KSR1010
Abstract: KSR2010
Text: ¡SAMSUNG SEMICONDUCTOR E O INC I 7Tfci414S 0 00 71 05 5 | KSR2010 PNP EPITAXIAL SILICON TRANSISTOR - :-— r - 3 * l - 13 SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit
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00Q710S
KSR2010
--T-31-
KSR1010
KSR1010
KSR2010
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b?E » • 71b4m2 DD17Qbfl OSfl ■ PRELIMINARY KM23V81 OOB G CMOS MASK ROM 8M-Bit (1M X8/512K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode)
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71b4m2
DD17Qbfl
KM23V81
X8/512K
150ns
42-pin,
600mil,
44-pin,
KM23V8100B
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