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    Untitled

    Abstract: No abstract text available
    Text: DATE REV ECN APP'D. BY 1/23/06 A2 7454- JM .125 [3JS]=t.D10 [0 .2 5 ]— 1*.455 [11.56] MAX .020 [ 0 . 5 1 ] 7Z777> B STEIIARF P M E »TED NOTES: 1. CONNECTOR MATERIALS: HOUSING: THERMOPLASTIC UL94 V -0 CONTACTS/SHIELD: .050 [1.27] T YP— — TOL N O N -A C CU M


    OCR Scan     		PDF 7Z777> T650005

    TIBPSG507AC

    Abstract: No abstract text available
    Text: TIBPSG507AC 13 x 80 x 8 PROGRAMMABLE SEQUENCE GENERATOR I SRPS002D - D3029. MAY 1 9 8 7 -R E V IS E D NO VEM BER 1995 • JT O R 58-MHz Max Clock Rate N T P A C K A G E T O P V IE W • | • • • • Ideal for Waveform Generation and High-Performance State Machine


    OCR Scan     		PDF TIBPSG507AC 58-MHz SRPS002D D3029.

    transistor tt 2222

    Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
    Text: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and


    OCR Scan     		PDF 711002b BLY87C transistor tt 2222 Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060

    BLX13C

    Abstract: BY206 PHILIPS 4312 amplifier philips carbon film resistor 3mss HF SSB APPLICATIONS RF 28 v
    Text: bSE D m 7110ÛEL □Db34Mcl 42Ô M P H I N BLX13C PHILIPS I N T E R N A T I O N A L _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting amplifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear


    OCR Scan     		PDF Db34Mcl BLX13C 711005b 00fci34S7 7Z77839 BLX13C BY206 PHILIPS 4312 amplifier philips carbon film resistor 3mss HF SSB APPLICATIONS RF 28 v

    43120203664

    Abstract: BLW83 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor
    Text: bSE V m 7110&Eb □□b332*ì 75^ BiPHIN BLW83 _PHILIPS INTERNATIONAL_ ^ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear


    OCR Scan     		PDF BLW83 711002b 00b3337 BLW83 43120203664 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor

    tney2

    Abstract: HM5241 5241605
    Text: HM5241605 Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605 is offered in 2 banks for improved performance. _ F e a tu re s •3.3V Power s u p p


    OCR Scan     		PDF HM5241605 072-word 16-bit Hz/57 Hz/50 195/300/Kinko M19T041 tney2 HM5241 5241605

    Untitled

    Abstract: No abstract text available
    Text: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,


    OCR Scan     		PDF HB526C264EN-10IN, HB526C464EN-10IN 576-word 64-bit ADE-203-737A HB526C264EN, HB526C464EN HB526C264EN

    Untitled

    Abstract: No abstract text available
    Text: • b b s a ^ i a o s ^ a a 070 N AMER PHILIPS/DISCRETE ■ b lE A P X BLW32 D y v U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation


    OCR Scan     		PDF BLW32 BLW32

    Untitled

    Abstract: No abstract text available
    Text: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF BLY92C

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E b b 5 3 T 3 i o p a a T m sqs BLV11 ]> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF BLV11

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bSE I> • 0021711 TTfl APX BLY91C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF BLY91C

    4312 020 36640

    Abstract: BY206 BLX39 bv-300 carbon resistors
    Text: N AMER PHILIPS /D IS CR ET E t.b53T31 □ OE'ìSTG 653 I IAPX b'IE » A BLX39 H.F./V.H.F. POWER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF BLX39 110-j62 7Z77862 4312 020 36640 BY206 BLX39 bv-300 carbon resistors

    bly87c

    Abstract: transistor tt 2222 yl 1060
    Text: N AMER PHILIPS/DISCRETE bTE D • ttS3T31 ODSTbbb 415 H A P X BLY87C Jl V.H.F. POWER TRANSISTOR N-P-N silico n planar e pitaxial tra nsistor intended fo r use in class-A, B and C operated m obile, h.f. and v.h.f. transm itters w ith a nom inal su p p ly voltage o f 13,5 V . T h e tra nsistor is resistance sta bilize d and


    OCR Scan     		PDF bb53S31 BLY87C 7Z77729 7Z77730 bly87c transistor tt 2222 yl 1060

    RIL3N

    Abstract: transistor 1107 transistor tt 2222 W045 TT 2222 BLY91C j0718 RF POWER TRANSISTOR NPN vhf transistor L6
    Text: b SE 711002b D DDb3bll Sbl • PHIN BLY91C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF 711002b 00b3bll BLY91C OT-120. RIL3N transistor 1107 transistor tt 2222 W045 TT 2222 BLY91C j0718 RF POWER TRANSISTOR NPN vhf transistor L6

    transistor tt 2222

    Abstract: BLV20 TT 2222 RF POWER TRANSISTOR NPN vhf j0718 2222 123 capacitor philips ic TT 2222
    Text: PHILIPS INTERNATIONAL b5E J> m 711Gö5b CIQb2ü30 O^ä BLV20 V.H.F. PO W ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF BLV20 OT-123. 711002b 7z68947 7z68946 7z68948 transistor tt 2222 BLV20 TT 2222 RF POWER TRANSISTOR NPN vhf j0718 2222 123 capacitor philips ic TT 2222

    transistor tt 2222

    Abstract: 4312 020 36640 BLX39 PHILIPS 4312 amplifier vhf linear pulse power amplifier ferroxcube wideband hf choke TT 2222 npn
    Text: bSE » H 7110fl2fc> 00b34fl7 H31 « P H I N BLX39 PHILIPS IN TERNATIONAL _ H .F./V .H .F. POW ER T R A N S IS T O R N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h .f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is


    OCR Scan     		PDF 7110fl2fc> 00b34fl7 BLX39 110-j62 transistor tt 2222 4312 020 36640 BLX39 PHILIPS 4312 amplifier vhf linear pulse power amplifier ferroxcube wideband hf choke TT 2222 npn

    10J2

    Abstract: 3LV2 BLV20 TRANSISTOR 2X5 sot
    Text: •i bb53T31 0025^33 624 H A P X BLV20 b'ìE T> N AMER PH I L I P S /D IS C RE T E V.H.F. POWER TRANSISTOR N -P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters with a nom inal sup p ly voltage of 2 8 V . Th e transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF bb53T31 BLV20 OT-123. 7Z68947 7z68946 7Z68948 10J2 3LV2 BLV20 TRANSISTOR 2X5 sot

    77777AV

    Abstract: ST2156
    Text: HB526C264EN-10IN, HB526C464EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 64-bit, 66 MHz Memory Bus, 1/2-Bank Module 8/16 pcs o f 2 M x 8 Components HITACHI ADE-203-737D (Z) Rev. 4.0 Nov. 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and


    OCR Scan     		PDF HB526C264EN-10IN, HB526C464EN-10IN 64-bit, ADE-203-737D HB526C264EN, HB526C464EN HB526C264EN 16-Mbit HM5216805TT) 24C02) 77777AV ST2156

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT \i PD434008 4 M -BIT CMOS FAST STATIC RAM 512K-WORD BY 8 BITS Description The /¿PD434008 is a high speed, low p o w e r, 4 194 304 b its 524 288 w o r d s by 8 bits C M O S sta tic RAM T h e /¿PD434008 is packed in 36-pin p la s tic SOJ.


    OCR Scan     		PDF uPD434008 512K-WORD PD434008 36-pin uPD434008LE-20 uPD434008LE-25

    Untitled

    Abstract: No abstract text available
    Text: “ H Y U N D A I H Y 5 8 8 3 2 1 S e rie s _ 256Kx32bit Synchronous Graphics RAM PRELIMINARY Introduction Overview The eight megabit Synchronous Graphics RAM SGRAM is a single port, application specific memory device designed


    OCR Scan     		PDF 256Kx32bit b75Qfl DDD5370 1SC01-01-NOV96 HY588321 -01-NOV96

    Untitled

    Abstract: No abstract text available
    Text: 3.3 VOLT CMOS SyncFIFO 256x9, 512x9,1,024X9, 2,048 X 9 and 4,096 x 9 FEATURES: • • • • • • • • • • • • • • • • 256 x 9-bit organization IDT72V201 512 x 9-bit organization IDT72V211 1,024 x 9-bit organization IDT72V221 2,048 x 9-bit organization IDT72V231


    OCR Scan     		PDF 256x9, 512x9 024X9, IDT72V201 IDT72V211 IDT72V221 IDT72V231 IDT72V241 J32-1) PR32-1)

    MN5410

    Abstract: 34fi
    Text: UNITRODE/ MICRO NETWORKS OIE D -r T34flE7b OQOOfl'H 0 T-51-07-01 M N 5 4 t a 12 BIT 8 RANGE AUTORANGING A/D CONVERTER PRELIM INARY INFORMATION DESCRIPTIO N FEATURES « Compiete Autoranging System « 19 Bit Dynamic Range • 44 kc Throughput Rate • Internal


    OCR Scan     		PDF T34flE7b T-51-07-01 MN5410 34fi

    BLY92C

    Abstract: mfc capacitor philips
    Text: bSE J> • PHILIPS INTERNATIONAL 7110fiEb DObabST 4T1 HIPHIN BLY92C . y v. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF 711iOÃ BLY92C OT-120. 7Z68949 BLY92C mfc capacitor philips

    blw86

    Abstract: ferroxcube wideband hf choke BY206
    Text: m b5E » 711002b 0Db33Sû SST « P H I N BLW86 _PHILIPS INTERNATIONAL_ j H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF 711002b. 0Db33SÃ BLW86 blw86 ferroxcube wideband hf choke BY206