LP 8029
Abstract: DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N CQY37N cqy 17
Text: CQY 37 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
BPW17N
D-74025
LP 8029
DIN 7990
CQY 26
7922 diode
cqy 35 n
BPW17N
cqy 17
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PDF
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Untitled
Abstract: No abstract text available
Text: CQY37N Vishay Telefunken ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
D-74025
20-May-99
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PDF
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BPW17
Abstract: CQY37N BPW17N
Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
D-74025
20-May-99
BPW17
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PDF
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BPW17
Abstract: BPW17N CQY37 CQY37N
Text: CQY37N Vishay Semiconductors ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
D-74025
20-May-99
BPW17
CQY37
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PDF
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CQY37
Abstract: No abstract text available
Text: CQY37N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
D-74025
29-Mar-04
CQY37
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PDF
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Untitled
Abstract: No abstract text available
Text: CQY37N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
D-74025
05-May-04
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PDF
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CQY37
Abstract: No abstract text available
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
CQY37
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PDF
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Untitled
Abstract: No abstract text available
Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
D-74025
20-May-99
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PDF
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BPW17N
Abstract: CQY37N BPW17
Text: CQY37N GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical
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CQY37N
CQY37N
BPW17N
D-74025
15-Jul-96
BPW17
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PDF
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Untitled
Abstract: No abstract text available
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
2002/95/EC
2002/96/EC
18-Jul-08
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PDF
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BPW17
Abstract: telefunken BPW17N CQY37N
Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
D-74025
20-May-99
BPW17
telefunken
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PDF
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CQY37N
Abstract: 7922 diode BPW17 Infrared Emitting Diode BPW17N
Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : ∅ 1.8 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 12°
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Original
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CQY37N
BPW17N
2002/95/EC
2002/96/EC
CQY37N
18-Jul-08
7922 diode
BPW17
Infrared Emitting Diode
BPW17N
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PDF
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BPW17
Abstract: BPW17N CQY37N
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
2002/95/EC
2002/96/EC
D-74025
30-Mar-06
BPW17
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PDF
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BPW17
Abstract: BPW17N CQY37N
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
2002/95/EC
2002/96/EC
08-Apr-05
BPW17
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PDF
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BPW17N
Abstract: CQY37N
Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 12° • Low forward voltage
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Original
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CQY37N
BPW17N
2002/95/EC
2002/96/EC
CQY37N
11-Mar-11
BPW17N
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PDF
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BPW17
Abstract: BPW17N CQY37N
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
2002/95/EC
2002/96/EC
08-Apr-05
BPW17
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PDF
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BPW17
Abstract: BPW17N CQY37N
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
2002/95/Eed
08-Apr-05
BPW17
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PDF
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12109
Abstract: No abstract text available
Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 12° • Low forward voltage
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Original
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CQY37N
BPW17N
2002/95/EC
2002/96/EC
CQY37N
950trademarks
2011/65/EU
2002/95/EC.
12109
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PDF
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siemens m
Abstract: sensor x-ray dental sensor e2v MA 785 A dental x-ray sensor CCD76-40
Text: CCD76-40 Digital Intra-Oral X-ray Dental Sensor FEATURES The device is not designed for autoclaving but will withstand cleansing solutions defined within this data sheet. The package material is a conductive carbon fibre composite. * 1250 x 1640 Pixel Image Area
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CCD76-40
DHA-PC14-3G
DHA-HPD14-10
CCD76-40,
siemens m
sensor x-ray
dental sensor
e2v MA 785 A
dental x-ray sensor
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PDF
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7400AS
Abstract: No abstract text available
Text: Control & Measurement PRODUCT Catalogue www.trumeter.com 03 Dear Customer, It is with great pleasure and pride that I write this introduction to our brand new product catalogue. This is the best catalogue that we have ever produced and contains exciting new products, as well as all the core products that
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240VAC/DC,
7400AS
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PDF
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Untitled
Abstract: No abstract text available
Text: S 9 P S P T 7922 T 12-BIT, 30 MSPS, TTL, A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • • • • • • • Monolithic 12-Bit 30 MSPS Converter 64 dB SNR @ 3.58 MHz Input On-Chip Track/Hold
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OCR Scan
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12-BIT,
12-Bit
SPT7922
12-bit
SPT7922
D0-D11
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PDF
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SN54152
Abstract: SNS4151A sn7451b
Text: TYPES SN54150, SN54151A, SN54152A. SN54LS151, SN54LS152, SN54S151, SN74150, SN74151A, SN74LS151, SN74S151 DATA SELECTORS/MULTIPLEXERS B U L L E T I N N O . D L -S 7 6 1 1 8 1 9 , D E C E M B E R 1 9 7 2 - R E V I S E O O C T O B E R 1 9 7 6
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OCR Scan
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SN54150,
SN54151A,
SN54152A.
SN54LS151,
SN54LS152,
SN54S151,
SN74150,
SN74151A,
SN74LS151,
SN74S151
SN54152
SNS4151A
sn7451b
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PDF
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sn74181
Abstract: 7B222 SN74LS1S1 SN741S1
Text: TYPES Sttfi4H1, SN54LS181, SKS4SH1. TTL MSI s m tm su m s« « , s i m i ARITHMETIC LOGIC UNITS/FUNCTION GENEftATOftS B U LLE TIN NO. DL-S 7611831. DECEMBER 197» - REVISED OCTOBER 1976 SN841B1, SN54LS1S1, SN54S181 . . . J OR W PACKAGE SN741S1, SN74LS1S1.8N74S181 . . . J O H N PACKAGE
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OCR Scan
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SN54LS181,
SN841B1,
SN54LS1S1,
SN54S181
SN741S1,
SN74LS1S1
8N74S181
7S222
sn74181
7B222
SN741S1
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PDF
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TFK 839
Abstract: TFK 609 TFK 834 AEG TFK TELEFUNKEN TFK 809 TFK 893 TFK 9730 tfk 944 TFK 505 am diode tfk 817
Text: Tem ic Sales Offices TELEFUNKEN Semiconductors Addresses Europe Denmark Hungary THMIC Dansk c/o AFXi Dansk Aktieselskab Roskildevej 8-10 2620 Albcrtslund Tel: 45 42 64 85 22 Fax: 45 43 62 62 28 TEMIC TELEFUNKEN microelectronic GmbH Kruppstrasse 6 45128 Essen
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OCR Scan
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PDF
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