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    Untitled

    Abstract: No abstract text available
    Text: HM66205 S e rie s-524,288-Word x 8-Bit High Density CM O S Static RAM Module • PIN ARRANGEMENT Description The HM66205 is a high density 4M-bit static RAM module consisting of 4 pieces HM628128LTS products TSOP type 1M static RAM and a HD74ACT138FP equivalent product (SOP


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    PDF HM66205 s------------524 288-Word HM628128LTS HD74ACT138FP HM6620S

    TC55V4376FF

    Abstract: TC55V4376FF-100
    Text: TO SH IBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor


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    PDF TC55V4376FF-100 072-WORD 36-BIT TC55V4376FF 592-bit LQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V4336FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4336FFI is a 4,194,304-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 32 bits. It is designed for use as a secondary cache to support microprocessor


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    PDF TC55V4336FFI-83 TC55V4336FFI 304-bit LQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor


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    PDF TC55V4376FF-100 TC55V4376FF 592-bit I/032, LQFP100-P-1420-0

    tney2

    Abstract: HM5241 5241605
    Text: HM5241605 Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605 is offered in 2 banks for improved performance. _ F e a tu re s •3.3V Power s u p p


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    PDF HM5241605 072-word 16-bit Hz/57 Hz/50 195/300/Kinko M19T041 tney2 HM5241 5241605

    pin diagram 7400 series

    Abstract: CI 7474 hs 111-0 7400 fan-out 74164 TTL CI 7400 7474 pin out diagram CI 7400 ttl 74164 HS5212
    Text: Hybrid Systems W W CORPORATION HS 5210 Series 12-Bit Adjustment Free ADCs FEATURES • 12-Bit Conversion in 10 m s , Typical; 13 \x s, Maximum ■ Adjustment-Free, ±0.0125% Linearity ■ Low Power.670 mW, Typical ■ Wide Operating Temperature Range.


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    PDF 12-Bit 24-Pin, MIL-STD-883 24-pin o11-o11- HS52XXC HS52XXB 12-Bits pin diagram 7400 series CI 7474 hs 111-0 7400 fan-out 74164 TTL CI 7400 7474 pin out diagram CI 7400 ttl 74164 HS5212

    KM658128

    Abstract: No abstract text available
    Text: m s« KM658128 SAMSUNG Semiconductor 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM May 1991 FEATURES DESCRIPTION • Fast Access Time: — CE Access Tim e. 80, 100, 120ns Max — Cycle Time Random Read/Write Cycle Time .130, 160, 190ns (Max)


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    PDF KM658128 120ns 190ns KM658128 576-bit 200mW 5K/1-91

    Untitled

    Abstract: No abstract text available
    Text: MN5240 ^ MICRO NETWORKS 10 and 12-Bit HIGH-SPEED CONVERTERS DESCRIPTION FEATURES • Fast Conversion Times: 5ftsec Max for 12 Bits 4.2/xsec Max for 10 Bits • Complete A/D Function: Internal Clock Internal Reference Input Buffer Short-Cycle Pin • No Clock Adjusting


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    PDF MN5240 12-Bit 32-Pin 10-bit MN5240

    Untitled

    Abstract: No abstract text available
    Text: ADC87 mrnm Micro Networks 12-Bit, 8/isec MILITARY A /D C O N V E R T E R a DIVISION O f U N tT M O O « CORPORATION DESCRIPTION FEATURES • Fully Guaranteed -55°C to +125°C Operation • 8/isec Max Conversion Time • Complete/Versatile A/D Function: Internal or External Clock


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    PDF ADC87 12-Bit, 20ppm/Â ADC84/85 MIL-STD-883 MIL-STD-1772 ADC87 ADC87Hâ ADC87H

    multiturn preset potentiometer

    Abstract: No abstract text available
    Text: MN5240 10 an d 12-Bit H IG H -S P E E D A /D C O N V E R T E R S MICRO NETWORKS DESCRIPTION • Fast Conversion Times: 5/iSec Max for 12 Bits 4.2/^sec Max for 10 Bits • Complete A/D Function: Internal Clock Internal Reference Input Buffer Short-Cycle Pin


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    PDF MN5240 12-Bit 32-Pin 10-bit multiturn preset potentiometer

    TC55V4376FFI-83

    Abstract: No abstract text available
    Text: TO SH IBA TC55V4376FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FFI is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor


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    PDF TC55V4376FFI-83 072-WORD 36-BIT TC55V4376FFI 592-bit LQFP100-P-1420-0 TC55V4376FFI-83

    TC55V4336FFI-83

    Abstract: 032J
    Text: TOSHIBA TC55V4336FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4336FFI is a 4,194,304-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 32 bits. It is designed for use as a secondary cache to support microprocessor


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    PDF TC55V4336FFI-83 072-WORD 32-BIT TC55V4336FFI 304-bit LQFP100-P-1420-0 TC55V4336FFI-83 032J

    Untitled

    Abstract: No abstract text available
    Text: HM62V8128 Series 131072-Word X Product Preview 8-Bit High Speed CMOS Static RAM D escription O rd e rin g In fo rm atio n The H itachi H M 62V 8128 is a CM OS static RAM organized 128 kw ord X 8 bit. It realizes h ig h e r d en sity , h ig h e r p erfo rm a n ce and low


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    PDF HM62V8128 131072-Word

    Untitled

    Abstract: No abstract text available
    Text: HM534253 S eries-262,144-Word x 4-Bit Multiport CMOS Video RAM • DESCRIPTION HM 534253JP Series The HM534253 is a 1-Mbit multiport video RAM equipped with a 256k-word x 4-bit dynamic RAM and a 512-word x 4-bit SAM serial access memory . Its RAM


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    PDF HM534253 eries----------------------262 144-Word 534253JP 256k-word 512-word HM534253.

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC55V4336FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4336FF is a 4,194,304-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 32 bits. It is designed for use as a secondary cache to support microprocessor


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    PDF TC55V4336FF-100 TC55V4336FF 304-bit LQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: II MN5210 Series [I mb 13jisec, 12-Bit M ILITA R Y AID C O N V E R T E R S MICRO NETWORKS DESCRIPTION • 13/isec Maximum Conversion Time • +1/2LSB Linearity and No Missing Codes Guaranteed Over Temperature • Small 24-Pin DIP • +1LSB Zero Error • +2LSB Absolute Accuracy


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    PDF MN5210 13jisec, 12-Bit 13/isec 24-Pin MIL-H-38534 MIL-STD-1772 12-bit,

    CL2C12

    Abstract: No abstract text available
    Text: MOSEL- VITELIC V53C100N HIGH PERFORMANCE, 3.3 VOLT 1 M X 1 B IT FA ST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C100N 60/60L PRELIMINARY 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 35 ns 40 ns 45 ns


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    PDF V53C100N 60/60L V53C100N 70/70L 80/80L V53C100NL V53C100N-80 400fiA V53C100NL CL2C12

    mcm2018

    Abstract: mcm2018a
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MCM2018A F a st 1 6 K B it S ta tic R A M The M C M 2 0 1 8 A is a 16,384 bit static random access memory organized as 2048 w ords by 8 bits, fabricated using Motorola's high-performance silicon-gate M O S {H M O S I technology. It uses an innovative design approach which combines the


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    PDF MCM2018A sub-100 777777T MCM2018A 300-mil mcm2018

    8 x 8 LED Dot Matrix 8086 assembly language code

    Abstract: 5 x 7 LED Dot Matrix 8086 assembly language code interfacing STEPPER MOTOR with 8086 microprocessor 8085 MICROCOMPUTER SYSTEMS USERS MANUAL stepper motor interface with 8086 block diagram 8086 microprocessor mini project circuit Interfacing of 16k EPROM and 8K RAM with 8085 AmSYS29 Interfacing of 32k ram and 16K EPROM with 8085 str f 6264
    Text: MULTIBUS OEM Products and Microprogrammable Development Tools E lectron ic C om ponents Instru m e n ta tion and C om puter Systems 5th Floor, Randover House, Dover Street, R andburg. South Africa. s i P.O. Box 56420. Pinegow rie 2123. South Africa. 011 789-2400 (5 lines).


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    PDF F-94588 D-3108 8 x 8 LED Dot Matrix 8086 assembly language code 5 x 7 LED Dot Matrix 8086 assembly language code interfacing STEPPER MOTOR with 8086 microprocessor 8085 MICROCOMPUTER SYSTEMS USERS MANUAL stepper motor interface with 8086 block diagram 8086 microprocessor mini project circuit Interfacing of 16k EPROM and 8K RAM with 8085 AmSYS29 Interfacing of 32k ram and 16K EPROM with 8085 str f 6264

    HM534251

    Abstract: HM534251-10 HM534251ZP-10 HM534251ZP-12 HM534251ZP HM534251JP-15 HM534251-15 LB203 DC HM534251JP-10 72FL
    Text: H I TA C H I / L O C I C / A R R A Y S / M E M SIE D M M 1 b 5G 3 0 0 n 3 1 5 flfl^ • H I T S HM534251 S e rie s-262,144 x 4-Bit Multiport CMOS Video Random Access Memory ■ DESCRIPTION HM534251JP Series The HM534251 is a 1-Mbit multiport video RAM equipped with a 256k-word x


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    PDF HM534251 MM1b503 256k-word 512-word ns/100 ns/120 ns/150 HM534251-10 HM534251ZP-10 HM534251ZP-12 HM534251ZP HM534251JP-15 HM534251-15 LB203 DC HM534251JP-10 72FL

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED ANALOG A Division of intech ADC5610 SERIES DESCRIPTION HIGH SPEED 12-BIT A /D CONVERTERS The ADC5610 Series devices are successive approximation 12-bit A/D converters with 13/iSec conversion time. These devices are laser trimmed for ultra accuracy and reliability and require no


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    PDF ADC5610 12-BIT 12-bit 13/iSec consumption10Kn MIL-STD-1772

    TC55V4336FF

    Abstract: TC55V4336FF-100
    Text: TO SH IBA TC55V4336FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4336FF is a 4,194,304-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 32 bits. It is designed for use as a secondary cache to support microprocessor


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    PDF TC55V4336FF-100 072-WORD 32-BIT TC55V4336FF 304-bit LQFP100-P-1420-0

    LA 8512

    Abstract: No abstract text available
    Text: y ADC84 ADC85 H IG H -S P E E D , 1 2 -B it MICRO NETWORKS A /D C O N V E R T E R S D E S C R IP TIO N • Fast Conversion Times: 8fisec max. for 12 Bits 5^sec max. for 10 Bits • ± 1/ 2 LSB Linearity and No M issing Codes G uaranteed Over Tem perature • Complete:


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    PDF ADC84 ADC85 32-Pin 12-bit, rang110 LA 8512

    83ADV

    Abstract: No abstract text available
    Text: TO SH IBA TC55V4376FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FFI is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor


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    PDF TC55V4376FFI-83 072-WORD 36-BIT TC55V4376FFI 592-bit I/032, LQFP100-P-1420-0 83ADV