MOSFET FK14UM-9 HIGH-SPEED SWITCHING USE FK14UM-9 OUTLINE DRAWING Dimensions in mm 10.5MAX. , 4.5 % . 3.6 0.8 2.54 2.54 0.5 I . 2.6 -r X _ —I \ • V dss . 450V • rDS ON (MAX)
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FK14UM-9
150ns
O-220
L1037
L-1037
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET F S 1 4 S M -1 4 A HIGH-SPEED SWITCHING USE FS14SM-14A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 <t>3.2 uX • r 4.4 1.0 5.45 5.45 0.6 f= d J bd^ Q w r V d s s . 700V
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FS14SM-14A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK14VS-9 HIGH-SPEED SWITCHING USE FK14VS-9 • V d s s . 450V • rDS ON (MAX) .0 .6 5 Q • I D .14A
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FK14VS-9
150ns
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2100-CC
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK7SM-12 HIGH-SPEED SWITCHING USE FK7SM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1-5 <p 3.2 * 5.45 , 5.45 0.6 . 2.8 O .2 4 • TDS ON (MAX) •600V 1.63Q • I D . . • Integrated Fast Recovery Diode (MAX.) —
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FK7SM-12
150ns
2100-CC
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