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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 7 0 0 1 7 7 3 5 Tlô I SMfiK C M O S SRAM KM 791001J 131,072 WORD x 9 Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 12.5, 15, 20ns Max. • Low Power Dissipation 791001J-12: 200mA (Max.)


    OCR Scan     		PDF 791001J KM791001J-12: 200mA KM791001J-15: 180mA KM791001J-20: 150mA KM791001J KM791001J OD17741

    A7910

    Abstract: No abstract text available
    Text: TDB7910 TDA7910 F Z 7 SG S-1H 0M S0N * 7 #» 5SlD g[S IILi(gTO [(!!IO(gi MEDIUM POWER SINGLE BIPOLAR OPERATIONAL AMPLIFIER . • . . . OUTPUT CURRENT UP TO 500 mA OFFSET VOLTAGE NULL CAPABILITY SHORT-CIRCUrT PROTECTION THERMAL OVERLOAD PROTECTION PLASTIC PACKAGE FOR EASY ASSEMBLY


    OCR Scan     		PDF TDB7910 TDA7910 7910-01JBL TDB7910 TDA7910 A7910