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    780-4 TRANSISTOR Search Results

    780-4 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    780-4 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13786

    Abstract: L1320
    Text: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel


    Original     		PDF PD84006L-E 2002/95/EC PD84006L-E 13786 L1320

    transistor NF j1 marking code

    Abstract: PD84006L-E EEVHB1V100P EXCELDRC35C J-STD-020B UHF rfid reader grm39
    Text: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel


    Original     		PDF PD84006L-E 2002/95/EC PD84006L-E transistor NF j1 marking code EEVHB1V100P EXCELDRC35C J-STD-020B UHF rfid reader grm39

    Untitled

    Abstract: No abstract text available
    Text: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel


    Original     		PDF PD84006L-E 2002/95/EC PD84006L-E

    NV SMD TRANSISTOR

    Abstract: AN1294 UHF rfid reader ma706
    Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■


    Original     		PDF PD84006-E 2002/95/EC PowerSO-10RF PD84006-E NV SMD TRANSISTOR AN1294 UHF rfid reader ma706

    81A7031-50-5F

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: A2T07D160W04S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF A2T07D160W04S A2T07D160W04SR3 81A7031-50-5F

    Untitled

    Abstract: No abstract text available
    Text: BD777 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors designed for general purpose amplifier and high−speed switching applications. http://onsemi.com • High DC Current Gain • • •


    Original     		PDF BD777 BD776 BD777, BD780 BD777/D

    BD775

    Abstract: BD779 transistor BD780 BD776 BD780 BD777 BD778
    Text: MOTOROLA Order this document by BD777/D SEMICONDUCTOR TECHNICAL DATA NPN BD777 PNP BD776 BD778 BD780 * Plastic Darlington Complementary Silicon Power Transistors . . . designed for general purpose amplifier and high–speed switching applications. • High DC Current Gain


    Original     		PDF BD777/D* BD777/D BD775 BD779 transistor BD780 BD776 BD780 BD777 BD778

    Untitled

    Abstract: No abstract text available
    Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz


    Original     		PDF PD84006-E 2002/95/EC PowerSO-10RF PD84006-E

    ta-12 stancor

    Abstract: B20000 Ta57 stancor
    Text: I M P E D A N C E M A T C H I N G T R A N S F O R M E R S Transistor Transformers Style B STANCOR PART Sec. NUMBER Style A Impedance Ohms Pri. Sec. TAPC-35 B TAPC-38 B 500 C.T. TA-21 C 500 C.T. TA-35 C TA-38 C 500 C.T. B TA-3 A 100 C TA-42 A 500 C.T. TA-52


    Original     		PDF TAPC-35 TAPC-38 TA-21 TA-35 TA-38 TA-42 TA-52 TAPC-52 TAPC-63 TA-39 ta-12 stancor B20000 Ta57 stancor

    BD775

    Abstract: BD780 BD779 bd777 BD776 BD778 Case 77-08
    Text: NPN Plastic Darlington Complementary Silicon Power Transistors BD777 PNP BD776 BD778 . . . designed for general purpose amplifier and high–speed switching applications. BD780 * • High DC Current Gain • • • hFE = 1400 Typ @ IC = 2.0 Adc Collector–Emitter Sustaining Voltage — @ 10 mAdc


    Original     		PDF BD777 BD776 BD778 BD780 BD777, r14525 BD777/D BD775 BD780 BD779 bd777 BD776 BD778 Case 77-08

    74ACxxx

    Abstract: mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25
    Text: AN1403/D FACT I/O Model Kit Prepared by: Willard Tu http://onsemi.com APPLICATION NOTE OBJECTIVE Transistor Parameters for Typical FACT Output Buffers The objective of providing a spice modelling kit is to allow the customer to perform system level interconnect


    Original     		PDF AN1403/D 1599U 375E-4 875E-3 74ACxxx mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25

    transistor BC148

    Abstract: BC147 BC148 BC108* BC109* BC110* TRANSISTORS sim 300 w BC149 BC148 transistor BC158 AF379 BC157
    Text: Inventory o f discrete standard Types 9.1. Transistors Type P = P N P (N = N P N ) C o lle c t o r base re v e rse v o lt a g e V<:b o ; V ( ' ' c e s ): V A F200U P -2 5 AF 201 U AF 202 P P -2 5 -2 5 A F 20 2S P -3 2 AF 239 P A F 23 9S A F 240 AF 279 C o lle c t o r


    OCR Scan     		PDF AF200U AF202S AF239S T0-50 T0-50 OT-30 T0-18 BC108 BC109 transistor BC148 BC147 BC148 BC108* BC109* BC110* TRANSISTORS sim 300 w BC149 BC148 transistor BC158 AF379 BC157

    IEC134

    Abstract: LAE4002S
    Text: I-« N AMER P H IL IP S /D IS C R E T E OLE D • hbSBTBl 0014*107 T ■ LAE4002S MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter ciass-A linear power amplifiers up to 4 GHz. Diffused emitter . ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure


    OCR Scan     		PDF LAE4002S OT-100. L-13-â Zo-50n IEC134 LAE4002S

    tf5r21zz

    Abstract: No abstract text available
    Text: Audio I DO-T Transistor Transformers L o c a t in g L in e Type No. M IL P a rt N o . 1 D 0 -T 4 4 M 2 7 /1 7 2 01 ? D O -T 2 9 M 2 7 /1 7 2 - 0 2 3 D 0 -T 1 2 4 D 0 -T 1 3 P r l. Im p . O 8 0 CT UNIT LOCATION KEY Located Type No. on Line D O -T 1 D O -T 2


    OCR Scan     		PDF

    DIAGRAM VOLTAGE REGULATOR 28 volts

    Abstract: HXK32001XX J-10 SH3200 SH3201 ScansUX984
    Text: SH3200 ADJUSTABLE POSITIVE DC VOLTAGE REGULATOR FAIRCHILD HYBRID CIRCUIT • SHORT CIRCUIT PROTECTED PHYSICAL DIMENSIONS • BROAD RANGE OF OUTPUT VOLTAGES . . . 8.5 V TO 30 V in accordance with JE D E C TO-99 o u tline • LOAD CURRENTS 0 TO 50 mA AND 5.0 AMPS USING AN EXTERNAL PASS TRANSISTOR


    OCR Scan     		PDF SH3200 SH3201 DIAGRAM VOLTAGE REGULATOR 28 volts HXK32001XX J-10 ScansUX984

    transistor b2u

    Abstract: No abstract text available
    Text: Section 12: SEMISTACK Power Semiconductor Assemblies with Diodes, Thyristors, SEMIPACK Modules or SEMIPONT Bridge Rectifiers as well as SEMITRANSIGBT, MOSFET and Darlington Transistor Modules from 10 to 1000’s of Amps; 12 Voc to over 1000 Vrms mains using


    OCR Scan     		PDF

    2SD780

    Abstract: 1DW transistor TRANSISTOR 1dw
    Text: 2 S D 7 8 0 ,2 S D 7 8 0 R Audio Frequency Power Amplifier NPN Silicon Epitaxial Transistor • Complimentary to 2SB736,2SB736R PACKAGE DIMENSIONS • High DC Current Gain: h FE = 200 TYP. <VCE = 1.0V, l c =50mA in m illim e te rs inches) 2 5 81 (0 098J


    OCR Scan     		PDF 2SD780, 2SD780R 2SB736 2SB736R 2SD780 1DW transistor TRANSISTOR 1dw

    400HA-12E

    Abstract: CM100TF-12e
    Text: POliJEREX I NC BTE I> • 72=^21 DDG37SS 1 HPRX T^2 W HHBSX_ _ Powerex, Inc., HilUs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 EFFICIENT E-SERIES IGBTMOD TRANSISTOR POWER MODULES


    OCR Scan     		PDF DDG37SS BP107, 400HA-12E CM100TF-12e

    d3008

    Abstract: Class E power amplifier, 13.56MHz 13.56Mhz class e power amplifier k 1356 class e and 13.56MHz
    Text: A d v a n ced P o w er Te c h n o l o g y * ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. Pi F OPERATION 1-15MHz POWER MOS IV N -C H A N N EL ENHANCEMENT MODE RF POWER MOSFET P f& Q M M The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull


    OCR Scan     		PDF ARF442 56MHz ARF443 56MHz ARF443. 1-15MHz) d3008 Class E power amplifier, 13.56MHz 13.56Mhz class e power amplifier k 1356 class e and 13.56MHz

    BD779

    Abstract: TRANSISTOR B 834 bd777 BD776
    Text: MOTOROLA Order this document by BD777/D SEMICONDUCTOR TECHNICAL DATA NPN BD777 Plastic Darlington Com plem entary Silicon Power Transistors PNP BD776 BD778 . . . designed for general purpose amplifier and high-speed switching applications. • • • •


    OCR Scan     		PDF BD777/D BD776 BD777, BD780 BD777 BD776 BD778 O-225AA BD779 TRANSISTOR B 834 bd777

    pnp 8 transistor array

    Abstract: ALA200 PNP UHF transistor npn 8 transistor array 1100 RESISTOR ARRAY 003FI
    Text: Preliminary Data Sheet fg p AT&T 9?^¿93 ALA200 UHF Linear Array C om plem entary NPN and PNP Transistors Description The ALA200 UHF Linear Array is a semi-custom integrated circuit consisting of very high-frequency uncommitted vertical NPN and PNP transistors, capacitors, and ion-implanted resistors. Designed on a


    OCR Scan     		PDF ALA200 51AL230240 D-8000 DS87-297LBC pnp 8 transistor array PNP UHF transistor npn 8 transistor array 1100 RESISTOR ARRAY 003FI

    GL RESISTOR ARRAY

    Abstract: ALA200 1100 RESISTOR ARRAY
    Text: PraMMnary Data Sheet fjp A T & T A L A 200 U H F L in e a r A rray C o m p le m e n ta ry N P N and P N P T ran sistors Description The ALA200 UHF Linear Array is a semi-custom integrated circuit consisting of very high-frequency uncommitted vertical NPN and PNP transistors, capacitors, and ion-implanted resistors. Designed on a


    OCR Scan     		PDF ALA200 51AL230240 D-8000 DS87-297LBC GL RESISTOR ARRAY 1100 RESISTOR ARRAY

    F624-19Q1

    Abstract: Class E power amplifier, 13.56MHz 13.56Mhz class e power amplifier 13.56Mhz rf amplifier Class B power amplifier, 13.56MHz class e and 13.56MHz F624-19 power amplifier 13.56MHz 13.56MHZ mosfet
    Text: ADVANCED W /Æ P o w e r M Te c h n o lo g y • R ARF444 300W 300V 13.56MHz ARF445 300W 300V 13.56MHz THE ARF444 PIN-OUTS ARE MIRROR IMAGE OF THE ARF445. RF OPERATION 1-15MHz POWER MOS IV® N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET T he A R F 444 and AR F445 co m prise a sym m etric pair o f RF pow er transistors designed fo r push-pull scientific,


    OCR Scan     		PDF ARF444 56MHz ARF445 56MHz ARF445. 1-15MHz) F624-19Q1 Class E power amplifier, 13.56MHz 13.56Mhz class e power amplifier 13.56Mhz rf amplifier Class B power amplifier, 13.56MHz class e and 13.56MHz F624-19 power amplifier 13.56MHz 13.56MHZ mosfet

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o l o g y ARF440 ARF441 125W 50V 13.56MHz 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION 1-15MHz POWER MOS IV« N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET_ T he A R F 440 and ARF441 com prise a sym m etric pair of RF pow er transistors designed fo r n a rro w -b an d push-pull


    OCR Scan     		PDF ARF440 ARF441 56MHz ARF440 ARF441. 1-15MHz) ARF441