2N6111
Abstract: No abstract text available
Text: 7TBT537 002^307 4 • 'T -3 > 3 M \ S G S -T H O M S O N iLKOTOKS S G S-THOMSON 2N6107/09/11 2N6288/90/92 3DE 3> GENERAL PURPOSE COMPLEMENTARY PAIRS DESCRIPTION The 2N6107, 2N6109, 2N6111, 2N6288, 2N6290 and 2N6292 are epitaxial-base silicon transistors In
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7TBT537
2N6107/09/11
2N6288/90/92
2N6107,
2N6109,
2N6111,
2N6288,
2N6290
2N6292
O-220
2N6111
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ST93CS66
Abstract: ST93CS67 st93CS66M1 but options mqs
Text: ST93CS66 ST93CS67 S G S -1 H 0 M S 0 N M [M ilLI gïï[i3©K3D(i§ SERIAL MICROWIRE BUS 4K (256 x 16) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING
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ST93CS66
ST93CS67
ST93CS66
ST93CS67
ST93CS66,
st93CS66M1
but options mqs
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON ST6260B ST6265B it e 8-BIT HCMOS MCUs WITH A/D CONVERTER, EEPROM & AUTO-RELOAD TIMER PRELIMINARY DATA • 3.0 to 6.0V Supply Operating Range ■ 8 MHz Maximum Clock Frequency ■ -40 to +85°C Operating Temperature Range ■ Run, Wait & Stop Modes
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ST6260B
ST6265B
PDIP20,
PS020
ST6260B)
PDIP28,
PS028
ST6265B)
VR001726
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1N914
Abstract: M28F512 T237
Text: S G S -T H O M S O N M28F512 M [f3 @ !!i© W ;i R î] S l 512K (64K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 100|jA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10|is
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M28F512
M28F512
7TBT537
PLCC32
PLCC32
1N914
T237
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M27C1024
Abstract: plcc44 drawing
Text: 7 7 S G S -T H O M S O N kI t *, MtgOSmitgTTDMQtg M27C1024 1 Megabit 64K x16 UV EPROM and OTP ROM • FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS’ CONSUMPTION: - Active Current 35mA - Standby Current 10O^iA
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M27C1024
M27C1024
plcc44 drawing
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