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    789101 Search Results

    789101 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPD789101AMC-XXX-5A4-E2-A Renesas Electronics Corporation 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LSSOP, /Embossed Tape Visit Renesas Electronics Corporation
    UPD789101AMC-XXX-5A4-E1-A Renesas Electronics Corporation 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LSSOP, /Embossed Tape Visit Renesas Electronics Corporation
    UPD789101AMC-XXX-5A4-A Renesas Electronics Corporation 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LSSOP, /Embossed Tape Visit Renesas Electronics Corporation
    UPD789101AMC(A1)-XXX-5A4 Renesas Electronics Corporation 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LSSOP, /Embossed Tape Visit Renesas Electronics Corporation
    UPD789101AMC-XXX-5A4-E1 Renesas Electronics Corporation 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LSSOP, /Embossed Tape Visit Renesas Electronics Corporation
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    789101 Price and Stock

    Molex 0878910106

    CONN HEADER VERT 1POS
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    DigiKey 0878910106 Tray 2,822 1
    • 1 $0.26
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    • 1000 $0.11672
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    Sager 0878910106 14,400
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    SAB Bröckskes 7891014

    CABLE 20COND 26AWG GRY SHD 1=1FT
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    DigiKey 7891014 1
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    RS 7891014 Linear Foot 16 Weeks 1
    • 1 $19.95
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    • 100 $18.75
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    Molex 0857891017

    POE PLUS ENABLED ICM 1X1 LED YW/
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    DigiKey 0857891017 Bulk 396
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    Sager 0857891017 396
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    Weidmüller Interface GmbH & Co. KG 7789101050

    CABLE ASSEMBLY INTERFACE 16.4'
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    DigiKey 7789101050 Bulk 1
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    Mouser Electronics 7789101050
    • 1 $29.61
    • 10 $25.94
    • 100 $23.22
    • 1000 $21.93
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    Weidmüller Interface GmbH & Co. KG 7789101010

    CABLE ASSEMBLY INTERFACE 3.28'
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    DigiKey 7789101010 Bulk 1
    • 1 $24.29
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    Avnet Americas 7789101010 Bulk 1
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    Mouser Electronics 7789101010
    • 1 $20.42
    • 10 $17.7
    • 100 $14.59
    • 1000 $13.32
    • 10000 $13.32
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    Find more 789101 price and stock on Findchips.com

    789101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ba1s

    Abstract: No abstract text available
    Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


    Original     		PDF IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s

    Untitled

    Abstract: No abstract text available
    Text: FMD4A32LCx–30Ex 128M 4Mx32 Low Power DDR SDRAM Revision 0.2 Jan. 2009 Rev. 0.2, Jan. ‘09 1 FMD4A32LCx–30Ex Document Title 128M(4Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Jul. 2nd , 2008 Preliminary 0.0 Initial Draft


    Original     		PDF FMD4A32LCxâ 4Mx32)

    Untitled

    Abstract: No abstract text available
    Text: FMD4B32LBx–37Ex 256M 8Mx32 Low Power DDR SDRAM Revision 1.0 Jan. 2009 Rev. 1.0, Jan. ‘09 1 FMD4B32LBx–37Ex Document Title 256M(8Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Jan. 17th, 2008


    Original     		PDF FMD4B32LBxâ 8Mx32)

    Untitled

    Abstract: No abstract text available
    Text: 8 7 6 5 4 3 2 1 NOTES 3MTM RIBBON CABLE WIREMOUNT SOCKET ASSEMBLY, 1.27mm 0.050" PITCH, 451 SERIES 1. MATERIAL: BODY: PBT, UL94V-0 COVER: PBT, UL94V-0 STRAIN RELIEF: STAINLESS STEEL CONTACTS: BeCu ALLOY. Performance: Current Rating: 1.0 A, all lines energized,


    Original     		PDF UL94V-0 1250VACrms

    FY520

    Abstract: FW533 MT28F322D18
    Text: ADVANCE 2 MEG x 16 BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa


    Original     		PDF MT28F322D18FH 100ns MT28F322D18FH FY520 FW533 MT28F322D18

    PC28F256P33

    Abstract: JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74
    Text: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read


    Original     		PDF P33-65nm) 256-Mbit, 512-Mbit 256M/256M) 105ns 16-word 52MHz 512-word 32-KByte PC28F256P33 JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74

    JS28F256P33

    Abstract: PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85
    Text: Numonyx StrataFlash Embedded Memory P33 Datasheet Product Features „ „ „ „ High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst


    Original     		PDF 52MHz 32-KByte 128-KByte 130nm 64-Mbit RD48F2000P0XBQ0 128-Mbit RD48F3000P0XBQ0 256-Mbit RD48F4000P0XBQ0 JS28F256P33 PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85

    28F256L30

    Abstract: 28F128L30 28F640L30
    Text: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0 Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 90 ns initial access — 50MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode


    Original     		PDF 28F640L30, 28F128L30, 28F256L30 50MHz 16K-Word 64K-Word com/design/flcomp/packdata/298049 28F256L30 28F128L30 28F640L30

    M69KB128AA

    Abstract: BCR10
    Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and


    Original     		PDF M69KB128AA 104MHz M69KB128AA BCR10

    Straddle-Mount

    Abstract: PCIe cable pinout 78910 PR04 B0813 pci-e drawing
    Text: 8 7 6 5 4 3 2 1 NOTES 1 DIMENSIONS ARE IN MILLIMETERS. 3MTM TWIN AXIAL CABLE ASSEMBLY FOR PCIe X16 EXTENDER CARD APPLICATIONS 2 3MTM RIBBON TWINAX DESCRIPTION: 30 AWG, SILVER PLATED SIGNAL WIRE IMPEDANCE: 85 5 OHM OVERALL RIBBON WIDTH: 24.90 MM OVERALL RIBBON THICKNESS: 0.75 MM


    Original     		PDF SP5144 8KC3-0726-XXXX, Straddle-Mount PCIe cable pinout 78910 PR04 B0813 pci-e drawing

    K1B5616BBM

    Abstract: K1B5616BA D254 D255 K1B5616BAM K1B5616BAM-I UtRAM Density
    Text: Preliminary UtRAM K1B5616BA B M 256Mb (16M x 16 bit) UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN


    Original     		PDF K1B5616BA 256Mb K1B5616BBM D254 D255 K1B5616BAM K1B5616BAM-I UtRAM Density

    BCR10

    Abstract: M69KM096AA
    Text: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ Multiplexed Address/Data bus


    Original     		PDF M69KM096AA 83MHz 32-Word) 83MHz BCR10 M69KM096AA

    Untitled

    Abstract: No abstract text available
    Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and


    Original     		PDF M69KB128AA 104MHz

    Untitled

    Abstract: No abstract text available
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56

    cr1 5 p26z

    Abstract: No abstract text available
    Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ


    Original     		PDF 128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 cr1 5 p26z

    CR10

    Abstract: M58LR128HB M58LR128HT VFBGA56
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB VFBGA56 CR10 M58LR128HB M58LR128HT VFBGA56

    FY550

    Abstract: 44A4h
    Text: 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.22µm Process Technology FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture – Support for true concurrent operation with zero


    Original     		PDF MT28F322D20 MT28F322D18 MT28F322D18 110ns/30 MT28F322D18FH FY550 44A4h

    Untitled

    Abstract: No abstract text available
    Text: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W2MW16BGB 16-word 09005aef82832fa2 09005aef82832f5f

    BCR100

    Abstract: No abstract text available
    Text: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:


    Original     		PDF 128Mb/64Mb 09005aef81d721fb pdf/09005aef81d72262 BCR100

    pc28f128p33b

    Abstract: PC28F128P33 JS28F128P33BF js28f640p33 pc28f128p33bf60 P33-65nm RC28F128P33 JS28F128P33TF70 JS28F128P33 PC28F128P33T
    Text: Numonyx AxcellTM P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell SBC Datasheet Product Features „ „ „ High performance: — 60ns initial access time for Easy BGA — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read


    Original     		PDF P33-65nm 128-Mbit, 64-Mbit 52MHz 256-word 32-KByte 128-KByte P33-65nm 40Mhz pc28f128p33b PC28F128P33 JS28F128P33BF js28f640p33 pc28f128p33bf60 RC28F128P33 JS28F128P33TF70 JS28F128P33 PC28F128P33T

    SR52

    Abstract: FY618 SR-52
    Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM


    Original     		PDF 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 SR52 FY618 SR-52

    a6583

    Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
    Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R8000T0 M30L0R8000B0 54MHz a6583 CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0

    ba 5937 fp

    Abstract: No abstract text available
    Text: PRODUCT PREVIEW in te l FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT 28F800F3, 28F160F3 Includes Extended and Automotive Temperature Specifications • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads


    OCR Scan     		PDF 28F800F3, 28F160F3 ba 5937 fp

    28F800F3T

    Abstract: te28f800f3t120 B3T125
    Text: intei PRELIMINARY 3 VOLT FAST BOOT BLOCK FLASH MEMORY 28F800F3 and 28F160F3 x16 • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads — Asynchronous Page-Mode Reads ■ Supports Code Plus Data Storage — Optimized for Flash Data Integrator


    OCR Scan     		PDF 28F800F3 28F160F3 32-Kword 56-Lead 28F800F3T te28f800f3t120 B3T125